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BSP299H6327

Description
Power Field-Effect Transistor, 0.4A I(D), 500V, 4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-4
CategoryDiscrete semiconductor    The transistor   
File Size509KB,10 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
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BSP299H6327 Overview

Power Field-Effect Transistor, 0.4A I(D), 500V, 4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-4

BSP299H6327 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerInfineon
package instructionSMALL OUTLINE, R-PDSO-G4
Contacts4
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresAVALANCHE RATED
Avalanche Energy Efficiency Rating (Eas)130 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage500 V
Maximum drain current (Abs) (ID)0.4 A
Maximum drain current (ID)0.4 A
Maximum drain-source on-resistance4 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PDSO-G4
JESD-609 codee3
Number of components1
Number of terminals4
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)1.8 W
Maximum pulsed drain current (IDM)1.6 A
GuidelineAEC-Q101
surface mountYES
Terminal surfaceMatte Tin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsSILICON
BSP299
SIPMOS
®
Small-Signal Transistor
• N channel
• Enhancement mode
• Avalanche rated
V
GS(th)
= 2.1 ... 4.0 V
• Pb-free lead plating; RoHS compliant
Qualified according to AEC Q101
• Halogen­free according to IEC61249­2­21
Pin 1
G
Pin 2
D
Pin 3
S
Pin 4
D
Type
V
DS
I
D
R
DS(on)
Package
Marking
BSP 299
Type
BSP 299
500 V
Pb-free
Yes
0.4 A
4
SOT-223
BSP299
Packaging
Dry
Tape and Reel Information
H6327: 1000 pcs / reel
Maximum Ratings
Parameter
Symbol
Values
Unit
Continuous drain current
T
A
= 25 °C
I
D
A
0.4
DC drain current, pulsed
T
A
= 25 °C
I
Dpuls
1.6
E
AS
Avalanche energy, single pulse
I
D
= 1.2 A,
R
GS
= 25
T
j
= 25 °C
mJ
130
V
GS
P
tot
Gate source voltage
Power dissipation
T
A
= 25 °C
±
20
1.8
V
W
ESD Class
JESD22-A114-HBM
Class 1b
Rev
2.4
1
2012-11­29

BSP299H6327 Related Products

BSP299H6327 BSP299
Description Power Field-Effect Transistor, 0.4A I(D), 500V, 4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-4 SIPMOS Small-Signal Transistor
Is it Rohs certified? conform to conform to
Maker Infineon Infineon
package instruction SMALL OUTLINE, R-PDSO-G4 SMALL OUTLINE, R-PDSO-G4
Contacts 4 4
Reach Compliance Code compliant compli
ECCN code EAR99 EAR99
Other features AVALANCHE RATED AVALANCHE RATED
Avalanche Energy Efficiency Rating (Eas) 130 mJ 130 mJ
Shell connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE
Minimum drain-source breakdown voltage 500 V 500 V
Maximum drain current (Abs) (ID) 0.4 A 0.4 A
Maximum drain current (ID) 0.4 A 0.4 A
Maximum drain-source on-resistance 4 Ω 4 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 code R-PDSO-G4 R-PDSO-G4
Number of components 1 1
Number of terminals 4 4
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED
Polarity/channel type N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) 1.8 W 1.8 W
Maximum pulsed drain current (IDM) 1.6 A 1.6 A
surface mount YES YES
Terminal form GULL WING GULL WING
Terminal location DUAL DUAL
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED
Transistor component materials SILICON SILICON
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