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BFN23E6327

Description
Small Signal Bipolar Transistor, 0.05A I(C), 250V V(BR)CEO, 1-Element, PNP, Silicon
CategoryDiscrete semiconductor    The transistor   
File Size109KB,4 Pages
ManufacturerSIEMENS
Websitehttp://www.infineon.com/
Download Datasheet Parametric Compare View All

BFN23E6327 Overview

Small Signal Bipolar Transistor, 0.05A I(C), 250V V(BR)CEO, 1-Element, PNP, Silicon

BFN23E6327 Parametric

Parameter NameAttribute value
MakerSIEMENS
package instructionSMALL OUTLINE, R-PDSO-G3
Reach Compliance Codeunknown
ECCN codeEAR99
Maximum collector current (IC)0.05 A
Collector-emitter maximum voltage250 V
ConfigurationSINGLE
Minimum DC current gain (hFE)50
JESD-30 codeR-PDSO-G3
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typePNP
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)100 MHz

BFN23E6327 Related Products

BFN23E6327
Description Small Signal Bipolar Transistor, 0.05A I(C), 250V V(BR)CEO, 1-Element, PNP, Silicon
Maker SIEMENS
package instruction SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code unknown
ECCN code EAR99
Maximum collector current (IC) 0.05 A
Collector-emitter maximum voltage 250 V
Configuration SINGLE
Minimum DC current gain (hFE) 50
JESD-30 code R-PDSO-G3
Number of components 1
Number of terminals 3
Package body material PLASTIC/EPOXY
Package shape RECTANGULAR
Package form SMALL OUTLINE
Polarity/channel type PNP
Certification status Not Qualified
surface mount YES
Terminal form GULL WING
Terminal location DUAL
transistor applications SWITCHING
Transistor component materials SILICON
Nominal transition frequency (fT) 100 MHz
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