IRFS832 datasheet, PDF - EEWORLD Datasheet

IRFS832: DescriptionPower Field-Effect Transistor, 2.5A I(D), 500V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220F, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size28KB，1 Pages; ManufacturerSAMSUNG; Websitehttp://www.samsung.com/Products/Semiconductor/

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IRFS832 Overview

Power Field-Effect Transistor, 2.5A I(D), 500V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220F, 3 PIN

Parameter Name	Attribute value
Maker	SAMSUNG
Parts packaging code	TO-220F
package instruction	FLANGE MOUNT, R-PSFM-T3
Contacts	3
Reach Compliance Code	unknown
Avalanche Energy Efficiency Rating (Eas)	124 mJ
Shell connection	ISOLATED
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	500 V
Maximum drain current (Abs) (ID)	2.5 A
Maximum drain current (ID)	2.5 A
Maximum drain-source on-resistance	2 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-220AB
JESD-30 code	R-PSFM-T3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Polarity/channel type	N-CHANNEL
Maximum power consumption environment	35 W
Maximum power dissipation(Abs)	35 W
Maximum pulsed drain current (IDM)	16 A
Certification status	Not Qualified
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
transistor applications	SWITCHING
Transistor component materials	SILICON
Maximum off time (toff)	76 ns
Maximum opening time (tons)	40 ns

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