IDT7M624S55CB datasheet, PDF - EEWORLD Datasheet

IDT7M624S55CB: DescriptionSRAM Module, 256KX4, 55ns, CMOS; Categorystorage storage; File Size192KB，8 Pages; ManufacturerIDT (Integrated Device Technology)

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IDT7M624S55CB Overview

SRAM Module, 256KX4, 55ns, CMOS

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	IDT (Integrated Device Technology)
Reach Compliance Code	not_compliant
ECCN code	3A001.A.2.C
Maximum access time	55 ns
Other features	USER CONFIGURABLE AS 64K X 16
Spare memory width	8
I/O type	COMMON
JESD-30 code	R-XDMA-T40
JESD-609 code	e0
memory density	1048576 bit
Memory IC Type	SRAM MODULE
memory width	4
Number of functions	1
Number of ports	1
Number of terminals	40
word count	262144 words
character code	256000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	125 °C
Minimum operating temperature	-55 °C
organize	256KX4
Output characteristics	3-STATE
Exportable	NO
Package body material	UNSPECIFIED
encapsulated code	DIP
Encapsulate equivalent code	DIP40,.9
Package shape	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	225
power supply	5 V
Certification status	Not Qualified
Filter level	MIL-STD-883 Class B (Modified)
Maximum standby current	0.32 A
Minimum standby current	4.5 V
Maximum slew rate	1.95 mA
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	NO
technology	CMOS
Temperature level	MILITARY
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal pitch	2.54 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	30

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