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RN1972HFE

Description
TRANSISTOR 100 mA, 40 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, EXTREME SUPERMINI, 2-2N1A, ES6, 6 PIN, BIP General Purpose Small Signal
CategoryDiscrete semiconductor    The transistor   
File Size121KB,6 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Download Datasheet Parametric View All

RN1972HFE Overview

TRANSISTOR 100 mA, 40 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, EXTREME SUPERMINI, 2-2N1A, ES6, 6 PIN, BIP General Purpose Small Signal

RN1972HFE Parametric

Parameter NameAttribute value
MakerToshiba Semiconductor
package instructionSMALL OUTLINE, R-PDSO-F6
Contacts6
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresBUILT-IN BIAS RESISTOR
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage40 V
ConfigurationSEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)300
JESD-30 codeR-PDSO-F6
JESD-609 codee0
Number of components2
Number of terminals6
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.1 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceTIN LEAD
Terminal formFLAT
Terminal locationDUAL
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)250 MHz

RN1972HFE Preview

RN1972HFE,RN1973HFE
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)
RN1972HFE,RN1973HFE
Switching, Inverter Circuit, Interface Circuit and Driver
Circuit Applications
Two devices are incorporated into an Extreme-Super-Mini (6 pin)
package.
Incorporating a bias resistor into a transistor reduces parts count.
Reducing the parts count enable the manufacture of ever more compact
equipment and save assembly cost.
Complementary to RN2972HFE, RN2973HFE
Unit: mm
Equivalent Circuit
C
B
R1
E
JEDEC
JEITA
TOSHIBA
2−2N1A
Maximum Ratings
(Ta = 25°C) (Q1, Q2 common)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
(Note)
T
j
T
stg
Rating
40
40
5
100
100
150
−55~150
Unit
V
V
V
mA
mW
°C
°C
Weight:0.003g (typ.)
Equivalent Circuit
(top view)
6
5
4
Q1
Q2
1
2
3
Note: Total rating
1
2004-03-02
RN1972HFE,RN1973HFE
Electrical Characteristics
(Ta = 25°C) (Q1, Q2 common)
Characteristics
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Input resistor
RN1972HFE
RN1973HFE
Symbol
I
CBO
I
EBO
h
FE
V
CE (sat)
f
T
C
ob
R1
Test Condition
V
CB
=
40 V, I
E
=
0
V
EB
=
5 V, I
C
=
0
V
CE
=
5 V, I
C
=
1 mA
I
C
=
5 mA, I
B
=
0.25 mA
V
CE
=
10 V, I
C
=
5 mA
V
CB
=
10 V, I
E
=
0, f
=
1 MHz
Min
300
17.6
37.6
Typ.
0.06
250
3
22
47
Max
100
100
0.15
26.4
56.4
V
MHz
pF
kΩ
Unit
nA
nA
2
2004-03-02
RN1972HFE,RN1973HFE
Q1,Q2 Common
RN1972HFE
100
COLLECTOR CURRENT IC (mA)
COLLECTOR CURRENT IC (µA)
IC - VI(ON)
10000
RN1972HFE
IC - VI(OFF)
Ta=100°C
10
1000
Ta=100°C
100
EMITTER COMMON
VCE=5V
10
0
0.2
0.4
0.6
0.8
1
1.2
INPUT VOLTAGE VI(OFF) (V)
1.4
25
1
-25
EMITTER COMMON
VCE=5V
0.1
0.1
1
10
INPUT VOLTAGE VI(ON) (V)
100
25
-25
RN1973HFE
100
COLLECTOR CURRENT IC (mA)
IC - VI(ON)
10000
COLLECTOR CURRENT IC (µA)
RN1973HFE
IC - VI(OFF)
10
Ta=100°C
1000
Ta=100°C
100
25
1
-25
EMITTER COMMON
VCE=5V
10
100
25
-25
EMITTER COMMON
VCE=5V
10
0
0.2
0.4
0.6
0.8
1
1.2
1.4
0.1
0.1
1
INPUT VOLTAGE VI(ON) (V)
INPUT VOLTAGE VI(OFF) (V)
3
2004-03-02
RN1972HFE,RN1973HFE
Q1,Q2 Common
RN1972HFE
10000
hFE - IC
1000
COLLECTOR-EMITTER SATURATION
VOLTAGE VCE(sat) (mV)
RN1972HFE
VCE(sat) - IC
DC CURRENT GAIN hFE
Ta=100°C
1000
100
Ta=100°C
-25
100
25
10
-25
25
EMITTER COMMON
IC/IB=20
EMITTER COMMON
VCE=5V
10
0.1
1
10
100
COLLECTOR CURRENT IC (mA)
1
0.1
1
10
100
COLLECTOR CURRENT IC (mA)
RN1973HFE
10000
hFE - IC
1000
COLLECTOR-EMITTER SATURATION
VOLTAGE VCE(sat) (mV)
RN1973HFE
VCE(sat) - IC
DC CURRENT GAIN hFE
Ta=100°C
1000
100
Ta=100°C
-25
100
25
10
-25
25
EMITTER COMMON
IC/IB=20
EMITTER COMMON
VCE=5V
10
0.1
1
10
100
COLLECTOR CURRENT IC (mA)
1
0.1
1
10
100
COLLECTOR CURRENT IC (mA)
4
2004-03-02
RN1972HFE,RN1973HFE
Type Name
Marking
Type name
RN1972HFE
XX3
Type name
RN1973HFE
XX4
5
2004-03-02
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