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VI40M120CxM3

Description
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
File Size141KB,5 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Download Datasheet Compare View All

VI40M120CxM3 Overview

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

V40M120CxM3, VI40M120CxM3
www.vishay.com
Vishay General Semiconductor
Ultra Low V
F
= 0.46 V at I
F
= 5 A
FEATURES
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
TMBS
TO-220AB
®
• Trench MOS Schottky technology
TO-262AA
• Low forward voltage drop, low power losses
• High efficiency operation
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• AEC-Q101 qualified
• Material categorization: For definitions of compliance
please see
www.vishay.com/doc?99912
K
2
V40M120C
PIN 1
PIN 3
3
1
VI40M120C
PIN 1
PIN 3
2
3
1
PIN 2
CASE
TYPICAL APPLICATIONS
For use in high frequency DC/DC converters, switching
power supplies, freewheeling diodes, OR-ing diode, and
reverse battery protection.
PIN 2
K
MECHANICAL DATA
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
V
F
at I
F
= 20 A
T
J
max.
Package
Diode variations
2 x 20 A
120 V
250 A
0.64 V
175 °C
TO-220AB, TO-262AA
Dual common cathode
Case:
TO-220AB and TO-262AA
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Base P/NHM3 - halogen-free, RoHS-compliant, and
AEC-Q101 qualified
Terminals:
Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test, HM3 suffix
meets JESD 201 class 2 whisker test
Polarity:
As marked
Mounting Torque:
10 in-lbs maximum
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
per device
Maximum average forward rectified current (fig. 1)
per diode
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
Voltage rate of change (rated V
R
)
Operating junction and storage temperature range
I
F(AV)
I
FSM
dV/dt
T
J
, T
STG
SYMBOL
V
RRM
V40M120C
120
40
20
250
10 000
-40 to +175
V/μs
°C
A
VI40M120C
UNIT
V
Revision: 04-Dec-13
Document Number: 89465
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000

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Description Dual High-Voltage Trench MOS Barrier Schottky Rectifier Dual High-Voltage Trench MOS Barrier Schottky Rectifier
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