BSR315PH6327 datasheet, PDF - EEWORLD Datasheet

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BSR315PH6327: DescriptionSmall Signal Field-Effect Transistor, 0.62A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, SC-59, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size438KB，9 Pages; ManufacturerInfineon; Websitehttp://www.infineon.com/; Environmental Compliance

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BSR315PH6327 Overview

Small Signal Field-Effect Transistor, 0.62A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, SC-59, 3 PIN

BSR315PH6327 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Infineon
package instruction	GREEN, PLASTIC, SC-59, 3 PIN
Reach Compliance Code	compliant
ECCN code	EAR99
Other features	AVALANCHE RATED
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	60 V
Maximum drain current (ID)	0.62 A
Maximum drain-source on-resistance	0.8 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)	30 pF
JESD-30 code	R-PDSO-G3
JESD-609 code	e3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	P-CHANNEL
Guideline	AEC-Q101
surface mount	YES
Terminal surface	MATTE TIN
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	40
Transistor component materials	SILICON

BSR315PH6327 Preview

BSR315P

SIPMOS

Small-Signal-Transistor

Features

• P-Channel

• Enhancement mode

• Logic level

Product Summary

DS(on),max

-60

0.8

-0.62

• Footprint and pinning compatible with SOT-23 / SuperSOT-23 packages

• Avalanche rated

• Pb-free lead finishing; RoHS compliant

• Qualified according to AEC Q101

• Halogen free according to IEC61249-2-21

SC-59

Type

BSR315P

Package

PG-SC59

Tape and reel information

H6327 = 3000 pcs. / reel

Marking

Halogen-free

Yes

Packing

Non dry

Maximum ratings,

=25 °C, unless otherwise specified

Parameter

Symbol Conditions

Value

steady state

Continuous drain current

=25 °C

=70 °C

Pulsed drain current

Avalanche energy, single pulse

Gate source voltage

Power dissipation

Operating and storage temperature

ESD class

Soldering temperature

IEC climatic category; DIN IEC 68-1

D,pulse

tot

stg

JESD22-C101

=25 °C

=0.62 A,

=25

-0.62

-0.49

-2.48

±20

0.5

-55 ... 150

1A (250V to 500V)

260 °C

55/150/56

°C

Unit

Rev 1.06

page 1

2015-07-24

BSR315P

Parameter

Symbol Conditions

min.

Thermal characteristics

Thermal resistance,

junction - ambient

minimal footprint,

steady state

Values

typ.

max.

Unit

thJA

250

K/W

Electrical characteristics,

=25 °C, unless otherwise specified

Static characteristics

Drain-source breakdown voltage

Gate threshold voltage

(BR)DSS

=0 V,

=-250 µA

GS(th)

=-160 µA

=-60 V,

=0 V,

=25 °C

=-60 V,

=0 V,

=150 °C

Gate-source leakage current

Drain-source on-state resistance

GSS

DS(on)

=-20 V,

=0 V

=-4.5 V,

=-0.49 A

=-10 V,

=-0.62 A

Transconductance

|>2|I

DS(on)max

=-0.49 A

-60

-1

-1.5

-2

Zero gate voltage drain current

DSS

-0.1

-1

µA

-10

870

-100

1300

620

800

0.5

0.9

Rev 1.06

page 2

2015-07-24

BSR315P

Parameter

Symbol Conditions

min.

Dynamic characteristics

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Gate Charge Characteristics

1),2)

Gate to source charge

Gate to drain charge

Gate charge total

Gate plateau voltage

Reverse Diode

Diode continuous forward current

Diode pulse current

Diode forward voltage

Reverse recovery time

Reverse recovery charge

Values

typ.

max.

Unit

iss

oss

rss

d(on)

d(off)

=-30 V,

=-10 V,

=-0.62 A,

G,ext

=0 V,

=-25 V,

=1 MHz

132

176

plateau

=-48 V,

=-0.62 A,

=0 to -

10 V

0.4

-3

0.5

S,pulse

=25 °C

=0 V,

=-0.62 A,

=25 °C

=-30 V,

=|I

/dt =100 A/µs

-0.82

-0.56

-2.5

-1.2

Defined by design. Not subjected to production test

See figure 16 for gate charge parameter definition

Rev 1.06

page 3

2015-07-24

BSR315P

1 Power dissipation

tot

=f(T

)

2 Drain current

=f(T

); |V

|≥10 V

0.7

0.5

0.6

0.4

0.5

tot

[W]

0.4

-I

[A]

0.3

0.2

0.1

120

160

120

160

[°C]

3 Safe operating area

=f(V

);

=25 °C;

parameter:

4 Max. transient thermal impedance

thJA

=f(t

)

parameter:

limited by on-state

resistance

10 µs

0.5

0.2

100 µs

10 ms

1 ms

thJS

[K/W]

0.1

-I

[A]

0.05

0.02

0.01

100 ms

-1

single pulse

-2

0.1

100

-1

-5

-4

-3

-2

-1

-V

[V]

[s]

Rev 1.06

page 4

2015-07-24

BSR315P

5 Typ. output characteristics

=f(V

);

=25 °C

parameter:

-8 V

-10 V

-4.5 V

-6 V

6 Typ. drain-source on resistance

DS(on)

=f(I

);

=25 °C

parameter:

1500

1400

1300

1200

-3 V

-3.5 V

DS(on)

[mW]

1100

-4 V

-I

[A]

-4 V

1000

900

-4.5 V

-5 V

-3.5 V

800

-6 V

700

-8 V

-3 V

600

-2.5 V

-10 V

500

-V

[V]

-I

[A]

7 Typ. transfer characteristics

=f(V

); |V

|>2|I

DS(on)max

parameter:

8 Typ. forward transconductance

=f(I

);

=25 °C

1.5

-I

[A]

[S]

0.5

1.5

2.5

-V

[V]

-I

[A]

Rev 1.06

page 5

2015-07-24

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