XPT
TM
650V GenX4
TM
w/ Sonic Diode
Extreme Light Punch Through
IGBT for 10-30kHz Switching
IXXK110N65B4H1
IXXX110N65B4H1
V
CES
=
I
C110
=
V
CE(sat)
t
fi(typ)
=
TO-264 (IXXK)
650V
110A
2.10V
43ns
Symbol
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
LRMS
I
C110
I
F110
I
CM
SSOA
(RBSOA)
t
sc
(SCSOA)
P
C
T
J
T
JM
T
stg
T
L
T
SOLD
M
d
F
C
Weight
Test Conditions
T
J
= 25°C to 175°C
T
J
= 25°C to 175°C, R
GE
= 1M
Continuous
Transient
T
C
= 25°C (Chip Capability)
Terminal Current Limit
T
C
= 110°C
T
C
= 110°C
T
C
= 25°C, 1ms
V
GE
= 15V, T
VJ
= 150°C, R
G
= 2
Clamped Inductive Load
V
GE
= 15V, V
CE
= 360V, T
J
= 150°C
R
G
= 82, Non Repetitive
T
C
= 25°C
Maximum Ratings
650
650
±20
±30
250
160
110
78
570
I
CM
= 220
@V
CE
V
CES
10
880
-55 ... +175
175
-55 ... +175
V
V
V
V
A
A
A
A
A
A
μs
W
°C
°C
°C
°C
°C
Nm/lb.in.
N/lb.
g
g
G
C
E
Tab
PLUS247 (IXXX)
G
G
C
E
Tab
G = Gate
C = Collector
E
= Emitter
Tab = Collector
Features
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
Mounting Torque (TO-264)
Mounting Force
TO-264
PLUS247
(PLUS247)
300
260
1.13/10
20..120 /4.5..27
10
6
Characteristic Values
Min.
Typ.
Max.
650
4.0
6.5
Optimized for 10-30kHz Switching
Square RBSOA
Short Circuit Capability
Anti-Parallel Sonic Diode
High Current Handling Capability
International Standard Packages
Advantages
Symbol
Test Conditions
(T
J
= 25C, Unless Otherwise Specified)
BV
CES
V
GE(th)
I
CES
I
GES
V
CE(sat)
I
C
I
C
= 250A, V
GE
= 0V
= 250A, V
CE
= V
GE
T
J
= 150C
V
CE
= 0V, V
GE
=
20V
I
C
= 110A, V
GE
= 15V, Note 1
T
J
= 150C
High Power Density
Low Gate Drive Requirement
V
V
Applications
V
CE
= V
CES
, V
GE
= 0V
25
A
3 mA
100
1.72
2.05
2.10
nA
V
V
Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
Lamp Ballasts
High Frequency Power Inverters
© 2016 IXYS CORPORATION, All Rights Reserved
DS100502C(8/16 )
IXXK110N65B4H1
IXXX110N65B4H1
Symbol Test Conditions
(T
J
= 25°C Unless Otherwise Specified)
Characteristic Values
Min.
Typ.
Max.
30
52
5500
470
80
183
I
C
= 110A, V
GE
= 15V, V
CE
= 0.5
•
V
CES
32
83
Inductive load, T
J
= 25°C
I
C
= 55A, V
GE
= 15V
V
CE
= 400V, R
G
= 2
Note 2
26
40
2.20
146
43
1.05
25
40
3.00
140
110
2.16
0.15
S
pF
pF
pF
nC
nC
nC
ns
ns
mJ
ns
ns
mJ
ns
ns
mJ
ns
ns
mJ
0.17 °C/W
°C/W
PLUS247
TM
Outline
Reverse Sonic Diode (FRD)
Symbol Test Conditions
(T
J
= 25°C Unless Otherwise Specified)
V
F
I
RM
t
rr
R
thJC
I
F
= 100A, V
GE
= 0V, Note 1
I
F
= 100A, V
GE
= 0V,
-di
F
/dt = 1500A/sV
R
= 300V
T
J
= 150C
T
J
= 150C
Characteristic Values
Min.
Typ.
Max.
1.7
1.8
95
100
2.3
V
V
A
ns
0.38
C/W
PINS:
1 - Gate
2 - Collector
3 - Emitter
PINS:
1 - Gate
2,4 - Collector
3 - Emitter
TO-264 Outline
g
fs
C
ies
C
oes
C
res
Q
g(on)
Q
ge
Q
gc
t
d(on)
t
ri
E
on
t
d(off)
t
fi
E
off
t
d(on)
t
ri
E
on
t
d(off)
t
fi
E
off
R
thJC
R
thCS
I
C
= 60A, V
CE
= 10V, Note 1
V
CE
= 25V, V
GE
= 0V, f = 1MHz
1.70
Inductive load, T
J
= 150°C
I
C
= 55A, V
GE
= 15V
V
CE
= 400V, R
G
= 2
Note 2
Notes:
1. Pulse test, t
300μs, duty cycle, d
2%.
2. Switching times & energy losses may increase for higher V
CE
(Clamp), T
J
or R
G
.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or more of the following U.S. patents: 4,860,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585
7,005,734 B2
6,710,405 B2 6,759,692
7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
7,157,338B2
IXXK110N65B4H1
IXXX110N65B4H1
Fig. 1. Output Characteristics @ T
J
= 25ºC
500
200
V
GE
= 15V
13V
12V
11V
450
400
350
10V
V
GE
= 15V
Fig. 2. Extended Output Characteristics @ T
J
= 25ºC
160
14V
13V
12V
I
C
- Amperes
120
9V
80
8V
40
7V
0
0
0.5
1
1.5
2
2.5
3
3.5
I
C
-
Amperes
300
250
200
150
100
50
0
0
2
4
6
8
10
12
14
16
18
20
22
11V
10V
9V
8V
7V
24
V
CE
- Volts
V
CE
- Volts
Fig. 3. Output Characteristics @ T
J
= 150ºC
2.0
200
V
GE
= 15V
14V
13V
12V
1.8
V
GE
= 15V
Fig. 4. Dependence of V
CE(sat)
on
Junction Temperature
V
CE(sat)
- Normalized
160
11V
1.6
1.4
1.2
1.0
0.8
I
C
= 220A
I
C
- Amperes
120
10V
80
9V
I
C
= 110A
40
8V
7V
I
C
= 55A
0.6
4.5
-50
-25
0
25
50
75
100
125
150
175
0
0
0.5
1
1.5
2
2.5
3
3.5
4
V
CE
- Volts
T
J
- Degrees Centigrade
4.5
Fig. 5. Collector-to-Emitter Voltage vs.
Gate-to-Emitter Voltage
350
T
J
= 25ºC
300
250
Fig. 6. Input Admittance
4.0
3.5
T
J
= - 40ºC
25ºC
T
J
= 150ºC
I
C
-
Amperes
V
CE
- Volts
3.0
2.5
I
C
= 220A
200
150
100
50
2.0
1.5
110A
55A
1.0
8
9
10
11
12
13
14
15
0
4
5
6
7
8
9
10
11
12
13
14
15
V
GE
- Volts
V
GE
- Volts
© 2016 IXYS CORPORATION, All Rights Reserved
IXXK110N65B4H1
IXXX110N65B4H1
Fig. 7. Transconductance
90
80
70
60
50
150ºC
40
30
20
10
0
0
50
100
150
200
250
300
350
25ºC
T
J
= - 40ºC
16
14
12
10
8
6
4
2
0
0
20
40
60
80
100
120
140
160
180
200
V
CE
= 325V
I
C
= 110A
I
G
= 10mA
Fig. 8. Gate Charge
g
f s
-
Siemens
I
C
- Amperes
V
GE
- Volts
Q
G
- NanoCoulombs
Fig. 9. Capacitance
10,000
240
Fig. 10. Reverse-Bias Safe Operating Area
Cies
200
Capacitance - PicoFarads
1,000
160
I
C
- Amperes
Coes
100
Cres
120
80
T
J
= 150ºC
40
R
G
= 2
Ω
dv / dt < 10V / ns
f
= 1 MHz
10
1
0
0
5
10
15
20
25
Fig. 11. Maximum
40
Transient Thermal Impedance
30
35
100
200
300
400
500
600
700
V
CE
- Volts
V
CE
- Volts
Fig. 11. Maximum Transient thermal Impedance (IGBT)
0.3
aaaa
0.1
Z
(th)JC
- K / W
0.01
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXXK110N65B4H1
IXXX110N65B4H1
7
6
Fig. 12. Inductive Switching Energy Loss vs.
Gate Resistance
E
off
V
CE
= 400V
E
on
I
C
= 110A
14
12
6
Fig. 13. Inductive Switching Energy Loss vs.
Collector Current
E
off
V
CE
= 400V
E
on
12
T
J
= 150ºC , V
GE
= 15V
5
10
5
R
G
= 2
Ω
,
V
GE
= 15V
T
J
= 150ºC
10
E
off
- MilliJoules
E
off
- MilliJoules
4
8
E
on
- MilliJoules
E
on
- MilliJoules
4
3
2
I
C
= 55A
8
6
4
3
6
2
T
J
= 25ºC
4
1
0
2
4
6
8
10
2
0
1
2
0
50
55
60
65
70
75
80
85
90
95
100
105
12
14
16
0
110
R
G
- Ohms
I
C
- Amperes
6
Fig. 14. Inductive Switching Energy Loss vs.
Junction Temperature
E
off
E
on
12
180
160
Fig. 15. Inductive Turn-off Switching Times vs.
Gate Resistance
t
fi
V
CE
= 400V
500
450
400
5
R
G
= 2
Ω
,
V
GE
= 15V
V
CE
= 400V
10
140
t
d(off)
T
J
= 150ºC, V
GE
= 15V
t
d(off)
- Nanoseconds
I
C
= 110A
3
6
t
f i
- Nanoseconds
4
8
120
100
80
60
40
I
C
= 55A
I
C
= 110A
350
300
250
200
150
100
50
2
3
4
5
6
7
8
9
10
11
12
13
14
15
E
on
- MilliJoules
E
off
- MilliJoules
2
4
1
I
C
= 55A
2
20
0
150
0
0
25
50
75
100
125
T
J
- Degrees Centigrade
R
G
- Ohms
140
Fig. 16. Inductive Turn-off Switching Times vs.
Collector Current
t
fi
t
d(off)
220
160
140
Fig. 17. Inductive Turn-off Switching Times vs.
Junction Temperature
t
fi
V
CE
= 400V
240
220
200
t
d(off)
120
R
G
= 2
Ω
, V
GE
= 15V
V
CE
= 400V
200
120
R
G
= 2
Ω
, V
GE
= 15V
t
d(off)
- Nanoseconds
t
d(off)
- Nanoseconds
t
f i
- Nanoseconds
100
180
t
f i
- Nanoseconds
100
80
60
40
20
0
25
50
75
100
125
180
160
140
120
100
80
150
80
T
J
= 150ºC
160
I
C
= 55A, 110A
60
T
J
= 25ºC
40
140
120
20
50
55
60
65
70
75
80
85
90
95
100
105
100
110
I
C
- Amperes
T
J
- Degrees Centigrade
© 2016 IXYS CORPORATION, All Rights Reserved
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