Power Field-Effect Transistor, 5.6A I(D), 1000V, 2.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA
| Parameter Name | Attribute value |
| Is it Rohs certified? | incompatible |
| Maker | International Rectifier （ Infineon ） |
| package instruction | FLANGE MOUNT, R-MSFM-P3 |
| Reach Compliance Code | unknown |
| Avalanche Energy Efficiency Rating (Eas) | 860 mJ |
| Shell connection | ISOLATED |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Minimum drain-source breakdown voltage | 1000 V |
| Maximum drain current (Abs) (ID) | 5.6 A |
| Maximum drain current (ID) | 5.6 A |
| Maximum drain-source on-resistance | 2.25 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 code | TO-254AA |
| JESD-30 code | R-MSFM-P3 |
| JESD-609 code | e0 |
| Number of components | 1 |
| Number of terminals | 3 |
| Operating mode | ENHANCEMENT MODE |
| Maximum operating temperature | 150 °C |
| Package body material | METAL |
| Package shape | RECTANGULAR |
| Package form | FLANGE MOUNT |
| Polarity/channel type | N-CHANNEL |
| Maximum power consumption environment | 150 W |
| Maximum power dissipation(Abs) | 150 W |
| Maximum pulsed drain current (IDM) | 22 A |
| Certification status | Not Qualified |
| surface mount | NO |
| Terminal surface | Tin/Lead (Sn/Pb) |
| Terminal form | PIN/PEG |
| Terminal location | SINGLE |
| transistor applications | SWITCHING |
| Transistor component materials | SILICON |
| Maximum off time (toff) | 270 ns |
| Maximum opening time (tons) | 74 ns |
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