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VB40M120C-E3_15

Description
Dual High Voltage Trench MOS Barrier Schottky Rectifier
File Size91KB,4 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Download Datasheet View All

VB40M120C-E3_15 Overview

Dual High Voltage Trench MOS Barrier Schottky Rectifier

VB40M120C-E3
www.vishay.com
Vishay General Semiconductor
Ultra Low V
F
= 0.46 V at I
F
= 5 A
Dual High Voltage Trench MOS Barrier Schottky Rectifier
TMBS
®
TO-263AB
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per
LF maximum peak of 245 °C
2
K
J-STD-020,
1
VB40M120C
PIN 1
PIN 2
K
HEATSINK
• Material categorization: For definitions of compliance
please see
www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in solar cell junction box as a bypass diode for
protection, using DC forward current without reverse bias.
MECHANICAL DATA
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
V
F
at I
F
= 20 A
T
J
max.
Package
Diode variations
2 x 20 A
120 V
250 A
0.64 V
150 °C
TO-263AB
Common cathode
Case:
TO-263AB
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Terminals:
Matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity:
As marked
Mounting Torque:
10 in-lbs maximum
per
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
per device
Maximum average forward rectified current (fig. 1)
per diode
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
Voltage rate of change (rated V
R
)
Operating junction and storage temperature range
I
F(AV)
I
FSM
dV/dt
T
J
, T
STG
SYMBOL
V
RRM
VB40M120C
120
40
20
250
10 000
-40 to +150
V/μs
°C
A
UNIT
V
Revision: 11-Sep-13
Document Number: 89468
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000

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