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1N5401GP-Z21D-B

Description
3 A, 100 V, SILICON, RECTIFIER DIODE, DO-27
CategoryDiscrete semiconductor    diode   
File Size176KB,4 Pages
ManufacturerUNISONIC TECHNOLOGIES CO.,LTD
Websitehttp://www.unisonic.com.tw/
Environmental Compliance
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1N5401GP-Z21D-B Overview

3 A, 100 V, SILICON, RECTIFIER DIODE, DO-27

1N5401GP-Z21D-B Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
package instructionO-XALF-W2
Reach Compliance Codecompliant
ECCN codeEAR99
Is SamacsysN
applicationGENERAL PURPOSE
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.2 V
JEDEC-95 codeDO-201AD
JESD-30 codeO-XALF-W2
Maximum non-repetitive peak forward current200 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature175 °C
Minimum operating temperature-65 °C
Maximum output current3 A
Package body materialUNSPECIFIED
Package shapeROUND
Package formLONG FORM
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum repetitive peak reverse voltage100 V
Maximum reverse current5 µA
surface mountNO
Terminal formWIRE
Terminal locationAXIAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
UNISONIC TECHNOLOGIES CO., LTD
1N5401G
GLASS PASSIVATED SILICON
RECTIFIER
DESCRIPTION
DIODE
1
The UTC
1N5401G
is a glass passivated silicon rectifier, it uses
UTC’s advanced technology to provide customers with high forward
surge current and low reverse leakage, etc.
FEATURES
2
DO-201AD
* Low reverse leakage
* High forward surge current capability
SYMBOL
ORDERING INFORMATION
Package
DO-201AD
Pin Assignment
1
2
K
A
Packing
Tape Box
Ordering Number
Lead Free
Halogen Free
1N5401GL-Z21D-B
1N5401GP-Z21D-B
Note: Pin Assignment: A: Anode
K: Cathode
MARKING
Cathode Band for uni-directional Only
5401G
L: Lead Free
P: Halogen Free
Date Code
www.unisonic.com.tw
Copyright © 2015 Unisonic Technologies Co., Ltd
1 of 4
QW-R601-215.C

1N5401GP-Z21D-B Related Products

1N5401GP-Z21D-B 1N5401G 1N5401GL-Z21D-B
Description 3 A, 100 V, SILICON, RECTIFIER DIODE, DO-27 3 A, 100 V, SILICON, RECTIFIER DIODE, DO-27 3 A, 100 V, SILICON, RECTIFIER DIODE, DO-27
Is it Rohs certified? conform to - conform to
package instruction O-XALF-W2 - LEAD FREE PACKAGE-2
Reach Compliance Code compliant - compli
ECCN code EAR99 - EAR99
application GENERAL PURPOSE - GENERAL PURPOSE
Shell connection ISOLATED - ISOLATED
Configuration SINGLE - SINGLE
Diode component materials SILICON - SILICON
Diode type RECTIFIER DIODE - RECTIFIER DIODE
Maximum forward voltage (VF) 1.2 V - 1.2 V
JEDEC-95 code DO-201AD - DO-201AD
JESD-30 code O-XALF-W2 - O-XALF-W2
Maximum non-repetitive peak forward current 200 A - 200 A
Number of components 1 - 1
Phase 1 - 1
Number of terminals 2 - 2
Maximum operating temperature 175 °C - 175 °C
Minimum operating temperature -65 °C - -65 °C
Maximum output current 3 A - 3 A
Package body material UNSPECIFIED - UNSPECIFIED
Package shape ROUND - ROUND
Package form LONG FORM - LONG FORM
Peak Reflow Temperature (Celsius) NOT SPECIFIED - NOT SPECIFIED
Maximum repetitive peak reverse voltage 100 V - 100 V
Maximum reverse current 5 µA - 5 µA
surface mount NO - NO
Terminal form WIRE - WIRE
Terminal location AXIAL - AXIAL
Maximum time at peak reflow temperature NOT SPECIFIED - NOT SPECIFIED
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