EEWORLDEEWORLDEEWORLD

Part Number

Search

BSL205NH6327

Description
Small Signal Field-Effect Transistor, 2.5A I(D), 20V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TSOP-6
CategoryDiscrete semiconductor    The transistor   
File Size297KB,9 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Download Datasheet Parametric Compare View All

BSL205NH6327 Overview

Small Signal Field-Effect Transistor, 2.5A I(D), 20V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TSOP-6

BSL205NH6327 Parametric

Parameter NameAttribute value
MakerInfineon
package instructionSMALL OUTLINE, R-PDSO-G6
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresAVALANCHE RATED
ConfigurationSEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage20 V
Maximum drain current (ID)2.5 A
Maximum drain-source on-resistance0.05 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)24 pF
JESD-30 codeR-PDSO-G6
Number of components2
Number of terminals6
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeN-CHANNEL
GuidelineAEC-Q101
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
Transistor component materialsSILICON
BSL205N
OptiMOS
®
2 Small-Signal-Transistor
Features
• Dual N-channel
• Enhancement mode
• Super Logic level (2.5V rated)
• Avalanche rated
• Qualified according to AEC Q101
• Pb-free lead plating; RoHS compliant
• Halogen free according to IEC61249-2-21
Product Summary
V
DS
R
DS(on),max
V
GS
=4.5 V
V
GS
=2.5 V
I
D
20
50
85
2.5
A
V
mW
PG-TSOP6
6
5
4
1
2
3
Type
BSL205N
Package
PG-TSOP6
Tape and Reel Information
H6327: 3000 pcs/ reel
Marking
sPK
Lead Free
Yes
Packing
Non dry
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Parameter
(1)
Continuous drain current
Symbol Conditions
I
D
T
A
=25 °C
T
A
=70 °C
Pulsed drain current
Avalanche energy, single pulse
I
D,pulse
E
AS
T
A
=25 °C
I
D
=2.5 A,
R
GS
=25
W
I
D
=2.5 A,
V
DS
=16 V,
di /dt =200 A/µs,
T
j,max
=150 °C
Value
2.5
2.0
10
10.8
mJ
Unit
A
Reverse diode dv /dt
dv /dt
6
kV/µs
Gate source voltage
Power dissipation
(3)
Operating and storage temperature
ESD Class
Soldering Temperature
IEC climatic category; DIN IEC 68-1
(1)
V
GS
P
tot
T
j
,
T
stg
JESD22-A114 -HBM
T
A
=25 °C
±12
0.5
-55 ... 150
class 0 (<250V)
260 °C
55/150/56
V
W
°C
Remark: one of both transistors in operation.
Rev 2.3
page 1
2013-11-06

BSL205NH6327 Related Products

BSL205NH6327 BSL205N BSL205NL6327HTSA1
Description Small Signal Field-Effect Transistor, 2.5A I(D), 20V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TSOP-6 OptiMOS2 Small-Signal-Transistor MOSFET 2N-CH 20V 2.5A 6TSOP
Maker Infineon Infineon Infineon
Reach Compliance Code compliant compli unknown
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL
surface mount YES YES YES
package instruction SMALL OUTLINE, R-PDSO-G6 - SMALL OUTLINE, R-PDSO-G6
ECCN code EAR99 - EAR99
Other features AVALANCHE RATED - AVALANCHE RATED
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE - SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 20 V - 20 V
Maximum drain current (ID) 2.5 A - 2.5 A
Maximum drain-source on-resistance 0.05 Ω - 0.05 Ω
Maximum feedback capacitance (Crss) 24 pF - 24 pF
JESD-30 code R-PDSO-G6 - R-PDSO-G6
Number of components 2 - 2
Number of terminals 6 - 6
Package body material PLASTIC/EPOXY - PLASTIC/EPOXY
Package shape RECTANGULAR - RECTANGULAR
Package form SMALL OUTLINE - SMALL OUTLINE
Terminal form GULL WING - GULL WING
Terminal location DUAL - DUAL
Transistor component materials SILICON - SILICON
Is it lead-free? - Lead free Lead free
Is it Rohs certified? - conform to conform to
Maximum operating temperature - 150 °C 150 °C
7805 outputs a spike pulse of about 10V. Please help me
7805 outputs a spike pulse of about 10V. Please help. --EDN Electronic Design Technology...
wangwei20060608 MCU
LSM6DSL power consumption problem
I use the lsm6dsl sensor at 3.3 working voltage, the power consumption will increase by 2mA Is there something not configured correctly?/*** @briefInitialize the LSM6DSL sensor* @parampObj the device ...
wfagly MEMS sensors
[Rawpixel RVB2601 development board trial experience] TCP_SEVER communication
[i=s]This post was last edited by lugl4313820 on 2022-4-4 00:25[/i]My smart cold storage management system first needs to be built: server, wifi, sensor. The current project design is to use RVB to co...
lugl4313820 XuanTie RISC-V Activity Zone
Using EOCx INT to determine the completion of AD sampling
[align=left][color=#000]Hello everyone, I recently learned 28069 and conducted an experiment on ADC internal temperature sensor acquisition. [/color][/align][align=left][color=#000]In the routine, EOC...
nemo1991 Microcontroller MCU
A naked scheme, is this true?
I saw a new evaluation development board on the forum. It is simply a smart watch solution, and it uses Raspberry Pi! Add a battery, a heart rate sensor, and a case, and it becomes a watch.Below is th...
buildele Special Edition for Assessment Centres
Why does my DDS chip start to decay at 2Khz?
[i=s] This post was last edited by dontium on 2015-1-23 13:27 [/i] I used AD9834, a circuit I soldered myself, but the frequency starts to decay at 2khz. Why?· ......
jassica8888 Analogue and Mixed Signal

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 2318  214  137  810  1980  47  5  3  17  40 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号