BSD235NH6327 datasheet, PDF - EEWORLD Datasheet

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BSD235NH6327: DescriptionSmall Signal Field-Effect Transistor, 0.95A I(D), 20V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-6; CategoryDiscrete semiconductor The transistor; File Size345KB，9 Pages; ManufacturerInfineon; Websitehttp://www.infineon.com/; Environmental Compliance

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BSD235NH6327 Overview

Small Signal Field-Effect Transistor, 0.95A I(D), 20V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-6

BSD235NH6327 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Infineon
package instruction	GREEN, PLASTIC PACKAGE-6
Reach Compliance Code	compliant
ECCN code	EAR99
Other features	AVALANCHE RATED
Configuration	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	20 V
Maximum drain current (ID)	0.95 A
Maximum drain-source on-resistance	0.35 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PDSO-G6
Number of components	2
Number of terminals	6
Operating mode	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	N-CHANNEL
Guideline	AEC-Q101
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
Transistor component materials	SILICON

BSD235NH6327 Preview

BSD235N

OptiMOS

™

2 Small-Signal-Transistor

Features

• Dual N-channel

• Enhancement mode

• Super Logic level (2.5V rated)

• Avalanche rated

• Qualified according to AEC Q101

Product Summary

DS(on),max

=4.5 V

=2.5 V

350

600

0.95

PG-SOT-363

• 100% lead-free; RoHS compliant

• Halogen-free according to IEC61249-2-21

Type

BSD235N

Package

Tape and Reel Information

Marking

X6s

Lead Free

Yes

Packing

Non dry

PG-SOT-363 H6327: 3000 pcs/ reel

Maximum ratings,

=25 °C, unless otherwise specified

Parameter

Continuous drain current

Symbol Conditions

=25 °C

=70 °C

Pulsed drain current

Avalanche energy, single pulse

D,pulse

=25 °C

=0.95 A,

=16

Value

0.95

0.76

3.8

1.6

Unit

Reverse diode dv /dt

dv /dt

=0.95 A,

=16 V,

di /dt =200 A/µs,

j,max

=150 °C

kV/µs

Gate source voltage

Power dissipation

Operating and storage temperature

ESD Class

Soldering Temperature

IEC climatic category; DIN IEC 68-1

(1)

tot

stg

JESD22-A114 -HBM

=25 °C

±12

0.5

-55 ... 150

0 (<250V)

260 °C

55/150/56

°C

Remark: only one of both transistors in operation.

Rev 2.4

page 1

2013-04-15

BSD235N

Parameter

Symbol Conditions

min.

Thermal characteristics

Thermal resistance,

junction - ambient

Values

typ.

max.

Unit

thJA

minimal footprint

(2)

250

K/W

Electrical characteristics,

=25 °C, unless otherwise specified

Static characteristics

Drain-source breakdown voltage

Gate threshold voltage

Drain-source leakage current

(BR)DSS

=0 V,

=250 µA

GS(th)

DSS

=1.6 µA

=20 V,

=0 V,

=25 °C

=20 V,

=0 V,

=150 °C

Gate-source leakage current

Drain-source on-state resistance

GSS

DS(on)

=12 V,

=0 V

=2.5 V,

=0.29 A

0.7

0.95

1.2

415

100

600

=4.5 V,

=0.95 A

|>2|I

DS(on)max

=0.76 A

266

350

Transconductance

Performed on 40 mm

FR4 PCB. The traces are 1mm wide, 70μm thick and 20mm long; they are present on both

sides of the PCB

Rev 2.4

page 2

2013-04-15

BSD235N

Parameter

Symbol Conditions

min.

Dynamic characteristics

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Gate Charge Characteristics

Gate to source charge

Gate to drain charge

Gate charge total

Gate plateau voltage

Reverse Diode

Diode continous forward current

Diode pulse current

Diode forward voltage

Reverse recovery time

Reverse recovery charge

S,pulse

=0 V,

=0.95 A,

=25 °C

=10 V,

=0.95 A,

/dt =100 A/µs

=25 °C

0.9

5.2

0.97

3.8

1.2

0.5

plateau

=10 V,

=0.95 A,

=0 to 4.5 V

0.11

0.07

0.32

2.4

iss

oss

rss

d(on)

d(off)

=10 V,

=4.5 V,

=0.95 A,

G,ext

=0 V,

=10 V,

=1 MHz

3.2

3.8

3.6

4.5

1.2

Values

typ.

max.

Unit

Rev 2.4

page 3

2013-04-15

BSD235N

1 Power dissipation

tot

=f(T

)

2 Drain current

=f(T

);

≥4.5 V

0.5

0.75

0.375

tot

[W]

[A]

0.25

0.5

0.125

0.25

120

160

[°C]

3 Safe operating area

=f(V

);

=25 °C;

parameter:

4 Max. transient thermal impedance

thJA

=f(t

)

parameter:

1 ms

10 ms

100 µs

0.5

0.2

-1

thJA

[K/W]

[A]

0.1

0.05

0.01

10 µs

single pulse

-2

-3

-2

-1

-5

-4

-3

-2

-1

[V]

[s]

Rev 2.4

page 4

2013-04-15

BSD235N

5 Typ. output characteristics

=f(V

);

=25 °C

parameter:

4.5 V

3.5 V

6 Typ. drain-source on resistance

DS(on)

=f(I

);

=25 °C

parameter:

600

500

2.2 V

2.5 V

DS(on)

[mW]

400

[A]

3.5 V

300

4.5 V

2.5 V

200

2.3 V

100

[V]

[A]

7 Typ. transfer characteristics

=f(V

); |V

|>2|I

DS(on)max

8 Typ. forward transconductance

=f(I

);

=25 °C

0.5

25 °C

[S]

[A]

0.25

150 °C

[V]

[A]

Rev 2.4

page 5

2013-04-15

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