This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si1012CR
Vishay Siliconix
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
V
DS
V
DS
/T
J
V
GS(th)
/T
J
V
GS(th)
I
GSS
I
DSS
I
D(on)
V
GS
= 0 V, I
D
= 250 µA
I
D
= 250 µA
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= 0 V, V
GS
= ± 8 V
V
DS
= 0 V, V
GS
= ± 4.5 V
V
DS
= 20 V, V
GS
= 0 V
V
DS
= 20 V, V
GS
= 0 V, T
J
= 85 °C
V
DS
=
5 V, V
GS
= 4.5 V
V
GS
= 4.5 V, I
D
= 0.6 A
Drain-Source On-State Resistance
a
R
DS(on)
V
GS
= 2.5 V, I
D
= 0.3 A
V
GS
= 1.8 V, I
D
= 0.3 A
V
GS
= 1.5 V, I
D
= 0.05 A
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Pulse Diode Forward Current
a
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
I
F
= 0.5 A, dI/dt = 100 A/µs
I
S
= 0.5 A
0.8
10
2
5
5
2
1.2
15
4
A
V
ns
nC
ns
b
Symbol
Test Conditions
Min.
20
Typ.
Max.
Unit
V
17
- 1.8
0.4
1
± 30
±1
1
10
2
0.330
0.380
0.420
0.720
7.5
43
0.396
0.456
0.546
1.100
mV/°C
V
µA
A
g
fs
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
V
DS
= 10 V, I
D
= 0.5 A
S
V
DS
= 10 V, V
GS
= 0 V, f = 1 MHz
V
DS
= 10 V, V
GS
= 8 V, I
D
= 0.6 A
V
DS
= 10 V, V
GS
= 4.5 V, I
D
= 0.6 A
f = 1 MHz
V
DD
= 10 V, R
L
= 20
I
D
0.5 A, V
GEN
= 4.5 V, R
g
= 1
2.4
14
8
1.3
0.75
0.15
0.13
12.2
11
16
26
11
24.4
20
24
39
20
2
1.2
pF
nC
ns
Notes:
a. Pulse test; pulse width
300 µs, duty cycle
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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For technical questions, contact:
pmostechsupport@vishay.com
Document Number: 67519
S13-0195-Rev. E, 28-Jan-13
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si1012CR
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
0.8
1.0E-04
1.0E-05
I
GSS
- Gate Current (mA)
0.6
I
GSS
- Gate Current (A)
T
J
= 150
°C
1.0E-06
T
J
= 25
°C
0.4
T
J
= 25
°C
1.0E-07
0.2
1.0E-08
0
0
2
6
8
10
V
GS
- Gate-Source Voltage (V)
4
12
14
1.0E-09
0
4
7
11
14
V
GS
- Gate-to-Source Voltage (V)
Gate Current vs. Gate-Source Voltage
Gate Current vs. Gate-Source Voltage
2
0.5
V
GS
= 5 V thru 2 V
1.5
0.4
I
D
- Drain Current (A)
I
D
- Drain Current (A)
0.3
V
GS
= 1.5 V
1
T
C
= 25
°C
0.2
0.5
0.1
T
C
= 125
°C
V
GS
= 1 V
0
0
0.5
1
1.5
2
V
DS
- Drain-to-Source Voltage (V)
0
0
0.3
0.6
0.9
1.2
1.5
T
C
= - 55
°C
V
GS
- Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
0.80
60
R
DS(on)
- On-Resistance (Ω)
V
GS
= 1.8 V
0.60
C - Capacitance (pF)
C
iss
45
30
C
oss
15
V
GS
= 2.5 V
0.40
V
GS
= 4.5 V
C
rss
0.20
0
0.5
1
1.5
I
D
- Drain Current (A)
2
0
0
10
15
V
DS
- Drain-to-Source Voltage (V)
5
20
On-Resistance vs. Drain Current
Capacitance
Document Number: 67519
S13-0195-Rev. E, 28-Jan-13
For technical questions, contact:
pmostechsupport@vishay.com
www.vishay.com
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si1012CR
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
8
R
DS(on)
- On-Resistance (Normalized)
I
D
= 0.6 A
1.6
I
D
= 0.5 A
1.4
V
GS
= 4.5 V
V
GS
- Gate-to-Source Voltage (V)
V
DS
= 5 V
6
V
DS
= 10 V
1.2
4
V
DS
= 16 V
2
1.0
0.8
V
GS
= 2.5 V
0
0
0.5
1
1.5
Q
g
- Total Gate Charge (nC)
0.6
- 50
- 25
0
25
50
75
100
125
150
T
J
- Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
10
0.8
I
D
= 0.5 A
R
DS(on)
- On-Resistance (Ω)
0.6
I
S
- Source Current (A)
T
J
= 150
°C
1
0.4
T
J
= 125 °C
T
J
= 25
°C
T
J
= 25
°C
0.2
0.1
0.0
0
0.3
0.6
0.9
1.2
V
SD
- Source-to-Drain Voltage (V)
1.5
0
1
2
3
4
V
GS
- Gate-to-Source Voltage (V)
5
Soure-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.75
3
I
D
= 250 μA
2.4
0.65
0.55
Power (W)
V
GS(th)
(V)
1.8
1.2
0.45
0.6
0.35
- 50
- 25
0
25
50
75
100
125
150
0
0.01
0.1
T
J
- Temperature (°C)
1
Time (s)
10
100
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
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For technical questions, contact:
pmostechsupport@vishay.com
Document Number: 67519
S13-0195-Rev. E, 28-Jan-13
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si1012CR
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
10
0.24
Limited by R
DS(on)
*
I
D
- Drain Current (A)
BVDSS Limited
0.18
1
1 ms
10 ms
0.1
100 ms
T
C
= 25
°C
Single Pulse
0.06
Power (W)
0.12
0.01
0.1
1s
10 s, DC
0
0
25
50
75
100
125
T
A
- Ambient Temperature (°C)
150
1
10
100
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specified
Safe Operating Area, Junction-to-Ambient
Power Derating, Junction-to-Ambient
* The power dissipation P
D
is based on T
J(max.)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see
www.vishay.com/ppg?67519.
Document Number: 67519
S13-0195-Rev. E, 28-Jan-13
For technical questions, contact:
pmostechsupport@vishay.com
www.vishay.com
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
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