BSF045N03LQ3GXUMA1 datasheet, PDF

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BSF045N03LQ3GXUMA1: DescriptionPower Field-Effect Transistor, 18A I(D), 30V, 0.0072ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, METAL, WDSON-2; CategoryDiscrete semiconductor The transistor; File Size313KB，11 Pages; ManufacturerInfineon; Websitehttp://www.infineon.com/; Environmental Compliance

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BSF045N03LQ3GXUMA1 Overview

Power Field-Effect Transistor, 18A I(D), 30V, 0.0072ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, METAL, WDSON-2

BSF045N03LQ3GXUMA1 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Infineon
package instruction	CHIP CARRIER, R-MBCC-N2
Reach Compliance Code	compliant
ECCN code	EAR99
Avalanche Energy Efficiency Rating (Eas)	30 mJ
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	30 V
Maximum drain current (ID)	18 A
Maximum drain-source on-resistance	0.0072 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-MBCC-N2
Number of components	1
Number of terminals	2
Operating mode	ENHANCEMENT MODE
Package body material	METAL
Package shape	RECTANGULAR
Package form	CHIP CARRIER
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum pulsed drain current (IDM)	252 A
surface mount	YES
Terminal form	NO LEAD
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON

BSF045N03LQ3GXUMA1 Preview

BSF045N03LQ3 G

OptiMOS

3 Power-MOSFET

Features

• Pb-free plating; RoHS compliant

• Dual sided cooling

• Low profile (<0.7 mm)

• 100% avalanche tested

• Qualified for consumer level application

• Excellent gate charge x

DS(on)

product (FOM)

• Very low on-resistance

DS(on)

• Optimized for high switching frequency DC/DC converter

• Low parasitic inductance

Product Summary

DS(on),max

4.5

mΩ

MG-WDSON-2

• Compatible with DirectFET® package SQ footprint and outline

Type

BSF045N03LQ3 G

Package

MG-WDSON-2

Outline

Marking

0403

Maximum ratings,

=25 °C, unless otherwise specified

Parameter

Continuous drain current

Symbol Conditions

=10 V,

=25 °C

=10 V,

=100 °C

=10 V,

=25 °C,

thJA

=58 K/W

Pulsed drain current

Avalanche current, single pulse

Avalanche energy, single pulse

Gate source voltage

Value

252

±20

Unit

D,pulse

=25 °C

=35 A,

=25

Ω

DirectFET® is a trademark of International Rectfier Corporation

BSF045N03LQ3 G uses DirectFET® technology licensed from International Rectifier Corporation

Rev. 1.1

page 1

2008-11-10

BSF045N03LQ3 G

Maximum ratings,

=25 °C, unless otherwise specified

Parameter

Power dissipation

Symbol Conditions

tot

=25 °C

=25 °C,

thJA

=58 K/W

Operating and storage temperature

IEC climatic category; DIN IEC 68-1

stg

Value

2.2

-40 ... 150

55/150/56

°C

Unit

Parameter

Symbol Conditions

min.

Values

typ.

max.

Unit

Thermal characteristics

Thermal resistance, junction - case

thJC

bottom

top

Device on PCB

thJA

6 cm

cooling area

1.0

4.5

K/W

Electrical characteristics,

=25 °C, unless otherwise specified

Static characteristics

Drain-source breakdown voltage

Gate threshold voltage

Zero gate voltage drain current

(BR)DSS

=0 V,

=1 mA

GS(th)

DSS

=250 µA

=30 V,

=0 V,

=25 °C

=30 V,

=0 V,

=125 °C

Gate-source leakage current

Drain-source on-state resistance

Gate resistance

Transconductance

0.1

2.2

µA

5.8

3.8

1.4

100

7.2

4.5

Ω

mΩ

GSS

DS(on)

=20 V,

=0 V

=4.5 V,

=20 A

=10 V,

=20 A

|>2|I

DS(on)max

=30 A

Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain

connection. PCB is vertical in still air.

See figure 3 for more detailed information

Rev. 1.1

page 2

2008-11-10

BSF045N03LQ3 G

Parameter

Symbol Conditions

min.

Dynamic characteristics

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Gate Charge Characteristics

Gate to source charge

Gate charge at threshold

Gate to drain charge

Switching charge

Gate charge total

Gate plateau voltage

Gate charge total

g(th)

plateau

=15 V,

=20 A,

=0 to 10 V

=0.1 V,

=0 to 4.5 V

=15 V,

=0 V

=15 V,

=20 A,

=0 to 4.5 V

5.9

3.2

2.8

5.6

12.4

3.0

iss

oss

rss

d(on)

d(off)

=15 V,

=10 V,

=30 A,

=1.6

Ω

=0 V,

=15 V,

=1 MHz

2000

780

4.4

3.6

3.4

Values

typ.

max.

Unit

Gate charge total, sync. FET

Output charge

Reverse Diode

Diode continuous forward current

Diode pulse current

Diode forward voltage

g(sync)

oss

10.8

S,pulse

=25 °C

=0 V,

=20 A,

=25 °C

=15 V,

/dt =400 A/µs

0.82

252

Reverse recovery charge

See figure 13 for more detailed information

See figure 16 for gate charge parameter definition

Rev. 1.1

page 3

2008-11-10

BSF045N03LQ3 G

1 Power dissipation

tot

=f(T

)

2 Drain current

=f(T

);

≥10

tot

[W]

[A]

120

160

120

160

[°C]

3 Safe operating area

=f(V

);

=25 °C;

parameter:

limited by on-state

resistance

1 µs

10 µs

4 Max. transient thermal impedance

thJC

=f(t

)

parameter:

0.5

0.2

0.1

100 µs

thJC

[K/W]

0.05

[A]

1 ms

-1

0.02

0.01

single pulse

10 ms

-2

-1

-3

-6

-5

-4

-3

-2

-1

[V]

[s]

Rev. 1.1

page 4

2008-11-10

BSF045N03LQ3 G

5 Typ. output characteristics

=f(V

);

=25 °C

parameter:

200

10 V

6 Typ. drain-source on resistance

DS(on)

=f(I

);

=25 °C

parameter:

3.2 V

160

4.5 V

3.5 V

DS(on)

Ω

]

120

[A]

4.5 V

3.5 V

10 V

3.2 V

2.8 V

[V]

[A]

7 Typ. transfer characteristics

=f(V

); |V

|>2|I

DS(on)max

parameter:

100

8 Typ. forward transconductance

=f(I

);

=25 °C

200

150

[S]

150 °C

25 °C

[A]

100

120

160

[V]

[A]

Rev. 1.1

page 5

2008-11-10

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BSF045N03LQ3GXUMA1 Related Products

	BSF045N03LQ3GXUMA1	BSF045N03LQ3G
Description	Power Field-Effect Transistor, 18A I(D), 30V, 0.0072ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, METAL, WDSON-2	Power Field-Effect Transistor, 18A I(D), 30V, 0.0072ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, METAL, WDSON-2
Is it Rohs certified?	conform to	conform to
Maker	Infineon	Infineon
package instruction	CHIP CARRIER, R-MBCC-N2	CHIP CARRIER, R-MBCC-N2
Reach Compliance Code	compliant	compliant
ECCN code	EAR99	EAR99
Avalanche Energy Efficiency Rating (Eas)	30 mJ	30 mJ
Shell connection	DRAIN	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	30 V	30 V
Maximum drain current (ID)	18 A	18 A
Maximum drain-source on-resistance	0.0072 Ω	0.0072 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-MBCC-N2	R-MBCC-N2
Number of components	1	1
Number of terminals	2	2
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE
Package body material	METAL	METAL
Package shape	RECTANGULAR	RECTANGULAR
Package form	CHIP CARRIER	CHIP CARRIER
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	N-CHANNEL	N-CHANNEL
Maximum pulsed drain current (IDM)	252 A	252 A
surface mount	YES	YES
Terminal form	NO LEAD	NO LEAD
Terminal location	BOTTOM	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED
transistor applications	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON

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