MAR9187C60CS datasheet, PDF - EEWORLD Datasheet

MAR9187C60CS: DescriptionStandard SRAM, 64KX1, 60ns, CMOS, CDIP24,; Categorystorage storage; File Size766KB，15 Pages; ManufacturerPlessey Semiconductors Ltd.

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MAR9187C60CS Overview

Standard SRAM, 64KX1, 60ns, CMOS, CDIP24,

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Plessey Semiconductors Ltd.
package instruction	DIP, DIP24,.6
Reach Compliance Code	unknown
Maximum access time	60 ns
I/O type	SEPARATE
JESD-30 code	R-CDIP-T24
JESD-609 code	e0
memory density	65536 bit
Memory IC Type	STANDARD SRAM
memory width	1
Number of functions	1
Number of ports	1
Number of terminals	24
word count	65536 words
character code	64000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	125 °C
Minimum operating temperature	-55 °C
organize	64KX1
Output characteristics	3-STATE
Exportable	NO
Package body material	CERAMIC, METAL-SEALED COFIRED
encapsulated code	DIP
Encapsulate equivalent code	DIP24,.6
Package shape	RECTANGULAR
Package form	IN-LINE
Parallel/Serial	PARALLEL
power supply	5 V
Certification status	Not Qualified
Filter level	38535V;38534K;883S
Maximum standby current	0.004 A
Minimum standby current	2 V
Maximum slew rate	0.013 mA
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	NO
technology	CMOS
Temperature level	MILITARY
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal pitch	2.54 mm
Terminal location	DUAL
total dose	100k Rad(Si) V

Shortcut: A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 AA AB AC AD AE AF AG AH AI AJ AK AL AM AN AO AP AQ AR AS AT AU AV AW AX AY AZ B0 B1 B2 B3 B4 B5 B6 B7 B8 B9 BA BB BC BD BE BF BG BH BI BJ BK BL BM BN BO BP BQ BR BS BT BU BV BW BX BY BZ C0 C1 C2 C3 C4 C5 C6 C7 C8 C9 CA CB CC CD CE CF CG CH CI CJ CK CL CM CN CO CP CQ CR CS CT CU CV CW CX CY CZ D0 D1 D2 D3 D4 D5 D6 D7 D8 D9 DA DB DC DD DE DF DG DH DI DJ DK DL DM DN DO DP DQ DR DS DT DU DV DW DX DZ

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