UNISONIC TECHNOLOGIES CO., LTD
UTT30P06
60V, 30A P-CHANNEL
POWER MOSFET
DESCRIPTION
Power MOSFET
The UTC
UTT30P06
is a P-channel power MOSFET using UTC’s
advanced technology to provide the customers with high switching
speed and a minimum on-state resistance. It can also withstand high
energy in the avalanche.
The UTC
UTT30P06
is suitable for low voltage and high speed
switching applications
FEATURES
* R
DS(ON)
< 0.08Ω @ V
GS
= -10V, I
D
= -15A
* High Switching Speed
SYMBOL
ORDERING INFORMATION
Package
TO-220
TO-251
TO-252
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
Packing
Tube
Tube
Tape Reel
Ordering Number
Lead Free
Halogen Free
UTT30P06L-TA3-T
UTT30P06G-TA3-T
UTT30P06L-TM3-T
UTT30P06G-TM3-T
UTT30P06L-TN3-R
UTT30P06G-TN3-R
Note: Pin Assignment: G: Gate
D: Drain
S: Source
MARKING
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., Ltd
1 of 4
QW-R502-622.D
UTT30P06
Power MOSFET
ABSOLUTE MAXIMUM RATINGS
(T
C
=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
V
DSS
-60
V
Drain-Gate Voltage (R
GS
=1.0 MΩ)
V
DGR
-60
V
Continuous
V
GSS
±15
V
Gate-Source Voltage
Non−repetitive (t
p
≤10ms)
V
GSM
±25
V
T
C
=25°C
I
D
-30
A
Continuous
Drain Current
T
C
=100°C
I
D
-19
A
Pulsed (t
p
≤10μs)
I
DM
-105
A
104
W
TO-220
Power Dissipation
TO-251/TO-252
39
W
P
D
TO-220
0.83
W/°C
Derate Above 25°C
TO-251/TO-252
0.3125
W/°C
Junction Temperature
T
J
+175
°C
Storage Temperature
T
STG
-55~+175
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. When surface mounted to an FR4 board using the minimum recommended pad size.
THERMAL DATA
SYMBOL
θ
JA
θ
JC
RATINGS
62.5
110
1.2
3.2
UNIT
°C/W
°C/W
°C/W
°C/W
PARAMETER
TO-220
Junction to Ambient
TO-251/TO-252
TO-220
Junction to Case
TO-251/TO-252
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-622.D
UTT30P06
ELECTRICAL CHARACTERISTICS
(T
J
=25°C, unless otherwise specified)
SYMBOL
BV
DSS
I
DSS
I
GSS
V
GS(TH)
R
DS(ON)
V
DS(ON)
C
ISS
C
OSS
C
RSS
TEST CONDITIONS
I
D
=-0.25mA, V
GS
=0V
V
DS
=-60V, V
GS
=0V
V
GS
=+15V, V
DS
=0V
V
GS
=-15V, V
DS
=0V
V
DS
=V
GS
, I
D
=-250µA
V
GS
=-10V, I
D
=-15A
V
GS
=-10V, I
D
=-30A
V
GS
=-10V, I
D
=-15A, T
J
=150°C
MIN
-60
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Forward
Gate- Source Leakage
Current
Reverse
ON CHARACTERISTICS
(Note 1)
Gate Threshold Voltage
Static Drain-Source On-State Resistance
Drain-Source On-Voltage
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING PARAMETERS
(Note 2)
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall-Time
Power MOSFET
TYP
MAX
UNIT
V
µA
nA
nA
V
Ω
V
V
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
µC
-10
+100
-100
-1.2
0.027
-2.0
-2.4
0.08
-2.9
-2.8
2190
730
310
80
90
600
190
300
V
GS
=0V, V
DS
=-25V, f=1.0MHz
1320
260
190
60
70
535
170
260
35
5
-2.3
175
0.965
t
D(ON)
t
R
V
GS
=-10V, V
DD
=-30V,
I
D
=-1A, R
G
=9.1Ω
t
D(OFF)
t
F
Q
G
V
GS
=-10V, V
DS
=-48V, I
D
=-30A
Gate Charge
Q
GS
Q
GD
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
V
SD
I
S
=-30A, V
GS
=0V
Body Diode Reverse Recovery Time
t
RR
I
S
=-30A, V
GS
=0V,
dI
S
/dt=-100A/µs
Body Diode Reverse Recovery Charge
Q
RR
Notes: 1. Pulse Test: Pulse Width≤300μs, Duty Cycle≤2%.
2. Switching characteristics are independent of operating junction temperature.
-3.0
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-622.D
UTT30P06
TYPICAL CHARACTERISTICS
Power MOSFET
Drain Current, -I
D
(µA)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
Drain-Source Diode Forward
Current, -I
SD
(A)
Drain Current, -I
D
(A)
Drain Current, -I
D
(µA)
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QW-R502-622.D
Microcontroller MCU
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