IRFMG50 datasheet, PDF - EEWORLD Datasheet

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IRFMG50: DescriptionPower Field-Effect Transistor, 5.6A I(D), 1000V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, TO-254AA, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size192KB，7 Pages; ManufacturerInfineon; Websitehttp://www.infineon.com/

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IRFMG50 Overview

Power Field-Effect Transistor, 5.6A I(D), 1000V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, TO-254AA, 3 PIN

IRFMG50 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Infineon
package instruction	HERMETIC SEALED, TO-254AA, 3 PIN
Reach Compliance Code	not_compliant
Other features	HIGH RELIABILITY
Avalanche Energy Efficiency Rating (Eas)	860 mJ
Shell connection	ISOLATED
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	1000 V
Maximum drain current (Abs) (ID)	5.6 A
Maximum drain current (ID)	5.6 A
Maximum drain-source on-resistance	2 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-254AA
JESD-30 code	S-XSFM-P3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	UNSPECIFIED
Package shape	SQUARE
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	150 W
Maximum pulsed drain current (IDM)	22 A
Certification status	Not Qualified
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	PIN/PEG
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON

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PD-90711C

POWER MOSFET

THRU-HOLE (TO-254AA)

Product Summary

Part Number

IRFMG50

1000V, N-CHANNEL

HEXFET

MOSFET TECHNOLOGY

DS(on)

2.0Ω

5.6A

HEXFET

MOSFET technology is the key to International

Rectifier’s advanced line of power MOSFET transistors.

The efficient geometry design achieves very low on-state

resistance combined with high transconductance.

HEXFET transistors also feature all of the well-established

advantages of MOSFETs, such as voltage control, very

fast switching, ease of paralleling and electrical parameter

temperature stability. They are well-suited for applications

such as switching power supplies, motor controls,

inverters, choppers, audio amplifiers, high energy pulse

circuits, and virtually any application where high reliability

is required. The HEXFET transistor’s totally isolated

package eliminates the need for additional isolating

material between the device and the heatsink. This

improves thermal efficiency and reduces drain capacitance.

TO-254AA

Features:

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

Electrically Isolated

Ceramic Eyelets

Absolute Maximum Ratings

Parameter

ID @ VGS = 10V, TC = 25°C Continuous Drain Current

ID @ VGS = 10V, TC = 100°C Continuous Drain Current

IDM

Pulsed Drain Current

PD @ TC = 25°C

VGS

EAS

IAR

EAR

dv/dt

T STG

Max. Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction

Storage Temperature Range

Lead Temperature

Weight

For footnotes refer to the last page

300(0.063in./1.6mm from case for 10 sec)

9.3 (Typical)

5.6

3.5

22.4

150

1.2

±20

860

5.6

1.0

-55 to 150

Units

W/°C

V/ns

°C

www.irf.com

06/23/08

IRFMG50 Related Products

	IRFMG50
Description	Power Field-Effect Transistor, 5.6A I(D), 1000V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, TO-254AA, 3 PIN
Is it Rohs certified?	incompatible
Maker	Infineon
package instruction	HERMETIC SEALED, TO-254AA, 3 PIN
Reach Compliance Code	not_compliant
Other features	HIGH RELIABILITY
Avalanche Energy Efficiency Rating (Eas)	860 mJ
Shell connection	ISOLATED
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	1000 V
Maximum drain current (Abs) (ID)	5.6 A
Maximum drain current (ID)	5.6 A
Maximum drain-source on-resistance	2 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-254AA
JESD-30 code	S-XSFM-P3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	UNSPECIFIED
Package shape	SQUARE
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	150 W
Maximum pulsed drain current (IDM)	22 A
Certification status	Not Qualified
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	PIN/PEG
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON

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