HWL23NPB
L-Band GaAS Power FET
Autumn 2002 V1
Features
•
•
•
•
Plastic Packaged GaAs Power FET
Suitable for Commercial Wireless
Applications
High Efficiency
3V to 6V Operation
Outline Dimensions
1
Pin 1: Source
Pin 2: Gate
Pin 3: Drain
Description
The HWL23NPB is a medium Power GaAs FET
using surface mount type plastic package for
various L-Band applications. It is suitable for
various 900 MHz, 1900 MHz cellular/wireless
applications.
2
3
Absolute Maximum Ratings
V
DS
V
GS
I
D
I
G
T
CH
T
STG
P
T
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Gate Current
Channel Temperature
Storage Temperature
Power Dissipation
+7V
-5V
I
DSS
1mA
150
°
C
-65 to +150
°
C
0.7 Watt
PB Package (SOT-23)
Electrical Specifications
(T
A
=25
°
C) f=1900 MHz for all RF Tests
Symbol
I
DSS
V
P
gm
R
th
P
1dB
Parameters & Conditions
Saturated Current at V
DS
=5V, V
GS
=0V
Pinch-off Voltage at V
DS
=5V, I
D
=5.5mA
Transconductance at V
DS
=5V, I
D
=55mA
Thermal Resistance
Power Output at Test Points
V
DS
=3V, I
D
=0.5I
DSS
V
DS
=5V, I
D
=0.5I
DSS
Gain at 1dB Compression Point
V
DS
=3V, I
D
=0.5I
DSS
V
DS
=5V, I
D
=0.5I
DSS
Power-Added Efficiency (P
OUT
= P
1dB
)
V
DS
=3V, I
D
=0.5I
DSS
V
DS
=5V, I
D
=0.5I
DSS
Units
mA
V
mS
°
C/W
dBm
Min.
90
-3.5
-
-
16.5
19.5
Typ.
110
-2.0
60
200
17.5
21.0
13.0
14.0
-
-
35.0
45.0
Max.
-
-1.5
-
-
-
-
-
-
-
-
G
1dB
dB
PAE
%
Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL 886-3-578-5100 FAX 886-3-577-0512
http://www.hw.com.tw
Email:
sales@hw.com.tw
All specifications are subject to change without notice.
HWL23NPB
L-Band GaAS Power FET
Autumn 2002 V1
Typical Performance at 25°C
°
Output Power & Efficiency vs Vds
@ f=0.9GHz,Ids=55mA
Po (dBm)
22
20
40
18
16
10
14
1
2
3
4
5
6
0
Vds (V)
30
20
Po
PAE
PAE (%)
60
50
Output Power & Efficiency vs Vds
@ f=1.9GHz,Ids=55mA
Po (dBm)
22
PAE (%)
60
50
20
40
18
30
20
16
10
14
1
2
3
4
5
6
0
Vds (V)
Po
PAE
Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL 886-3-578-5100 FAX 886-3-577-0512
http://www.hw.com.tw
Email:
sales@hw.com.tw
All specifications are subject to change without notice.
HWL23NPB
L-Band GaAS Power FET
Autumn 2002 V1
Output Power & Efficiency & Gain vs Input Power
@ f=0.9GHz, Vds=3V
Po (dBm)
20
PAE (%)
60
50
15
40
10
Gain
5
10
0
-8
-4
0
4
8
12
0
Pin (dBm)
30
20
Po
Gain
Eff
Output Power & Efficiency & Gain vs Input Power
@ f=1.9GHz, Vds=3V
Po (dBm)
20
PAE (%)
60
50
15
40
10
Gain
5
10
0
-8
-4
0
4
8
12
16
0
Pin (dBm)
30
20
Po
Gain
Eff
Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL 886-3-578-5100 FAX 886-3-577-0512
http://www.hw.com.tw
Email:
sales@hw.com.tw
All specifications are subject to change without notice.
HWL23NPB
L-Band GaAS Power FET
Autumn 2002 V1
Output Power & Efficiency & Gain vs Input Power
@ f=0.9GHz, Vds=5V
Po (dBm)
25
20
15
Gain
10
5
0
-8
-4
0
4
8
12
30
20
10
0
Pin (dBm)
PAE (%)
60
50
40
Po
Gain
Eff
Output Power & Efficiency & Gain vs Input Power
@ f=1.9GHz, Vds=5V
Po (dBm)
40
PAE (%)
70
60
30
50
40
20
Gain
10
30
20
10
0
-8
-4
0
4
8
12
16
0
Pin (dBm)
Po
Gain
Eff
Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL 886-3-578-5100 FAX 886-3-577-0512
http://www.hw.com.tw
Email:
sales@hw.com.tw
All specifications are subject to change without notice.
HWL23NPB
L-Band GaAS Power FET
Autumn 2002 V1
Output Power & Efficiency & Gain vs Frequency
@ Vds=3V, Ids=55mA
Po (dBm)
25
20
40
15
Gain
10
10
5
0.7
0.8
0.9
1.0
1.1
0
f (GHz)
30
20
PAE (%)
60
50
Po
Gain
PAE
Output Power & Efficiency & Gain vs Frequency
@ Vds=5V, Ids=55mA
Po (dBm)
25
20
PAE (%)
60
50
40
Po
Gain
PAE
15
Gain
10
30
20
10
5
1.6
1.7
1.8
1.9
2.0
0
2.1 f (GHz)
Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL 886-3-578-5100 FAX 886-3-577-0512
http://www.hw.com.tw
Email:
sales@hw.com.tw
All specifications are subject to change without notice.
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