datasheet
EEWORLDEEWORLDEEWORLD
Datasheet
Part Number

Keyword

Search
Keyword

Part Number

Search
Datasheet> All Categories > Discrete semiconductor> The transistor> IXGR24N120C3D1
PDF
Preview

IXGR24N120C3D1

Description
Insulated Gate Bipolar Transistor,
CategoryDiscrete semiconductor    The transistor   
File Size163KB，8 Pages
ManufacturerLittelfuse
Websitehttp://www.littelfuse.com
Download Datasheet Parametric View All

IXGR24N120C3D1 Online Shopping

Suppliers Part Number Price MOQ In stock  
IXGR24N120C3D1 - - View Buy Now

IXGR24N120C3D1 Overview

Insulated Gate Bipolar Transistor,

IXGR24N120C3D1 Parametric

Parameter NameAttribute value
MakerLittelfuse
package instruction,
Reach Compliance Codeunknown

IXGR24N120C3D1 Preview

Preliminary Technical Information
GenX3
TM
1200V IGBT
High speed PT IGBTs for
20-50kHz Switching
IXGR24N120C3D1
V
CES
=
I
C25
=
V
CE(sat)
≤
t
fi(typ)
=
1200V
48A
4.2V
110ns
Symbol
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C100
I
CM
I
A
E
AS
SSOA
(RBSOA)
P
C
T
J
T
JM
T
stg
F
C
T
L
T
SOLD
V
ISOL
Weight
Test Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C, R
GE
= 1MΩ
Continuous
Transient
T
C
= 25°C
T
C
= 100°C
T
C
= 25°C, 1ms
T
C
= 25°C
T
C
= 25°C
V
GE
= 15V, T
J
= 125°C, R
G
= 5Ω
Clamped inductive load @V
CE
≤
1200V
T
C
= 25°C
Maximum Ratings
1200
1200
±20
±30
48
24
96
20
250
I
CM
= 48
200
-55 ... +150
150
-55 ... +150
V
V
V
V
A
A
A
A
mJ
A
W
°C
°C
°C
N/lb.
°C
°C
V
V
g
ISOPLUS 247
TM
(IXGR)
G
C
E
ISOLATED TAB
G = Gate
E = Emitter
C = Collector
TAB = Collector
Mounting force
Maximum lead temperature for soldering
1.6mm (0.062 in.) from case for 10s
50/60 Hz RMS, t = 1min
I
ISOL
< 1mA,
t = 20seconds
20..120/4.5..27
300
260
2500
3000
5
Features
•
DCB Isolated mounting tab
•
Meets TO-247AD package outline
•
High current handling capability
•
Latest generation HDMOS
TM
process
•
MOS Gate turn-on
-drive simplicity
•
Avalanche Rated
Applications
•
Switch-mode and resonant-mode
power supplies
•
Uninterruptible power supplies (UPS)
•
DC choppers
•
AC motor speed control
•
DC servo and robot drives
Symbol
Test Conditions
(T
J
= 25°C, unless otherwise specified)
BV
CES
V
GE(th)
I
CES
I
GES
V
CE(sat)
I
C
I
C
= 250μA, V
GE
= 0V
= 250μA, V
CE
= V
GE
T
J
= 125°C
Characteristic Values
Min.
Typ.
Max.
1200
2.5
5.0
100
1.5
±100
T
J
= 125°C
3.6
3.1
4.2
V
V
μA
mA
nA
V
V
V
CE
= V
CES
V
GE
= 0V
V
CE
= 0V, V
GE
=
±20V
I
C
= 20A, V
GE
= 15V, Note 2
Advantages
•
Space savings
•
Easy assembly
•
High power density
•
Very fast switching speeds for high
frequency applications
© 2008 IXYS CORPORATION, All rights reserved
DS99946(02/08)
IXGR24N120C3D1
Symbol
Test Conditions
(T
J
= 25°C, unless otherwise specified)
g
fs
C
ies
C
oes
C
res
Q
g
Q
ge
Q
gc
t
d(on)
t
ri
E
on
t
d(off)
t
fi
E
off
t
d(on)
t
ri
E
on
t
d(off)
t
fi
E
off
R
thJC
R
thCK
Inductive load, T
J
= 125°C
°
I
C
= 20A, V
GE
= 15V
V
CE
= 600V, R
G
= 5Ω
Note 1
Inductive load, T
J
= 25°C
°
I
C
= 20A, V
GE
= 15V
V
CE
= 600V, R
G
= 5Ω
Note 1
I
C
= 24A, V
GE
= 15V, V
CE
= 0.5
•
V
CES
I
C
= 24A, V
CE
= 10V, Note 2
V
CE
= 25V, V
GE
= 0V, f = 1MHz
Characteristic Values
Min.
Typ.
Max.
10
17
1620
179
52
79
12
36
16
26
1.37
93
110
0.47
17
37
2.90
125
305
1.18
0.85
S
pF
pF
pF
nC
nC
nC
ns
ns
mJ
ns
ns
mJ
ns
ns
mJ
ns
ns
mJ
ISOPLUS247 (IXGR) Outline
2.00
0.15
1.00
°C/W
°C/W
Reverse Diode (FRED)
Symbol
Test Conditions
(T
J
= 25°C, unless otherwise specified)
V
F
I
RM
t
rr
R
thJC
Notes:
1.
2.
Switching times may increase for V
CE
(Clamp) > 0.8 • V
CES
,
higher T
J
or increased R
G
.
Pulse test, t
≤
300μs; duty cycle, d
≤
2%.
I
F
= 30A, V
GE
= 0V
I
F
= 30A, V
GE
= 0V
Characteristic Values
Min. Typ.
Max.
T
J
= 125°C
5.5
220
2.75
1.80
11
V
V
A
ns
I
F
= 50A, -di
F
/dt = 100A/μs, V
R
= 600V
V
GE
= 0V, T
J
= 100°C
1.5
°C/W
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or more of the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585
7,005,734 B2
6,710,405 B2 6,759,692
7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
7,157,338B2
IXGR24N120C3D1
Fig. 1. Output Characteristics
@ 25ºC
50
45
40
35
30
25
20
15
10
5
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
5V
0
0
2
4
6
8
10
12
14
16
18
20
22
24
26
7V
V
GE
= 15V
13V
11V
180
V
GE
= 15V
160
140
13V
Fig. 2. Extended Output Characteristics
@ 25ºC
I
C
-
Amperes
I
C
- Amperes
9V
120
100
80
60
40
20
7V
9V
11V
V
CE
- Volts
V
CE
- Volts
Fig. 3. Output Characteristics
@ 125ºC
50
45
40
35
V
GE
= 15V
13V
11V
1.4
1.3
Fig. 4. Dependence of V
CE(sat)
on
Junction Temperature
V
GE
= 15V
I
9V
C
= 48A
V
CE(sat)
- Normalized
1.2
1.1
1.0
0.9
0.8
I
C
I
C
- Amperes
30
25
20
15
10
5
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
5V
7V
= 24A
0.7
0.6
-50
-25
0
25
50
I
C
= 12A
75
100
125
150
V
CE
- Volts
T
J
- Degrees Centigrade
Fig. 5. Collector-to-Emitter Voltage
vs. Gate-to-Emitter Voltage
8.0
7.5
7.0
6.5
I
= 48A
24A
12A
T
J
= 25ºC
60
55
50
C
Fig. 6. Input Admittance
45
T
J
= - 40ºC
25ºC
125ºC
6.0
5.5
5.0
4.5
I
C
-
Amperes
40
35
30
25
20
15
V
CE
- Volts
4.0
3.5
3.0
5
6
7
8
9
10
11
12
13
14
15
10
5
0
4.0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
8.0
8.5
9.0
V
GE
- Volts
V
GE
- Volts
© 2008 IXYS CORPORATION, All rights reserved
IXGR24N120C3D1
Fig. 7. Transconductance
26
24
22
20
T
J
= - 40ºC
16
14
12
25ºC
125ºC
V
CE
= 600V
I
C
= 24A
I
G
= 10mA
Fig. 8. Gate Charge
g
f s
-
Siemens
18
16
14
12
10
8
6
4
2
0
0
10
20
30
40
50
60
V
GE
- Volts
70
80
10
8
6
4
2
0
0
10
20
30
40
50
60
70
80
I
C
- Amperes
Q
G
- NanoCoulombs
Fig. 9. Capacitance
10,000
55
Fig. 10. Reverse-Bias Safe Operating Area
50
45
f
= 1 MHz
Capacitance - PicoFarads
40
I
C
- Amperes
1,000
Cies
35
30
25
20
Coes
100
15
10
Cres
10
0
5
10
15
20
25
30
35
40
5
0
200
T
J
= 125ºC
R
G
= 5
Ω
dV / dt < 10V / ns
400
600
800
1000
1200
1400
V
CE
- Volts
V
CE
- Volts
Fig. 11. Maximum Transient Thermal Impedance
10.00
Z
(th)JC
- ºC / W
1.00
0.10
0.01
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS REF: G_24N120C3D1(4N)02-19-08
IXGR24N120C3D1
Fig. 12. Inductive Switching
Energy Loss vs. Gate Resistance
1.5
1.4
1.3
1.2
3.4
3.2
3.0
1.8
1.6
1.4
E
off
V
CE
= 600V
E
on
Fig. 13. Inductive Switching
Energy Loss vs. Collector Current
3.6
----
3.2
2.8
R
G
= 5
Ω
,
V
GE
= 15V
E
off
- MilliJoules
E
off
- MilliJoules
I
E
off
V
CE
= 600V
E
on
-
C
= 20A
2.8
2.6
2.4
2.2
2.0
1.8
1.6
1.2
1.0
0.8
0.6
0.4
0.2
0.0
10
E
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
4
2.4
T
J
= 125ºC
2.0
1.6
1.2
0.8
T
J
= 25ºC
11
12
13
14
15
16
17
18
19
20
0.4
0.0
E
on
on
---
- MilliJoules
- MilliJoules
T
J
= 125ºC , V
GE
= 15V
I
C
= 10A
1.4
1.2
6
8
10
12
14
16
18
20
R
G
- Ohms
I
C
- Amperes
Fig. 14. Inductive Switching
Energy Loss vs. Junction Temperature
1.4
1.2
1.0
0.8
0.6
0.4
I
C
= 10A
0.2
0.0
25
35
45
55
65
75
85
95
105
115
0.6
0.0
125
E
off
V
CE
= 600V
I
C
= 20A
2.4
1.8
1.2
E
on
4.2
360
340
320
Fig. 15. Inductive Turn-off
Switching Times vs. Gate Resistance
400
----
R
G
= 5
Ω
,
V
GE
= 15V
3.6
3.0
t
f
V
CE
= 600V
t
d(off
)
- - - -
360
320
280
T
J
= 125ºC, V
GE
= 15V
t
d(off)
- Nanoseconds
E
off
- MilliJoules
t
f
- Nanoseconds
E
- MilliJoules
300
280
260
I
240
220
200
4
6
8
10
12
14
16
18
20
C
on
I
C
= 20A
240
200
= 10A
160
120
80
T
J
- Degrees Centigrade
R
G
- Ohms
Fig. 16. Inductive Turn-off
Switching Times vs. Collector Current
380
340
300
130
125
300
120
350
Fig. 17. Inductive Turn-off
Switching Times vs. Junction Temperature
140
t
f
V
CE
= 600V
t
d(off)
- - - -
130
R
G
= 5
Ω
, V
GE
= 15V
t
t
d(off)
- Nanoseconds
t
f
- Nanoseconds
260
220
180
140
100
60
20
10
11
12
13
14
15
16
17
18
19
20
T
J
= 25ºC
115
t
f
- Nanoseconds
T
J
= 125ºC
d(off)
250
I
200
C
120
= 20A
110
- Nanoseconds
t
f
V
CE
= 600V
t
d(off
)
- - - -
110
105
100
95
R
G
= 5
Ω
, V
GE
= 15V
150
I
C
= 10A
100
100
90
85
50
25
35
45
55
65
75
85
95
105
115
90
80
125
I
C
- Amperes
T
J
- Degrees Centigrade
© 2008 IXYS CORPORATION, All rights reserved
More (Only the first 5 pages are displayed. Please Download Datasheet to view the full content.) >

Recommended Resources

Positive peak detector circuit diagram D

TTL to CMOS interface circuit

Aide brand RZL40-15GW2 electric water heater circuit diagram

High current switching power supply starting circuit

Soil moisture upper and lower limit alarm

Current-Voltage Conversion Circuit

Consider self-resonant frequency when selecting components
[size=4] When designing a simple DCDC circuit, after preliminary calculation, you can start selecting the inductor based on the parameters of the inductor DC resistance (DCR), capacitor rated ripple c...
qwqwqw2088 Analogue and Mixed Signal
Let me ask you all: What type of infiltration does the subway and bus card system belong to?
I hope everyone can give me a sincere answer. Thank you very much....
zhqx0502 Embedded System
MSP430
MSP430 Free Information...
扫把鑫 Microcontroller MCU
Refresh the dialog interface?
I create multiple buttons in my dialog box, and all the buttons are redrawn. When I return to the dialog box from other interfaces, these buttons are displayed one by one each time, which is very slow...
xibeifengse Embedded System
The servo circuit controls the amplitude of the sine wave
The figure is a schematic diagram of the servo system with oscillator amplitude control. This circuit forms a closed loop system that provides an AC signal with a fixed and adjustable peak-to-peak amp...
fighting Analog electronics
Ask about 28035 AD sequential sampling
[i=s] This post was last edited by yukang1744 on 2015-1-25 23:31 [/i] 28035, the sample code of the development board uses synchronous sampling. I changed it to sequential sampling, but it did not ent...
yukang1744 Microcontroller MCU
Shortcut:   L0 L1 L2 L3 L4 L5 L6 L7 L8 L9 LA LB LC LD LE LF LG LH LI LJ LK LL LM LN LO LP LQ LR LS LT LU LV LW LX LY LZ M0 M1 M2 M3 M4 M5 M6 M7 M8 M9 MA MB MC MD ME MF MG MH MI MJ MK ML MM MN MO MP MQ MR MS MT MU MV MW MX MY MZ N0 N1 N2 N3 N4 N5 N6 N7 N8 NA NB NC ND NE NF NG NH NI NJ NK NL NM NN NO NP NQ NR NS NT NU NV NX NZ O0 O1 O2 O3 OA OB OC OD OE OF OG OH OI OJ OK OL OM ON OP OQ OR OS OT OV OX OY OZ P0 P1 P2 P3 P4 P5 P6 P7 P8 P9 PA PB PC PD PE PF PG PH PI PJ PK PL PM PN PO PP PQ PR PS PT PU PV PW PX PY PZ Q1 Q2 Q3 Q4 Q5 Q6 Q8 Q9 QA QB QC QE QF QG QH QK QL QM QP QR QS QT QV QW QX QY R0 R1 R2 R3 R4 R5 R6 R7 R8 R9 RA RB RC RD RE RF RG RH RI RJ RK RL RM RN RO RP RQ RR RS RT RU RV RW RX RY RZ

Popular Components

  1. SB63M1R00BZS7511
  2. 1200FGF150JA24B
  3. ASM63832UR17TD7F-T
  4. 0041.9119.8.2.2.045
  5. DT22J3RS215DQF8
  6. M80-4000000F1-10-302-02-322
  7. M55342K12G220JP
  8. RCMT04W202KC
  9. 2SB1260R
  10. 1N5237C-35T/R
  11. C6351HMTP-3P
  12. A2543WVA-4P-WH-C66D45-G

Popular Articles

  1. Renesas Electronics Launches 32-bit RX671 MCU for High Performance and High Energy Efficiency
  2. Mobileye's first mass-produced Robotaxi: Based on the NIO ES8, equipped with Chinese-made LiDAR
  3. Renesas Electronics Launches New RA4 Entry-Level Product Group with Balanced Low Power Performance
  4. Ferrari's new patent: new smart helmet
  5. 51 single chip microcomputer 8x8LED dot matrix screen cyclically displays numbers 0~9
  6. TSMC customer list: Apple is the absolute main source of revenue
  7. iPhone SE 3 may soon enter trial production
  8. Intel Celeron G6900 dual-core processor benchmark revealed: single-core performance on par with i9-10900K
  9. Xiaomi Mi 12 series imaging system decrypted: rewrite the entire camera architecture, heterogeneous/parallel operation
  10. 51 single chip microcomputer C51 program

Technical ResourceMore

  1. Infrared camera solution based on LPC2138
  2. Real-time display of multiple LED screens based on RS485
  3. Embedded Software Testing e-Tutorial
  4. Smart ways to maintain your vehicle
  5. LRC precise synchronization based on frame information timing
  6. Introduction to resistance temperature sensor (PPT)
  7. The Implementation of Chinese Character Input Method Based on ROM Single Chip Microcomputer
  8. CD4017 controls the running light in practice
  9. Automatic cradle based on acceleration sensor and MC9S08QG8
  10. The Development and Application of Artificial Neural Networks

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

About Us Customer Service Contact Information Datasheet Sitemap LatestNews
Index Files: 1592  285  1999  826  2285  33  6  41  17  47 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号