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DSK10B-AT1

Description
1 A, 100 V, SILICON, SIGNAL DIODE
CategoryDiscrete semiconductor    diode   
File Size29KB,3 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Environmental Compliance
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DSK10B-AT1 Overview

1 A, 100 V, SILICON, SIGNAL DIODE

DSK10B-AT1 Parametric

Parameter NameAttribute value
Brand NameON Semiconduc
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerON Semiconductor
package instructionO-PALF-W2
Manufacturer packaging code362AU
Reach Compliance Code_compli
ECCN codeEAR99
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JESD-30 codeO-PALF-W2
JESD-609 codee3
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Maximum output current1 A
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
Certification statusNot Qualified
Maximum repetitive peak reverse voltage100 V
surface mountNO
Terminal surfaceTin (Sn)
Terminal formWIRE
Terminal locationAXIAL
Ordering number : EN2855D
DSK10
SANYO Semiconductors
DATA SHEET
DSK10
Features
Diffused Junction Type Silicon Diode
Designed for 5mm-pitch Automatic Insertion
1.0A Power Rectifier
Designed for 5mm-pitch automatic insertion.
Small plastic molded structure (3mm body).
Peak reverse voltage : 100 to 400V.
Average output current : 1.0A.
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Peak Reverse Voltage
Average Output Current
Surge Forward Current
Junction Temperature
Storage Temperature
Symbol
VRM
IO
IFSM
Tj
Tstg
50Hz sine wave, 1cycle
Conditions
DSK10B
100
1.0
45
150
--40 to +150
DSK10C
200
DSK10E
400
Unit
V
A
A
°C
°C
Electrical Characteristics
at Ta=25°C
Parameter
Forward Voltage
Reverse Current
Symbol
VF
IR
Conditions
IF=1.0A
VR : At each VRM
Ratings
min
typ
max
1.1
10
Unit
V
µA
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer' s products or
equipment.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
82207RC TI IM TC-00000832 / 33103 TS IM TA-4136 / 91001 GI IM / 53098 HA (KT) / 92995 GI (KOTO) / D268 TA, TS No.2855-1/3

DSK10B-AT1 Related Products

DSK10B-AT1 DSK10B-BT DSK10C-BT DSK10C-ET1 DSK10E-AT1 DSK10E-ET1 EN2855 DSK10C-AT1
Description 1 A, 100 V, SILICON, SIGNAL DIODE 1 A, 100 V, SILICON, SIGNAL DIODE 1 A, 100 V, SILICON, SIGNAL DIODE 1 A, 100 V, SILICON, SIGNAL DIODE 1 A, 400 V, SILICON, SIGNAL DIODE 1 A, 100 V, SILICON, SIGNAL DIODE 1 A, 100 V, SILICON, SIGNAL DIODE 1 A, 200 V, SILICON, SIGNAL DIODE
Brand Name ON Semiconduc ON Semiconduc ON Semiconduc ON Semiconduc ON Semiconduc ON Semiconduc - ON Semiconduc
Is it lead-free? Lead free Lead free Lead free Lead free Lead free Lead free - Lead free
Maker ON Semiconductor ON Semiconductor ON Semiconductor - ON Semiconductor ON Semiconductor - ON Semiconductor
Manufacturer packaging code 362AU 362AP 362AP 362AN 362AP 362AN - 362AP
Reach Compliance Code _compli _compli _compli _compli _compli _compli - _compli
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 - EAR99
Shell connection ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED - ISOLATED
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE - SINGLE
Diode component materials SILICON SILICON SILICON SILICON SILICON SILICON - SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE - RECTIFIER DIODE
JESD-30 code O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 - O-PALF-W2
JESD-609 code e3 e3 e3 e3 e3 e3 - e3
Number of components 1 1 1 1 1 1 - 1
Number of terminals 2 2 2 2 2 2 - 2
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C - 150 °C
Maximum output current 1 A 1 A 1 A 1 A 1 A 1 A - 1 A
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY - PLASTIC/EPOXY
Package shape ROUND ROUND ROUND ROUND ROUND ROUND - ROUND
Package form LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM - LONG FORM
Certification status Not Qualified Not Qualified Not Qualified - Not Qualified - - Not Qualified
Maximum repetitive peak reverse voltage 100 V 100 V 200 V 200 V 400 V 400 V - 200 V
surface mount NO NO NO NO NO NO - NO
Terminal surface Tin (Sn) Tin (Sn) Tin (Sn) Tin (Sn) Tin (Sn) Tin (Sn) - Tin (Sn)
Terminal form WIRE WIRE WIRE WIRE WIRE WIRE - WIRE
Terminal location AXIAL AXIAL AXIAL AXIAL AXIAL AXIAL - AXIAL
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