UFMMT455 datasheet, PDF - EEWORLD Datasheet

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UFMMT455: DescriptionSmall Signal Bipolar Transistor, 1A I(C), 140V V(BR)CEO, 1-Element, NPN, Silicon; CategoryDiscrete semiconductor The transistor; File Size119KB，2 Pages; ManufacturerDiodes; Websitehttp://www.diodes.com/; Environmental Compliance

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UFMMT455 Overview

Small Signal Bipolar Transistor, 1A I(C), 140V V(BR)CEO, 1-Element, NPN, Silicon

UFMMT455 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Diodes
package instruction	SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code	compliant
ECCN code	EAR99
Maximum collector current (IC)	1 A
Collector-emitter maximum voltage	140 V
Configuration	SINGLE
Minimum DC current gain (hFE)	100
JESD-30 code	R-PDSO-G3
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	3
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	NPN
Certification status	Not Qualified
surface mount	YES
Terminal surface	Matte Tin (Sn)
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	40
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	100 MHz

UFMMT455 Preview

SOT23 NPN SILICON PLANAR

HIGH PERFORMANCE TRANSISTOR

ISSUE 3 FEBRUARY 1996

FEATURES

* 140 Volt V

CEO

* 1 Amp continuous current

* P

tot

= 500 mW

PARTMARKING DETAIL

455

FMMT455

C

B

E

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Peak Pulse Current

Continuous Collector Current

Base Current

Power Dissipation at T

amb

=25°C

Operating and Storage Temperature Range

SYMBOL

V

CBO

V

CEO

V

EBO

I

CM

I

C

I

B

P

tot

T

j

:T

stg

VALUE

160

140

5

2

1

200

500

-55 to +150

SOT23

UNIT

V

A

mA

mW

°C

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C).

PARAMETER

Collector-Base

Breakdown Voltage

Collector-Emitter

Sustaining Voltage

Emitter-Base

Breakdown Voltage

Collector Cut-Off Current

Emitter Cut-Off Current

Collector-Emitter

Saturation Voltage

Static Forward Current

Transfer Ratio

Transition

Frequency

Output Capacitance

SYMBOL

V

(BR)CBO

V

CEO(sus)

V

(BR)EBO

I

CBO

I

EBO

V

CE(sat)

h

FE

f

T

C

obo

100

10 Typ

100

15

MIN. MAX.

160

140

5

0.1

0.7

300

MHz

pF

UNIT

V

µ

A

µ

A

CONDITIONS.

I

C

=100

µ

A

I

C

=10mA*

I

E

=100

µ

A

V

CB

=140V

V

EB

=4V

I

C

=150mA, I

B

=15mA

I

C

=150mA, V

CE

=10V*

I

C

=1A, V

CE

=10V*

I

C

=50mA, V

CE

=10V

f=100MHz

V

CB

=10V, f=1MHz

V

* Measured under pulsed conditions. Pulse width=300

µ

s. Duty cycle

≤

2%

Spice parameter data is available upon request for this device

3 - 110

FMMT455

TYPICAL CHARACTERISTICS

tf

ns

900

tr

tf

800

ts

6

ts

µS

7

0.4

ns

500

I

B1

=I

B2

=I

C

/10

V

CE

=10V

5

- (Volts)

I

C

/I

B

=10

0.2

Switching time

0.3

400

700

tr

300

600

4

td

3

nS

100

2

200

500

V

0.1

100

400

td

1

50

0

300

0.01

0.1

1

0

0.001

0.01

0.1

1

I

+

-

Collector Current (Amps)

I

+

-

Collector Current (Amps)

V

CE(sat)

v I

C

Typical Switching Speeds

100

1.0

80

0.8

I

C

/I

B

=10

- Normalised Gain (%)

60

- (Volts)

V

CE

=10V

0.6

40

20

0.4

h

0.2

0.001

0.01

0.1

1

10

0.001

0.01

0.1

1

I

+

-

Collector Current (Amps)

I

+

-

Collector Current (Amps)

h

FE

v I

C

V

BE(sat)

v I

C

Single Pulse T

est at T

amb

=25°C

10

1.2

V

CE

=10V

1

- (Volts)

1.0

0.8

0.1

0.6

0.01

DC

1s

100ms

10ms

1ms

100

µ

s

V

0.4

0.0001

0.001

0.01

0.1

1

0.001

0.1

1

10

100

1000

I

+

-

Collector Current (Amps)

V

CE

- Collector Emitter Voltage (V)

V

BE(on)

v I

C

Safe Operating Area

3 - 111

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UFMMT455 Related Products

	UFMMT455
Description	Small Signal Bipolar Transistor, 1A I(C), 140V V(BR)CEO, 1-Element, NPN, Silicon
Is it Rohs certified?	conform to
Maker	Diodes
package instruction	SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code	compliant
ECCN code	EAR99
Maximum collector current (IC)	1 A
Collector-emitter maximum voltage	140 V
Configuration	SINGLE
Minimum DC current gain (hFE)	100
JESD-30 code	R-PDSO-G3
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	3
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	NPN
Certification status	Not Qualified
surface mount	YES
Terminal surface	Matte Tin (Sn)
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	40
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	100 MHz

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