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R2083_15

Description
PHOTOMULTIPLIER TUBES
File Size40KB,2 Pages
ManufacturerHamamatsu
Websitehttp://www.hamamatsu.com
Download Datasheet View All

R2083_15 Overview

PHOTOMULTIPLIER TUBES

PHOTOMULTIPLIER TUBES
R2083, R3377
For Scintillation Counting and High Energy Physics
51 mm (2 Inch) Diameter, Subnanosecond Time Response (Tr = 0.7 ns)
8-Stage, R2083: Borosilicate Window, R3377: Synthetic Silica Window,
Bialkali Photocathode
GENERAL
Parameter
R2083
Spectral Response
R3377
Wavelength of Maximum Response
MateriaI
Photocathode
Minimum Effective Area
R2083
Window Material
R3377
Structure
Dynode
Number of Stages
Operating Ambient Temperature
Storage Temperature
Base
Suitable Socket
Description / Value
300 to 650
160 to 650
420
Bialkali
46
Borosilicate glass
Synthetic silica glass
Linear focused type
8
-30 to +50
-30 to +50
19-pin glass base with SMA output connector
E678-19J (supplied)
Unit
nm
nm
nm
mm
°C
°C
MAXIMUM RATINGS (Absolute Maximum Values)
Supply Voltage
Average Anode Current
Parameter
Between Anode and Cathode
Between Anode and Last Dynode
Value
3500
1000
0.2
Unit
V
V
mA
CHARACTERISTICS (at 25
°C)
Parameter
Luminous (2856 K)
Radiant at 420 nm
Blue Sensitivity Index (CS 5-58)
Anode Sensitivity
Luminous (2856 K)
Gain
Anode Dark Current (after 30 min storage in darkness)
Anode Pulse Rise Time
Time Response
Electron Transit Time
Transit Time Spread
Pulse Linearity at 2 % Deviation
R2083
R3377
Min.
60
50
Typ.
80
80
10.0
9.5
200
2.5
×
10
6
100
0.7
16
0.37
100
Max.
800
Unit
µA/lm
mA/W
A/lm
nA
ns
ns
ns
mA
Cathode Sensitivity
VOLTAGE DISTRIBUTION RATIO AND SUPPLY VOLTAGE
Electrodes
K
G
Dy1 Dy2 Dy3 Dy4 Dy5 Dy6 Acc Dy7 Dy8
P
Ratio
1.3
4.8
1.2
1.8
1
1
1
1
0.5
3
2.5
Supply Voltage: 3000 Vdc, K: Cathode, Dy: Dynode, P: Anode, G: Grid
Subject to local technical requirements and regulations, availability of products included in this promotional material may vary. Please consult with our sales office.
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are
subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2013 Hamamatsu Photonics K.K.
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