05107
Only One Name Means ProTek’Tion™
P0402FC3.3C - P0402FC36C
250w FliP ChiP tvs aRRay
DesCRiPtion
The P0402FCxxC Series Flip Chips employ advanced silicon P/N junction technology for unmatched board-level
transient voltage protection against Electrostatic Discharge (ESD) and Electrical Fast Transients (EFT). Developed
specifically for high-density circuit protection, this series meets the IEC 61000-4-2 and 61000-4-4 requirements. These
devices are ideally suited for handheld devices, PCMCIA and SMART cards.
This series provides ESD protection greater than 25 kilovolts with a peak pulse power dissipation of 250 Watts per
line for an 8/20µs waveform. In addition, the P0402FCxxC series features superior clamping performance, low leak-
age current characteristics and a response time of less than a nanosecond. Their low inductance virtually eliminates
overshoot voltage due to package inductance.
0402 PaCkage
FeatuRes
•
•
•
•
•
•
•
•
Compatible with IEC 61000-4-2 (ESD): Air 15kV, Contact 8kV
Compatible with IEC 61000-4-4 (EFT): 40A, 5/50ns
ESD Protection > 25 kilovolts
Available in Voltages Ranging from 3.3V to 36V
250 Watts Peak Pulse Power per Line (tp = 8/20µs)
Protection for 1 Line
RoHS Compliant
REACH Compliant
aPPliCations
•
•
•
•
•
Cellular Phones
MCM Boards
Wireless Communication Circuits
IR LEDs
SMART & PCMCIA Cards
MeChaniCal ChaRaCteRistiCs
•
•
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Standard EIA Chip Size: 0402
Approximate Weight: 0.73 milligrams
Lead-Free Plating
Solder Reflow Temperature:
Lead-Free - Sn/Ag/Cu, 96/3.5/0.5: 260-270°C
Flammability Rating UL 94V-0
8mm Tape per EIA Standard 481
Top Contacts: Solder Bump 0.004” in Height (Nominal)
CiRCuit DiagRaM
Pin 1
Pin 2
1 line of Protection
05107.R15 9/12
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05107
Only One Name Means ProTek’Tion™
P0402FC3.3C - P0402FC36C
tyPiCal DeviCe ChaRaCteRistiCs
MaXiMuM Ratings
@ 25°C unless otherwise specified
PaRaMeteR
Peak Pulse Power (tp = 8/20µs) - See Figure 1
Operating Temperature
Storage Temperature
syMBol
P
PP
T
A
T
STG
value
250
-55 to 150
-55 to 150
units
Watts
°C
°C
eleCtRiCal ChaRaCteRistiCs PeR line
@ 25°C unless otherwise specified
PaRt
nuMBeR
(note 1)
RateD
stanD-oFF
voltage
v
wM
volts
P0402FC3.3C
P0402FC05C
P0402FC08C
P0402FC12C
P0402FC15C
P0402FC24C
P0402FC36C
notes
3.3
5.0
8.0
12.0
15.0
24.0
36.0
MiniMuM
BReakDown
voltage
@ 1ma
v
(BR)
volts
4.0
6.0
8.5
13.3
16.7
26.7
40.0
MaXiMuM
ClaMPing
voltage
(Fig. 2)
@ i
P
= 1a
v
C
volts
7.0
11.0
13.2
19.8
25.4
37.2
70.0
MaXiMuM
ClaMPing
voltage
(Fig. 2)
@ 8/20µs
v
C
@ i
PP
12.5V @ 20A
14.7V @ 17A
19.2V @ 13A
29.7V @ 9A
35.7V @ 7A
55.0V @ 5A
84.0V @ 3A
MaXiMuM
leakage
CuRRent
(note 2)
@v
wM
i
D
µa
75*
10**
10***
1
1
1
1
tyPiCal
CaPaCitanCe
@0v, 1Mhz
C
pF
150
100
75
50
40
30
25
1. All devices are bidirectional. Electrical characteristics apply in both directions.
2. *Maximum leakage current < 5µA @ 2.8V. **Maximum leakage current < 500nA @ 3.3V. ***Maximum leakage current < 200nA @ 5V.
05107.R15 9/12
Page 2
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05107
Only One Name Means ProTek’Tion™
P0402FC3.3C - P0402FC36C
tyPiCal DeviCe ChaRaCteRistiCs
FiguRe 1
Peak Pulse PoweR vs Pulse tiMe
10,000
P
PP
- Peak Pulse Power - watts
1,000
250W, 8/20µs Waveform
100
10
0.1
1
10
100
t
d
- Pulse Duration - µs
1,000
10,000
120
i
PP
- Peak Pulse Current - % of i
PP
FiguRe 2
Pulse wave FoRM
t
f
Peak Value I
PP
TEST
WAVEFORM
PARAMETERS
t
f
= 8µs
t
d
= 20µs
100
80
% of Rated Power
FiguRe 3
PoweR DeRating CuRve
Peak Pulse Power
8/20µs
100
80
60
40
20
0
0
5
e
-t
60
40
20
0
Average Power
t
d
= t/(I
PP
/2)
10
15
t - time - µs
20
25
30
0
25
50
75 100 125
t
a
- ambient temperature - °C
150
05107.R15 9/12
Page 3
www.protekdevices.com
05107
Only One Name Means ProTek’Tion™
P0402FC3.3C - P0402FC36C
tyPiCal DeviCe ChaRaCteRistiCs
FiguRe 4
oveRshoot & ClaMPing voltage FoR P0402FC05C
35
25
5 volts per Division
15
5
-5
esD test Pulse - 25 kilovolt, 1/30ns (waveshape)
FiguRe 5
tyPiCal ClaMPing voltage vs Peak Pulse CuRRent P0402FC05C
12
v
C
- Clamping voltage - volts
8
4
0
0
5
10
i
PP
- Peak Pulse Current - amps
15
20
05107.R15 9/12
Page 4
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05107
Only One Name Means ProTek’Tion™
P0402FC3.3C - P0402FC36C
sPiCe MoDel
FiguRe 1
sPiCe MoDel FoR
I/O
ABD
ABD
GND
aBD - avalanche Breakdown Diode (tvs)
taBle 1 - sPiCe PaRaMeteRs
PaRaMeteR
BV
IBV
C
jo
I
S
Vj
M
N
R
S
TT
EG
unit
V
µA
pF
A
V
-
-
-
s
eV
aBD(tvs)
See Table 2
1
See Table 2
See Table 2
0.6
0.33
1
See Table 2
1E-8
1.11
PaRt nuMBeR
P0402FC3.3C
P0402FC05C
P0402FC08C
P0402FC12C
P0402FC15C
P0402FC24C
P0402FC36C
taBle 2 - aBD sPeCiFiC sPiCe PaRaMeteRs
i
s
(aMPs)
B
v
(volts)
C
jo
(
p
F)
4.0
6.0
8.5
13.3
16.7
26.7
40.2
150
100
75
50
40
20
15
1E-11
1E-11
1E-13
1E-13
1E-13
1E-13
1E-13
R
s
(ohMs)
0.20
0.16
0.33
0.51
0.53
0.63
0.73
05107.R15 9/12
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