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CAT28F010TR-90

Description
128KX8 FLASH 12V PROM, 90ns, PDSO32, 8 X 20 MM, REVERSE, TSOP-32
Categorystorage    storage   
File Size116KB,16 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Download Datasheet Parametric View All

CAT28F010TR-90 Overview

128KX8 FLASH 12V PROM, 90ns, PDSO32, 8 X 20 MM, REVERSE, TSOP-32

CAT28F010TR-90 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerON Semiconductor
Parts packaging codeTSOP
package instruction8 X 20 MM, REVERSE, TSOP-32
Contacts32
Reach Compliance Codeunknown
ECCN codeEAR99
Maximum access time90 ns
command user interfaceYES
Data pollingNO
Durability100000 Write/Erase Cycles
JESD-30 codeR-PDSO-G32
length18.4 mm
memory density1048576 bit
Memory IC TypeFLASH
memory width8
Humidity sensitivity level1
Number of functions1
Number of terminals32
word count131072 words
character code128000
Operating modeASYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize128KX8
Package body materialPLASTIC/EPOXY
encapsulated codeTSOP1-R
Encapsulate equivalent codeTSSOP32,.8,20
Package shapeRECTANGULAR
Package formSMALL OUTLINE, THIN PROFILE
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)225
power supply5 V
Programming voltage12 V
Certification statusNot Qualified
reverse pinoutYES
Maximum seat height1.2 mm
Maximum standby current0.0001 A
Maximum slew rate0.03 mA
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)4.5 V
Nominal supply voltage (Vsup)5 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal formGULL WING
Terminal pitch0.5 mm
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
switch bitNO
typeNOR TYPE
width8 mm
CAT28F010
Licensed Intel
1 Megabit CMOS Flash Memory
second source
FEATURES
s
Fast read access time: 90/120 ns
s
Low power CMOS dissipation:
s
Commercial, industrial and automotive
temperature ranges
s
On-chip address and data latches
s
JEDEC standard pinouts:
–Active: 30 mA max (CMOS/TTL levels)
–Standby: 1 mA max (TTL levels)
–Standby: 100
µ
A max (CMOS levels)
s
High speed programming:
–10
µ
s per byte
–2 Sec Typ Chip Program
–32-pin DIP
–32-pin PLCC
–32-pin TSOP (8 x 20)
s
100,000 program/erase cycles
s
10 year data retention
s
Electronic signature
s
0.5 seconds typical chip-erase
s
12.0V
±
5% programming and erase voltage
s
Stop timer for program/erase
DESCRIPTION
The CAT28F010 is a high speed 128K x 8-bit electrically
erasable and reprogrammable Flash memory ideally
suited for applications requiring in-system or after-sale
code updates. Electrical erasure of the full memory
contents is achieved typically within 0.5 second.
It is pin and Read timing compatible with standard
EPROM and EEPROM devices. Programming and
Erase are performed through an operation and verify
algorithm. The instructions are input via the I/O bus,
using a two write cycle scheme. Address and Data are
latched to free the I/O bus and address bus during the
write operation.
The CAT28F010 is manufactured using Catalyst’s
advanced CMOS floating gate technology. It is designed
to endure 100,000 program/erase cycles and has a data
retention of 10 years. The device is available in JEDEC
approved 32-pin plastic DIP, 32-pin PLCC or 32-pin
TSOP packages.
I/O0–I/O7
BLOCK DIAGRAM
I/O BUFFERS
ERASE VOLTAGE
SWITCH
WE
COMMAND
REGISTER
PROGRAM VOLTAGE
SWITCH
CE, OE LOGIC
DATA
LATCH
SENSE
AMP
CE
OE
ADDRESS LATCH
Y-GATING
Y-DECODER
1,048,576 BIT
MEMORY
ARRAY
A0–A16
X-DECODER
VOLTAGE VERIFY
SWITCH
© 2009 SCILLC. All rights reserved.
Characteristics subject to change without notice
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