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BU931PFI

Description
15A, 400V, NPN, Si, POWER TRANSISTOR
CategoryDiscrete semiconductor    The transistor   
File Size96KB,8 Pages
ManufacturerSTMicroelectronics
Websitehttp://www.st.com/
Download Datasheet Parametric View All

BU931PFI Overview

15A, 400V, NPN, Si, POWER TRANSISTOR

BU931PFI Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerSTMicroelectronics
package instructionFLANGE MOUNT, R-PSFM-T3
Reach Compliance Codecompliant

BU931PFI Preview

BU931/BU931P
BU931PFI
HIGH VOLTAGE IGNITION COIL DRIVER
NPN POWER DARLINGTON
s
s
s
VERY RUGGED BIPOLAR TECHNOLOGY
HIGH OPERATING JUNCTION
TEMPERATURE
WIDE RANGE OF PACKAGES
TO-3
APPLICATIONS
s
HIGH RUGGEDNESS ELECTRONIC
IGNITIONS
1
2
3
2
3
2
TO-218
1
ISOWATT218
1
INTERNAL SCHEMATIC DIAGRAM
for
TO-3
Emitter: pin 2
Base: pin1
Collector: tab
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CES
V
CEO
V
EBO
I
C
I
CM
I
B
I
BM
P
t ot
T
stg
T
j
Parameter
BU931
Collector-Emitter Voltage (V
BE
= 0)
Collector-Emitter Voltage (I
B
= 0)
Emitter-Base Voltage (I
C
= 0)
Collector Current
Collector Peak Current
Base Current
Base Peak Current
Total Dissipation at T
c
= 25 C
Storage Temperature
Max. O perating Junction Temperature
o
Value
BU931P
500
400
5
15
30
1
5
175
-65 to 200
200
135
-65 to 175
175
60
-65 to 175
175
BU931PFI
Uni t
V
V
V
A
A
A
A
W
o
o
C
C
1/8
September 1997
BU931/BU931P/BU931PFI
THERMAL DATA
TO-3
R
t hj-ca se
Thermal Resistance Junction-case
Max
1
TO-218
1.1
ISOW ATT 218
2.5
o
C/W
ELECTRICAL CHARACTERISTICS
(T
case
= 25
o
C unless otherwise specified)
Symb ol
I
CES
I
CEO
I
EBO
Parameter
Collector Cut-off
Current (V
BE
= 0)
Collector Cut-off
Current (I
B
= 0)
Emitter Cut-off Current
(I
C
= 0)
Test Cond ition s
V
CE
= 500 V
V
CE
= 500 V
V
CE
= 450 V
V
CE
= 450 V
V
EB
= 5 V
I
C
= 100 mA L = 10 mH I
B
= 0
V
CLAMP
= RAT ED V
CEO
(See FIG.4)
I
C
= 7 A
I
C
= 8 A
I
C
= 10 A
I
C
= 7 A
I
C
= 8 A
I
C
= 10 A
I
C
= 5 A
I
F
= 10 A
V
CC
= 24 V V
cla mp
= 400 V L= 7 mH
V
CC
= 12 V V
cla mp
= 300 V L= 7 mH
I
C
= 7 A I
B
= 70 mA
R
BE
= 47
V
BE
= 0
8
I
B
= 70 mA
I
B
= 100 mA
I
B
= 250 mA
I
B
= 70 mA
I
B
= 100 mA
I
B
= 250 mA
V
CE
= 10 V
300
2.5
V
A
400
1.6
1.8
1.8
2.2
2.4
2.5
T
j
= 125 C
T
j
= 125 C
o
o
Min.
Typ .
Max.
100
0.5
100
0.5
20
Un it
µA
mA
µA
mA
mA
V
V
V
V
V
V
V
V
CEO(sus )
Collector-Emitter
Sustaining Voltage
V
CE(sat )
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
DC Current G ain
Diode Forward Voltage
Functional Test
(see fig. 1)
t
s
t
f
INDUCTIVE LOAD
Storage Time
Fall T ime
(see fig. 3)
V
BE(s at)
h
FE
V
F
15
0.5
µs
µs
Pulsed: Pulse duration = 300
µs,
duty cycle 1.5 %
Safe Operating Area
DC Current Gain
2/8
BU931/BU931P/BU931PFI
Collector Emitter Saturation Voltage
Collector Emitter Saturation Voltage
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
Base Emitter Saturation Voltage
Switching Time Inductive Load
3/8
BU931/BU931P/BU931PFI
FIGURE 1:
Functional Test Circuit
FIGURE 2:
Functional Test Waveforms
FIGURE 3:
Switching Time Test Circuit
FIGURE 4:
Sustaining Voltage Test Circuit
4/8
BU931/BU931P/BU931PFI
TO-3 MECHANICAL DATA
mm
MIN.
A
B
C
D
E
G
N
P
R
U
V
11.00
0.97
1.50
8.32
19.00
10.70
16.50
25.00
4.00
38.50
30.00
TYP.
MAX.
13.10
1.15
1.65
8.92
20.00
11.10
17.20
26.00
4.09
39.30
30.30
MIN.
0.433
0.038
0.059
0.327
0.748
0.421
0.649
0.984
0.157
1.515
1.187
inch
TYP.
MAX.
0.516
0.045
0.065
0.351
0.787
0.437
0.677
1.023
0.161
1.547
1.193
DIM.
P
G
A
D
C
U
V
O
N
R
B
P003F
5/8
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