BSD214SN
OptiMOS
™
2 Small-Signal-Transistor
Features
• N-channel
• Enhancement mode
• Super Logic level (2.5V rated)
• Avalanche rated
• Qualified according to AEC Q101
• 100% lead-free; RoHS compliant
• Halogen-free according to IEC61249-2-21
Product Summary
V
DS
R
DS(on),max
V
GS
=4.5 V
V
GS
=2.5 V
I
D
20
140
250
1.5
A
V
mW
PG-SOT363
6
5
4
1
2
3
Type
BSD214SN
Package
PG-SOT-
Tape and Reel Information
H6327: 3000 pcs/ reel
Marking
X5s
Lead Free
Yes
Packing
Non dry
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Parameter
Continuous drain current
Symbol Conditions
I
D
T
A
=25 °C
T
A
=70 °C
Pulsed drain current
Avalanche energy, single pulse
I
D,pulse
E
AS
T
A
=25 °C
I
D
=1.5 A,
R
GS
=25
W
Value
1.5
1.2
6
3.7
mJ
Unit
A
Reverse diode dv /dt
dv /dt
I
D
=1.5 A,
V
DS
=16 V,
di /dt =200 A/µs,
T
j,max
=150 °C
6
kV/µs
Gate source voltage
Power dissipation
1)
Operating and storage temperature
ESD Class
Soldering Temperature
IEC climatic category; DIN IEC 68-1
V
GS
P
tot
T
j
,
T
stg
JESD22-A114 -HBM
T
A
=25 °C
±12
0.5
-55 ... 150
0 (<250V)
260 °C
55/150/56
V
W
°C
Rev 2.4
page 1
2013-04-10
BSD214SN
Parameter
Symbol Conditions
min.
Thermal characteristics
Thermal resistance,
junction - ambient
Values
typ.
max.
Unit
R
thJA
minimal footprint
1)
-
-
250
K/W
Electrical characteristics,
at
T
j
=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Drain-source leakage current
V
(BR)DSS
V
GS
= 0 V,
I
D
= 250 µA
V
GS(th)
I
DSS
V
DS
=V
GS
,
I
D
=3.7 µA
V
DS
=20 V,
V
GS
=0 V,
T
j
=25 °C
V
DS
=20 V,
V
GS
=0 V,
T
j
=150 °C
20
0.7
-
-
0.95
-
-
1.2
1
V
mA
-
-
-
-
-
-
176
111
4
100
100
250
140
-
S
nA
mW
Gate-source leakage current
Drain-source on-state resistance
I
GSS
R
DS(on)
V
GS
=12 V,
V
DS
=0 V
V
GS
=2.5 V,
I
D
=0.7 A
V
GS
=4.5 V,
I
D
=1.5 A
Transconductance
g
fs
|V
DS
|>2|I
D
|R
DS(on)max
,
I
D
=1.2 A
Performed on 40mm
2
FR4 PCB. The traces are 1mm wide 70μm thick and 20mm long; they are present on both
sides of the PCB.
1)
Rev 2.4
page 2
2013-04-10
BSD214SN
Parameter
Symbol Conditions
min.
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Reverse Diode
Diode continous forward current
Diode pulse current
Diode forward voltage
Reverse recovery time
Reverse recovery charge
I
S
I
S,pulse
V
SD
t
rr
Q
rr
V
GS
=0 V,
I
F
=1.5 A,
T
j
=25 °C
V
R
=10 V,
I
F
=1.5 A,
di
F
/dt =100 A/µs
-
T
A
=25 °C
-
-
-
-
-
0.8
8.4
1.7
6
1.1
-
-
V
ns
nC
-
0.5
A
Q
gs
Q
gd
Q
g
V
plateau
V
DD
=10 V,
I
D
=1.5 A,
V
GS
=0 to 5 V
-
-
-
-
0.24
0.2
0.8
2.2
-
-
-
-
V
nC
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
DD
=10 V,
V
GS
=4.5 V,
I
D
=1.5 A,
R
G,ext
=6
W
V
GS
=0 V,
V
DS
=10 V,
f
=1 MHz
-
-
-
-
-
-
-
107
46
6
4.1
7.8
6.8
1.4
143
62
9
-
-
-
-
ns
pF
Values
typ.
max.
Unit
Rev 2.4
page 3
2013-04-10
BSD214SN
1 Power dissipation
P
tot
=f(T
A
)
2 Drain current
I
D
=f(T
A
);
V
GS
≥4.5 V
0.5
1.5
0.375
P
tot
[W]
1
0.25
I
D
[A]
0.5
0.125
0
0
40
80
120
0
0
20
40
60
80
100
120
140
T
A
[°C]
T
A
[°C]
3 Safe operating area
I
D
=f(V
DS
);
T
A
=25 °C;
D
=0
parameter:
t
p
10
1
1 µs
10 µs
100 µs
1 ms
4 Max. transient thermal impedance
Z
thJA
=f(t
p
)
parameter:
D
=t
p
/T
10
0
10 ms
10
2
0.5
0.2
0.1
0.05
Z
thJA
[K/W]
I
D
[A]
10
-1
DC
10
1
0.02
0.01
single pulse
10
-2
10
0
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
-1
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
V
DS
[V]
t
p
[s]
Rev 2.4
page 4
2013-04-10
BSD214SN
5 Typ. output characteristics
I
D
=f(V
DS
);
T
j
=25 °C
parameter:
V
GS
8
3.5 V
6 Typ. drain-source on resistance
R
DS(on)
=f(I
D
);
T
j
=25 °C
parameter:
V
GS
280
2.2 V
240
6
4.5 V
3V
2.5 V
200
R
DS(on)
[mW]
160
3.5 V
3V
I
D
[A]
4
120
4.5 V
6V
2.5 V
80
2
2.3 V
40
2V
1.8 V
0
0
1
2
3
0
0
1
2
3
4
5
V
DS
[V]
I
D
[A]
7 Typ. transfer characteristics
I
D
=f(V
GS
); |V
DS
|>2|I
D
|R
DS(on)max
8 Typ. forward transconductance
g
fs
=f(I
D
);
T
j
=25 °C
1.5
8
6
1
g
fs
[S]
3
I
D
[A]
4
25 °C
0.5
150 °C
2
0
0
1
2
0
0
2
4
6
V
GS
[V]
I
D
[A]
Rev 2.4
page 5
2013-04-10
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