DCR2270Y65
DCR2270Y65
Phase Control Thyristor
Preliminary Information
DS5768-1.1 April 2004
FEATURES
I
I
KEY PARAMETERS
V
DRM
I
T(AV)
I
TSM
dV/dt *
dI/dt
6500V
2275A
30750A
1500V/
µ
s
300A/
µ
s
Double Side Cooling
High Surge Capability
APPLICATIONS
I
I
I
I
High Power Drives
High Voltage Power Supplies
SVC and HVDC
Static Switches
* Higher dV/dt selections available
VOLTAGE RATINGS
Part and Ordering
Number
Repetitive Peak
Voltages
V
DRM
and V
DRM
V
6500
6000
5500
5000
Conditions
DCR2270Y65
DCR2270Y60
DCR2270Y55
DCR2270Y50
T
vj
= –40˚C to 125˚C,
I
DRM
= I
RRM
= 300mA,
V
DRM
, V
RRM
t
p
= 10ms,
V
DSM
& V
RSM
=
V
DRM
& V
RRM
+ 100V
respectively
Outline type code:
Y
Lower voltage grades available.
ORDERING INFORMATION
When ordering, select the required part number shown in the
Voltage Ratings selection table.
For example:
DCR2270Y65
Note: Please use the complete part number when ordering and
quote this number in any future correspondance relating to your
order.
(See Package Details for further information)
Fig. 1 Package outline
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DCR2270Y65
CURRENT RATINGS
T
case
= 60˚C unless stated otherwise.
Symbol
Double Side Cooled
I
T(AV)
I
T(RMS)
I
T
Mean on-state current
RMS value
Continuous (direct) on-state current
Half wave resistive load
-
-
2275
3574
3270
A
A
A
Parameter
Test Conditions
Max.
Units
SURGE RATINGS
Symbol
I
TSM
I
2
t
Parameter
Surge (non-repetitive) on-state current
I
2
t for fusing
Test Conditions
10ms half sine, T
case
= 125˚C
V
R
= 0
Max.
30.75
4.73 x 10
6
Units
kA
A
2
s
THERMAL AND MECHANICAL RATINGS
Symbol
R
th(j-c)
Parameter
Thermal resistance - junction to case
Test Conditions
Double side cooled
Single side cooled
DC
Anode DC
Cathode DC
R
th(c-h)
Thermal resistance - case to heatsink
Clamping force 50.0kN
Double side
Min.
-
-
-
-
-
-
-
–55
45.0
Max.
Units
0.00835 ˚C/W
0.0134
0.023
0.002
0.004
135
125
125
55.0
˚C/W
˚C/W
˚C/W
˚C/W
˚C
˚C
˚C
kN
(with mounting compound) Single side
T
vj
Virtual junction temperature
On-state (conducting)
Reverse (blocking)
T
stg
F
m
Storage temperature range
Clamping force
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DCR2270Y65
DYNAMIC CHARACTERISTICS
Symbol
I
RRM
/I
DRM
dV/dt
dI/dt
Parameter
Peak reverse and off-state current
Max. linear rate of rise of off-state voltage
Rate of rise of on-state current
Test Conditions
At V
RRM
/V
DRM
, T
case
= 125˚C
To 67% V
DRM
, T
j
= 125˚C, gate open
From 67% V
DRM
to 2x I
T(AV)
Repetitive 50Hz
Gate source 30V, 10Ω, Non-repetitive
t
r
< 0.5µs, T
j
= 125˚C
V
T(TO)
Threshold voltage - Low level
Threshold voltage - High level
r
T
On-state slope resistance - Low level
On-state slope resistance - High level
t
gd
Delay time
500A to 3000A at T
case
= 125˚C
3000A to 7200A at T
case
= 125˚C
500A to 3000A at T
case
= 125˚C
3000A to 7200A at T
case
= 125˚C
V
D
= 67% V
DRM
, gate source 30V, 10Ω
t
r
= 0.5µs, T
j
= 25˚C
t
q
Turn-off time
T
j
=125˚C, V
R
= 200V, dI/dt = 1A/µs,
dV
DR
/dt = 20V/µs linear
Q
S
I
L
I
H
Stored charge
Latching current
Holding current
I
T
= 2000A, T
j
=125˚C, dI/dt = 1A/µs,
T
j
= 25˚C, V
D
= 5V
T
j
= 25˚C, R
G–K
=
∞,
I
TM
= 500A, I
T
= 5A
2400
TBD
TBD
6000
TBD
TBD
µC
mA
mA
-
1200
µs
-
-
-
-
TBD
1.0
1.237
0.4286
0.3518
TBD
V
V
mΩ
mΩ
µs
Min.
-
-
-
-
Max.
300
1500
150
300
Units
mA
V/µs
A/µs
A/µs
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DCR2270Y65
GATE TRIGGER CHARACTERISTICS AND RATINGS
Symbol
V
GT
V
GD
I
GT
I
GD
Parameter
Gate trigger voltage
Gate non-trigger voltage
Gate trigger current
Gate non-trigger current
Test Conditions
V
DRM
= 5V, T
case
= 25
o
C
At V
DRM
T
case
= 125
o
C
V
DRM
= 5V, T
case
= 25
o
C
V
DRM
= 5V, T
case
= 25
o
C
Max.
1.5
TBD
250
TBD
Units
V
V
mA
mA
CURVES
7000
T
j
= 25˚C, min. limit
T
j
= 25˚C, max. limit
T
j
= 125˚C, min. limit
T
j
= 125˚C, max. limit
6000
Instantaneous on-state current, I
T
- (A)
5000
4000
3000
2000
1000
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
Instantaneous on-state voltage, V
T
- (V)
4.0
Fig.2 Maximum (limit) on-state characteristics
V
TM
EQUATION
V
TM
= A + Bln (I
T
) + C.I
T
+D.√I
T
A = 0.537658
B = 0.064222
C = 0.000301
D = 0.005935
these values are valid for T
j
= 125˚C for I
T
100A to 7200A
Where
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DCR2270Y65
16.0
Conduction
angle
14.0
180˚
120˚
90˚
60˚
30˚
130
120
110
100
Maximum case temperature - (˚C)
90
80
70
60
50
40 Conduction
angle
30
20
0˚
180˚
0˚
180˚
12.0
Mean power dissipation - (kW)
10.0
8.0
6.0
4.0
2.0
10
0
0
180˚
120˚
90˚
60˚
30˚
500
1000
1500
2000
2500
3000
Mean on-state current, I
T(AV)
- (A)
3500
0
0
500
1000
1500
2000
2500
Mean on-state current, I
T(AV)
- (A)
3000
3500
Fig.3 On-state power dissipation - sine wave
Fig.4 Maximum permissible case temperature,
double side cooled - sine wave
16.0
Conduction
angle
dc
180˚
120˚
90˚
60˚
30˚
130
120
110
14.0
0˚
180˚
Heatsink temperature, T
Heatsink
- (˚C)
100
90
80
70
60
50
40 Conduction
angle
30
20
10
0
0
180˚
120˚
90˚
60˚
30˚
500
1000
1500
2000
2500
Mean on-state current, I
T(AV)
- (A)
3000
12.0
Mean power dissipation - (kW)
10.0
8.0
6.0
4.0
2.0
0˚
180˚
0
0
500 1000 1500 2000 2500 3000 3500 4000 4500
Mean on-state current, I
T(AV)
- (A)
Fig.5 Maximum permissible heatsink temperature,
double side cooled - sine wave
Fig.6 On-state power dissipation - square wave
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