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EM516

Description
Rectifier Diode, 1 Element, 0.5A, 1800V V(RRM), Silicon, DO-41
CategoryDiscrete semiconductor    diode   
File Size57KB,1 Pages
ManufacturerNew Jersey Semiconductor
Websitehttp://www.njsemi.com
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EM516 Overview

Rectifier Diode, 1 Element, 0.5A, 1800V V(RRM), Silicon, DO-41

EM516 Parametric

Parameter NameAttribute value
MakerNew Jersey Semiconductor
package instructionO-PALF-W2
Reach Compliance Codeunknown
Other featuresHIGH RELIABILITY
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JEDEC-95 codeDO-41
JESD-30 codeO-PALF-W2
Number of components1
Number of terminals2
Maximum operating temperature125 °C
Minimum operating temperature-65 °C
Maximum output current0.5 A
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
Maximum repetitive peak reverse voltage1800 V
surface mountNO
Terminal formWIRE
Terminal locationAXIAL

EM516 Preview

J
CX
, O
ne.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
BY127, BY133
EM513, EM516, EM520
0.25 TO 0.5AMP
SILICON RECTIFIERS
TELEPHONE: (973) 376-2922
(212) 227-6005
FAX: (973) 376-8960
VOLTAGE RANGE
1250 to 2000 Voltts
CURRENT
0.5 Ampere
FEATURES
*
*
*
*
Low forward voltage drop
High current capability
High reliability
High surge current capability
DO-41
T
1.0(25.4)
MIN.
MECHANICAL DATA
* Case: Molded plastic
* Epoxy; UL 94V - 0 rate flame retardant
* Lead: Axial leads, solderable per MIL - STD - 202,
method 206 guaranteed
* Polarity: Color band denotes cathode end
* Mounting Position:Any
•Weight:0.34 grams
1.
166(4.1
T
,034[.9)
'
DIA.
1
Dimensions in inches and( milimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25t ambient temperature unless otherwise specified.
Single phase.half wsve.eo rt/,resistive or Inductive load.
For capacitive load,derate current by 20%
TYPE NUMBER
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum D.C Blocking Voltage
Maximum Average Forward Rectified Current
375"9,5mm) lead length 9 T
A
= 50t
Peak Forward Surge Current, 8. 3 ms single naif sine - wave
superimposed on rated load( JEDEC method)
Maximum Instantaneous Forward Voltage at 1 .OA
Maximum D.C Reverse Current fflT
A
=25<C
At Rated D C Blocking Voltage «T
A
= lOO'C
Typical Junction Capacitance (Note 1)
Typical Thermal Resistance (Note 2)
Operation Temperate Range
Storage Temperature Range
SYMBOLS
VRPM
VHMS
BY127
1250
875
1250
BY133
1400
910
1300
EM513
1600
1120
1600
0.5
25
EM516
1800
1260
1800
EM520
2000
1400
UNITS
V
V
V
A
A
VDC
'P(AV)
2000
IFSM
V
F
IR
Cj
RSJA
1.0
5.0
80.0
8
80
1.1
5.0
100
6
110
V
,iA
tf
pF
t/W
t
t
Tj
TSTG
-65to +125
-66 to +125
NOTE:(1)Meaauredat1 MHz and applied reverse voltage of 4 0 V D C
(2)Thermal resistance from Junction to Ambient 0.375'(9.5mm) Lead Length, P. C.B mooted
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However. N.I Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors

EM516 Related Products

EM516 BY127 BY133 EM513 EM520
Description Rectifier Diode, 1 Element, 0.5A, 1800V V(RRM), Silicon, DO-41 \"Diode Rectifier Diode, 1 Element, 0.5A, 1400V V(RRM), Silicon, DO-41 Diode Switching 1.6KV 1A 2-Pin DO-41 Ammo Rectifier Diode, 1 Element, 0.5A, 2000V V(RRM), Silicon, DO-41
Maker New Jersey Semiconductor New Jersey Semiconductor New Jersey Semiconductor New Jersey Semiconductor New Jersey Semiconductor
Reach Compliance Code unknown unknown unknown unknown unknown
Other features HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY
Shell connection ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE
Diode component materials SILICON SILICON SILICON SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
JEDEC-95 code DO-41 DO-41 DO-41 DO-41 DO-41
JESD-30 code O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2
Number of components 1 1 1 1 1
Number of terminals 2 2 2 2 2
Maximum operating temperature 125 °C 125 °C 125 °C 125 °C 125 °C
Minimum operating temperature -65 °C -65 °C -65 °C -65 °C -65 °C
Maximum output current 0.5 A 0.5 A 0.5 A 0.5 A 0.5 A
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape ROUND ROUND ROUND ROUND ROUND
Package form LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM
Maximum repetitive peak reverse voltage 1800 V 1250 V 1400 V 1600 V 2000 V
surface mount NO NO NO NO NO
Terminal form WIRE WIRE WIRE WIRE WIRE
Terminal location AXIAL AXIAL AXIAL AXIAL AXIAL

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