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SSF2122E_15

Description
20V Dual N-Channel MOSFET
File Size1MB,8 Pages
ManufacturerGood-Ark
Websitehttp://www.goodark.com/
Download Datasheet Compare View All

SSF2122E_15 Overview

20V Dual N-Channel MOSFET

SSF2122E
20V Dual N-Channel MOSFET
Main Product Characteristics
V
DSS
20V
R
DS
(on) 15.2mohm(typ.)
I
D
7A
DFN 3x3-8L
Marking and Pin
Assignment
Schematic Diagram
Features and Benefits
Advanced MOSFET process technology
Special designed for PWM, load switching and
general purpose applications
Ultra low on-resistance with low gate charge
Fast switching and reverse body recovery
150℃ operating temperature
Lead free product
Description
It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with
high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable
device for use in power switching application and a wide variety of other applications.
Absolute Max Rating
Symbol
I
D
@ TC = 25°C
I
D
@ TC = 100°C
I
DM
P
D
@TC = 25°C
V
DS
V
GS
T
J
T
STG
Parameter
Continuous Drain Current, V
GS
@ 10V(Silicon Limited)
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Drain-Source Voltage
Gate-to-Source Voltage
Operating Junction and Storage Temperature Range
Max.
7
5
42
1.4
20
± 12
-55 to + 150
W
V
V
°C
A
Units
www.goodark.com
Page 1 of 8
Rev.1.0

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