
Power Field-Effect Transistor, 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
| Parameter Name | Attribute value |
| Is it lead-free? | Lead free |
| Is it Rohs certified? | conform to |
| Maker | International Rectifier ( Infineon ) |
| package instruction | UNCASED CHIP, R-XUUC-N2 |
| Reach Compliance Code | compliant |
| Configuration | SINGLE |
| Minimum drain-source breakdown voltage | 60 V |
| FET technology | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 code | R-XUUC-N2 |
| Number of components | 1 |
| Number of terminals | 2 |
| Operating mode | ENHANCEMENT MODE |
| Package body material | UNSPECIFIED |
| Package shape | RECTANGULAR |
| Package form | UNCASED CHIP |
| Peak Reflow Temperature (Celsius) | 260 |
| Polarity/channel type | P-CHANNEL |
| Certification status | Not Qualified |
| surface mount | YES |
| Terminal form | NO LEAD |
| Terminal location | UPPER |
| Maximum time at peak reflow temperature | 40 |
| transistor applications | SWITCHING |
| Transistor component materials | SILICON |