Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
| Parameter Name | Attribute value |
| Is it Rohs certified? | incompatible |
| Maker | Vishay |
| package instruction | FLANGE MOUNT, R-PSFM-T3 |
| Reach Compliance Code | unknown |
| Shell connection | DRAIN |
| Configuration | SINGLE |
| Minimum drain-source breakdown voltage | 60 V |
| Maximum drain current (Abs) (ID) | 1.9 A |
| Maximum drain current (ID) | 1.7 A |
| Maximum drain-source on-resistance | 3 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 code | TO-220AB |
| JESD-30 code | R-PSFM-T3 |
| JESD-609 code | e0 |
| Number of components | 1 |
| Number of terminals | 3 |
| Operating mode | ENHANCEMENT MODE |
| Maximum operating temperature | 150 °C |
| Minimum operating temperature | -55 °C |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | FLANGE MOUNT |
| Polarity/channel type | N-CHANNEL |
| Maximum power dissipation(Abs) | 20 W |
| Maximum pulsed drain current (IDM) | 3 A |
| surface mount | NO |
| Terminal surface | Tin/Lead (Sn/Pb) |
| Terminal form | THROUGH-HOLE |
| Terminal location | SINGLE |
| Transistor component materials | SILICON |
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