TSD2M350V datasheet, PDF - EEWORLD Datasheet

TSD2M350V: DescriptionTRANSISTOR,MOSFET POWER MODULE,INDEPENDENT,400V V(BR)DSS,30A I(D); CategoryDiscrete semiconductor The transistor; File Size223KB，5 Pages; ManufacturerSTMicroelectronics; Websitehttp://www.st.com/

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TSD2M350V Overview

TRANSISTOR,MOSFET POWER MODULE,INDEPENDENT,400V V(BR)DSS,30A I(D)

Parameter Name	Attribute value
Maker	STMicroelectronics
Reach Compliance Code	compliant
Maximum drain current (Abs) (ID)	30 A
FET technology	METAL-OXIDE SEMICONDUCTOR
Number of components	1
Maximum operating temperature	150 °C
Maximum power dissipation(Abs)	300 W

	TSD2M350V	TSD2M350F
Description	TRANSISTOR,MOSFET POWER MODULE,INDEPENDENT,400V V(BR)DSS,30A I(D)	TRANSISTOR,MOSFET POWER MODULE,INDEPENDENT,400V V(BR)DSS,30A I(D)
Maker	STMicroelectronics	STMicroelectronics
Reach Compliance Code	compliant	compliant
Maximum drain current (Abs) (ID)	30 A	30 A
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
Number of components	1	1
Maximum operating temperature	150 °C	150 °C
Maximum power dissipation(Abs)	300 W	300 W

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