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Datasheet> All Categories > Discrete semiconductor> The transistor> UP04217G
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UP04217G

Description
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon, ROHS COMPLIANT, SSMINI6-F2, 6 PIN
CategoryDiscrete semiconductor    The transistor   
File Size237KB，3 Pages
ManufacturerPanasonic
Websitehttp://www.panasonic.co.jp/semicon/e-index.html
Environmental Compliance
Download Datasheet Parametric View All

UP04217G Overview

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon, ROHS COMPLIANT, SSMINI6-F2, 6 PIN

UP04217G Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerPanasonic
package instructionSMALL OUTLINE, R-PDSO-F6
Contacts6
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresBUILT IN BIAS RESISTOR
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage50 V
ConfigurationSEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)160
JESD-30 codeR-PDSO-F6
JESD-609 codee6
Humidity sensitivity level1
Number of components2
Number of terminals6
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin/Bismuth (Sn/Bi)
Terminal formFLAT
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)150 MHz

UP04217G Preview

This product complies with the RoHS Directive (EU 2002/95/EC).
Composite Transistors
UP04217
Silicon NPN epitaxial planar type
Unit: mm
For switching/digital circuits
■
Features
(0.30)
6
5
4
0.20
+0.05
–0.02
0.10
±0.02
1.20
±0.05
1.60
±0.05
M
ain
Di
sc te
on na
tin nc
ue e/
d
•
Two elements incorporated into one package
(Transistors with built-in resistor)
•
Reduction of the mounting area and assembly cost by one half
1
2
3
(0.50)(0.50)
1.00
±0.05
1.60
±0.05
Display at No.1 lead
5˚
Parameter
Symbol
V
CBO
V
CEO
I
C
P
T
T
j
Rating
50
50
Unit
V
V
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector current
1: Emitter (Tr1)
2: Base (Tr1)
3: Collector (Tr2)
0 to 0.02
■
Absolute Maximum Ratings
T
a
=
25°C
4: Emitter (Tr2)
5: Base (Tr2)
6: Collector (Tr1)
SSMini6-F1 Package
100
125
125
mA
°C
Total power dissipation
Junction temperature
Storage temperature
mW
°C
Marking Symbol: BS
Internal Connection
6
T
stg
−55
to
+125
5
4
Tr1
Tr2
on
Parameter
tin
Symbol
V
CBO
V
CEO
I
CBO
I
CEO
I
EBO
h
FE
ue
■
Electrical Characteristics
T
a
=
25°C
±
3°C
1
2
3
Conditions
Min
50
Typ
Max
Unit
V
isc
Collector-base voltage (Emitter open)
I
C
=
10
µA,
I
E
=
0
I
C
=
2 mA, I
B
=
0
/D
Collector-emitter voltage (Base open)
50
V
Collector-base cutoff current (Emitter open)
ce
V
CB
=
50 V, I
E
=
0
V
CE
=
50 V, I
B
=
0
V
EB
=
6 V, I
C
=
0
0.1
0.5
µA
µA
V
V
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Output voltage high-level
Output voltage low-level
Input resistance
Transition frequency
Ma
int
en
Collector-emitter cutoff current (Base open)
an
0.01
460
mA
V
CE
=
10 V, I
C
=
5 mA
160
V
CE(sat)
V
OH
V
OL
R
1
f
T
I
C
=
10 mA, I
B
=
0.3 mA
0.25
V
CC
=
5 V, V
B
=
0.5 V, R
L
=
1 kΩ
V
CC
=
5 V, V
B
=
2.5 V, R
L
=
1 kΩ
4.9
0.2
−30%
22
150
+30%
V
kΩ
MHz
V
CB
=
10 V, I
E
= −2
mA, f
=
200 MHz
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Note) The part number in the parenthesis shows conventional part number.
Publication date: January 2004
SJJ00284AED
0.10 max.
•
UNR2217 (UN2217)
×
2
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5˚
0.55
±0.05
■
Basic Part Number
(0.20)
(0.20)
1
This product complies with the RoHS Directive (EU 2002/95/EC).
UP04217
P
T
T
a
140
120
140
120
0.9
mA
I
C
V
CE
I
B
=
1.0 mA
V
CE(sat)
I
C
Collector-emitter saturation voltage V
CE(sat)
(V)
1
Total power dissipation P
T
(mW)
Collector current
I
C
(mA)
100
80
60
40
20
0
100
80
60
40
20
0
0.8
mA
0.7
mA
0.6
mA
0.5
mA
0.4
mA
0.3
mA
I
C
/ I
B
=
10
0.2
mA
0.1
M
ain
Di
sc te
on na
tin nc
ue e/
d
0.1
mA
T
a
=
25°C
10
T
a
= 85°C
−25°C
25°C
0
20
40
60
80
100 120 140
Ambient temperature T
a
(
°
C)
h
FE
I
C
Collector output capacitance
C (pF)
(Common base, input open circuited)
ob
500
450
400
350
300
250
200
150
100
50
0
V
CE
=
10 V
T
a
= 85°C
25°C
−25°C
ue
1
10
100
1 000
Input voltage V
IN
(V)
10
1
0.1
1
10
100
Output current I
O
(mA)
2
Ma
int
en
an
ce
100
V
O
=
0.2 V
T
a
=
25°C
/D
V
IN
I
O
isc
on
tin
Collector current I
C
(mA)
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.
0
2
4
6
8
12
0.01
0.1
1
10
100
Collector-emitter voltage
V
CE
(V)
Collector current I
C
(mA)
C
ob
V
CB
I
O
V
IN
10
f
=
1 MHz
T
a
=
25°C
100
V
O
=
5 V
T
a
=
25°C
Forward current transfer ratio h
FE
Output current I
O
(mA)
10
1
1
0
10
20
30
40
0
1
2
3
4
5
6
Collector-base voltage
V
CB
(V)
Input voltage V
IN
(V)
SJJ00284AED
Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1)
If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
regulations of the exporting country, especially, those with regard to security export control, must be observed.
(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples
of the products, and no license is granted under any intellectual property right or other right owned by our company or any other
company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other
company which may arise as a result of the use of technical information described in this book.
(3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office
equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
–
Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support
systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the prod-
ucts may directly jeopardize life or harm the human body.
–
Any applications other than the standard applications intended.
(4) The products and product specifications described in this book are subject to change without notice for modification and/or im-
provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product
Standards in advance to make sure that the latest specifications satisfy your requirements.
(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute
maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any
defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which
damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages.
(7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita
Electric Industrial Co., Ltd.
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