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BFR380F_13

Description
High linearity low noise driver amplifier
File Size641KB,10 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Download Datasheet View All

BFR380F_13 Overview

High linearity low noise driver amplifier

BFR380F
Linear Low Noise Silicon Bipolar RF Transistor
High linearity low noise driver amplifier
Output compression point 19.5 dBm @ 1.8 GHz
Ideal for oscillators up to 3.5 GHz
Low noise figure 1.1 dB at 1.8 GHz
Collector design supports 5 V supply voltage
Pb-free (RoHS compliant) and halogen-free thin
small flat package with visible leads
Qualification report according to AEC-Q101 available
3
1
2
ESD
(
E
lectro
s
tatic
d
ischarge) sensitive device, observe handling precaution!
Type
BFR380F
Parameter
Marking
FCs
Pin Configuration
1=B
2=E
Symbol
V
CEO
V
CES
V
CBO
V
EBO
I
C
I
B
P
tot
T
J
T
Stg
Symbol
R
thJS
3=C
Value
Package
TSFP-3
Unit
Maximum Ratings
at
T
A
= 25 °C, unless otherwise specified
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
1)
T
S
95°C
6
15
15
2
80
14
380
150
-55 ... 150
Value
V
mA
mW
°C
Junction temperature
Storage temperature
Thermal Resistance
Parameter
Unit
Junction - soldering point
2)
1
T
S
is
2
For
145
K/W
measured on the collector lead at the soldering point to the pcb
the definition of
R
thJS
please refer to Application Note AN077 (Thermal Resistance Calculation)
1
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