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BAT54SWTP

Description
DIODE 0.2 A, 2 ELEMENT, SILICON, SIGNAL DIODE, PLASTIC PACKAGE-3, Signal Diode
CategoryDiscrete semiconductor    diode   
File Size375KB,3 Pages
ManufacturerMicro Commercial Components (MCC)
Environmental Compliance
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BAT54SWTP Overview

DIODE 0.2 A, 2 ELEMENT, SILICON, SIGNAL DIODE, PLASTIC PACKAGE-3, Signal Diode

BAT54SWTP Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerMicro Commercial Components (MCC)
package instructionPLASTIC PACKAGE-3
Contacts3
Reach Compliance Codeunknown
MCC
Micro Commercial Components
TM
  omponents
20736 Marilla
Street Chatsworth

  !"#
$ %    !"#
BAT54WT
thru
BAT54SWT
200mWatt, 30Volt
Schottky Barrier Diode
SOT-323
A
D
Features
Low Forward Voltage
Surface Mount SOT-323 Package
Capable of 200mWatts of Power Dissipation
Case Material: Molded Plastic.
Classification Rating 94V-0
Part
Number
BAT54WT
BAT54AWT
BAT54CWT
BAT54SWT
Device
Marking
KL5
KL6
KL7
KL8
UL Flammability
Type
Single
Dual
Dual
Dual
Pin
Configuration
Figure 1
Figure 2
Figure 3
Figure 4
F
B
C
Maximum Ratings
Continuous Reverse Voltage
Forward Current
Repetitive Peak Forward Current
Non-Repetitive Peak Forward Current t<1s
Total Power Dissipation @ T
A
= 25°C
Storage Temperature Range
Junction Temperature
V
R
I
F
I
FRM
I
FSM
P
D
T
stg
T
j
30V
200mA
300mA
600mA
200mW
-55°C to 150°C
150°C
G
E
H
J
K
DIMENSIONS
INCHES
MIN
MAX
.071
.087
.045
.053
.079
.087
.026 Nominal
.047
.055
.012
.016
.000
.004
.035
.039
.004
.010
.012
.016
MM
MIN
MAX
1.80
2.20
1.15
1.35
2.00
2.20
0.65Nominal
1.20
1.40
.30
.40
.000
.100
.90
1.00
.100
.250
.30
.40
Electrical Characteristics @ 25
°C
Unless Otherwise Specified
Ratings
Forward Voltage at
I
F
= 0.1mA
I
F
= 1mA
I
F
= 10mA
I
F
= 30mA
I
F
= 100mA
Reverse Current
Reverse Breakdown
Voltage
Capacitance
Reverse Recovery
Time
Thermal Resistance,
Junction to Ambient
Symbol
Max.
240mV
320mV
400mV
500mV
1000mV
2 uA
>30V
10pF
5nS
500K/W
Notes
V
F
DIM
A
B
C
D
E
F
G
H
J
K
NOTE
Suggested Solder
Pad Layout
0.70
I
R
V
(BR)
C
J
t
rr
R
θJA
V
R
= 25V
0.90
Measured at
1.0MHz, V
R
=1.0V
I
F
=I
R
=10mA;
I
(REC)
= 1mA
0.65
0.65
1.90
www.mccsemi.com
Revision: 3
1 of 3
2006/05/13

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Description DIODE 0.2 A, 2 ELEMENT, SILICON, SIGNAL DIODE, PLASTIC PACKAGE-3, Signal Diode Rectifier Diode, Schottky, 2 Element, 0.2A, Silicon, PLASTIC PACKAGE-3 DIODE 0.2 A, 2 ELEMENT, SILICON, SIGNAL DIODE, PLASTIC PACKAGE-3, Signal Diode Rectifier Diode, Schottky, 2 Element, 0.2A, Silicon, PLASTIC PACKAGE-3 Fixed Resistor, Thin Film, 0.2W, 264ohm, 100V, 5% +/-Tol, -100,100ppm/Cel, 0805, Rectifier Diode, Schottky, 2 Element, 0.2A, Silicon, PLASTIC PACKAGE-3 DIODE 0.2 A, 2 ELEMENT, SILICON, SIGNAL DIODE, PLASTIC PACKAGE-3, Signal Diode
Is it Rohs certified? conform to incompatible conform to incompatible incompatible incompatible conform to
Reach Compliance Code unknown compliant unknown compliant not_compliant compliant unknown
Is it lead-free? Lead free Contains lead Lead free Contains lead - Contains lead Lead free
package instruction PLASTIC PACKAGE-3 R-PDSO-G3 PLASTIC PACKAGE-3 R-PDSO-G3 - R-PDSO-G3 PLASTIC PACKAGE-3
Contacts 3 3 3 3 - 3 3
ECCN code - EAR99 - EAR99 EAR99 EAR99 -
JESD-609 code - e0 - e0 e0 e0 -
Number of terminals - 3 - 3 2 3 -
Package form - SMALL OUTLINE - SMALL OUTLINE SMT SMALL OUTLINE -
technology - SCHOTTKY - SCHOTTKY THIN FILM SCHOTTKY -
Terminal surface - TIN LEAD - TIN LEAD Tin/Lead (Sn/Pb) - with Nickel (Ni) barrier TIN LEAD -
Base Number Matches - 1 1 1 - 1 -
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