BTS247Z datasheet, PDF - EEWORLD Datasheet

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BTS247Z: Description33A, 55V, 0.028ohm, N-CHANNEL, Si, POWER, MOSFET, GREEN, PLASTIC, TO-220, 5 PIN; CategoryDiscrete semiconductor The transistor; File Size990KB，15 Pages; ManufacturerRochester Electronics; Websitehttps://www.rocelec.com/; Environmental Compliance

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BTS247Z Overview

33A, 55V, 0.028ohm, N-CHANNEL, Si, POWER, MOSFET, GREEN, PLASTIC, TO-220, 5 PIN

BTS247Z Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	conform to
Maker	Rochester Electronics
Parts packaging code	TO-220
package instruction	GREEN, PLASTIC, TO-220, 5 PIN
Contacts	5
Reach Compliance Code	unknown
Other features	AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Avalanche Energy Efficiency Rating (Eas)	1300 mJ
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	55 V
Maximum drain current (ID)	33 A
Maximum drain-source on-resistance	0.028 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PSFM-T5
Humidity sensitivity level	NOT SPECIFIED
Number of components	1
Number of terminals	5
Operating mode	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum pulsed drain current (IDM)	180 A
Certification status	COMMERCIAL
surface mount	NO
Terminal surface	NOT SPECIFIED
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON

BTS247Z Preview

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Speed TEMPFET

BTS247Z

Speed TEMPFET®

N-Channel

Enhancement mode

Logic Level Input

Analog driving possible

Fast switching up to 1 MHz

Potential-free temperature sensor with

thyristor characteristics

Overtemperature protection

Avalanche rated

•

Green Product (RoHS Compliant)

PG-TO220-5-62

PG-TO220-5-3

•

AEC Qualified

DS(on)

Package

PG-TO220-5-3

PG-TO220-5-62

Ordering Code

On Request

PG-TO220-5-43

Type

BTS 247 Z

Pin 1

Pin 2

Pin 4

Pin 5

Symbol

Data Sheet

55 V

18 m

PG-TO-220-5-43 On Request

Pin 3 and TAB

Temperature

Sensor

Function

Gate

Anode Temperature Sensor

Drain

Cathode Temperature Sensor

Source

Rev.1.3, 2009-12-04

Speed TEMPFET

BTS247Z

Maximum Ratings

Parameter

Drain source voltage

Gate source voltage

Drain-gate voltage,

= 20

Symbol

Value

Unit

Nominal load current (ISO 10483)

= 10 V,

D(ISO)

Continuous drain current

= 100 °C,

= 4.5V

Pulsed drain current

Avalanche energy, single pulse

Power dissipation

= 25 °C

Operating temperature

Peak temperature ( single event )

Storage temperature

DIN humidity category, DIN 40 040

IEC climatic category; DIN IEC 68-1

1current limited by bond wire

2Note: Thermal trip temperature of temperature sensor is below 175°C

Data Sheet

Rev.1.3, 2009-12-04

= 12 A,

= 25

= 4.5 V,

0.5 V,

= 85 °C

D puls

tot

jpeak

stg

0.5 V,

= 85 °C

-40 ...+175

200

-55 ... +150

40/150/56

DGR

180

1.3

120

°C

Speed TEMPFET

BTS247Z

Thermal Characteristics

Parameter

Characteristics

junction - case:

Thermal resistance @ min. footprint

Thermal resistance @ 6 cm

cooling area

Electrical Characteristics

Parameter

= 25°C, unless otherwise specified

Static Characteristics

Drain-source breakdown voltage

= 0 V,

= 0.25 mA

Gate threshold voltage,

= 90 μA

= 250 μA

Zero gate voltage drain current

= 50 V,

= 0 V,

= -40 °C

= 50 V,

= 0 V,

= 25 °C

= 50 V,

= 0 V,

= 150 °C

Gate-source leakage current

= 20 V,

= 0 V,

= 25 °C

= 20 V,

= 0 V,

= 150 °C

Drain-Source on-state resistance

= 4.5 V,

= 12 A

= 10 V,

= 12 A

DS(on)

GSS

100

DSS

0.1

100

GS(th)

1.2

1.6

1.65

μA

(BR)DSS

Symbol

min.

Values

typ.

max.

Unit

Symbol

min.

thJC

th(JA)

Values

typ.

max.

1.25

Unit

K/W

1 Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70μm thick) copper area for drain

connection. PCB mounted vertical without blown air.

Data Sheet

Rev.1.3, 2009-12-04

Speed TEMPFET

BTS247Z

Electrical Characteristics

Parameter

= 25°C, unless otherwise specified

Dynamic Characteristics

Forward transconductance

>2*I

DS(on)max

= 33 A

Input capacitance

= 0 V,

= 25 V,

= 1 MHz

Output capacitance

= 0 V,

= 25 V,

= 1 MHz

Reverse transfer capacitance

= 0 V,

= 25 V,

= 1 MHz

Turn-on delay time

= 30 V,

= 4.5 V,

= 45 A,

Rise time

= 3.6

d(on)

rss

230

290

oss

410

515

iss

1380

1730

Symbol

min.

Values

typ.

max.

Unit

= 30 V,

= 4.5 V,

= 45 A,

Turn-off delay time

= 30 V,

= 4.5 V,

= 45 A,

Fall time

= 3.6

= 30 V,

= 4.5 V,

= 45 A,

Gate Charge Characteristics

Gate charge at threshold

= 40 V,

= 0.1 A,

= 0 to 1 V

Gate charge at 5.0 V

= 40 V,

= 45 A,

= 0 to 5 V

Gate charge total

= 40 V,

= 45 A,

= 0 to 10 V

Gate plateau voltage

= 40 V,

= 45 A

Data Sheet

Rev.1.3, 2009-12-04

= 3.6

d(off)

g(th)

g(5)

g(total)

(plateau)

4.5

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