UNISONIC TECHNOLOGIES CO., LTD
UTT75N03
75A, 30V, N-CHANNEL
ENHANCEMENT MODE
POWER MOSFET
DESCRIPTION
POWER MOSFET
The UTC
UTT75N03
is an N-channel enhancement mode
Power MOSFET, it uses UTC’s advanced technology to provide the
customers with high switching and a minimum on-state resistance.
The UTC
UTT75N03
is suitable for low voltage applications
such as DC/DC converters.
FEATURES
* R
DS(ON)
<4mΩ @ V
GS
=10V, I
D
=40A
R
DS(ON)
<7mΩ @ V
GS
=4.5V, I
D
=30A
* Low on-resistance
SYMBOL
ORDERING INFORMATION
Package
TO-252
TO-252D
Pin Assignment
1
2
3
G
D
S
G
D
S
Packing
Tape Reel
Tape Reel
Ordering Number
Lead Free
Halogen Free
UTT75N03L-TN3-R
UTT75N03G-TN3-R
UTT75N03L-TND-R
UTT75N03G-TND-R
Note: Pin Assignment: G: Gate
D: Drain S: Source
MARKING
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UTT75N03
ABSOLUTE MAXIMUM RATING
POWER MOSFET
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
V
DSS
30
V
Gate-Source Voltage
V
GSS
±20
V
V
GS
=10V, T
C
=25°C
75
A
I
D
Continuous (Note 4)
Drain Current
V
GS
=10V, T
C
=100°C
56
A
Pulsed (Note 1)
I
DM
300
A
T
C
=25°C
50
W
Total Power Dissipation
P
D
T
A
=25°C
2
W
Operating Junction Temperature Range
T
J
-55~+150
°C
Storage Temperature Range
T
STG
-55~+150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL RESISTANCE
SYMBOL
θ
JA
θ
JC
RATINGS
62.5
2.5
UNIT
°C/W
°C/W
PARAMETER
Junction to Ambient (PCB Mount) (Note 3)
Junction to Case
ELECTRICAL CHARACTERISTICS
(T
J
=25°C, unless otherwise specified)
MIN
30
10
+100
-100
4
7
3
3900
640
510
1.5
78
140
1100
530
1.2
TYP
MAX UNIT
V
µA
nA
nA
mΩ
mΩ
V
pF
pF
pF
Ω
ns
ns
ns
ns
V
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
I
D
=250µA, V
GS
=0V
Drain-Source Leakage Current
I
DSS
V
DS
=30V, V
GS
=0V
Forward
V
GS
=20V, V
DS
=0V
Gate-Source Leakage Current
I
GSS
Reverse
V
GS
=-20V, V
DS
=0V
ON CHARACTERISTICS
V
GS
=10V, I
D
=40A
Static Drain-Source On-State Resistance
R
DS(ON)
(Note 2)
V
GS
=4.5V, I
D
=30A
Gate Threshold Voltage
V
GS(TH)
V
DS
=V
GS
, I
D
=250µA
DYNAMIC PARAMETERS
Input Capacitance
C
ISS
Output Capacitance
C
OSS
V
GS
=0V, V
DS
=25V, f=1.0MHz
Reverse Transfer Capacitance
C
RSS
Gate Resistance
R
G
f=1.0MHz
SWITCHING PARAMETERS
Turn-ON Delay Time (Note 2)
t
D(ON)
Rise Time
t
R
V
DS
=15V, I
D
=0.25A, R
G
=25Ω
V
GS
=10V
Turn-OFF Delay Time
t
D(OFF)
Fall Time
t
F
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Forward On Voltage (Note 2)
V
SD
I
S
=40A, V
GS
=0V
Notes: 1. Pulse width limited by max. junction temperature
2. Pulse test
3. Surface mounted on 1 in
2
copper pad of FR4 board
4. Package limitation current is 75A
1
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QW-R205-046.B
UTT75N03
POWER MOSFET
TEST CIRCUITS AND WAVEFORMS
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QW-R205-046.B
UTT75N03
POWER MOSFET
TYPICAL CHARACTERISTICS
Drain Current, I
D
(µA)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
Continuous Drain-Source Current, I
SD
(A)
Drain Current, I
D
(A)
Drain Current, I
D
(µA)
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QW-R205-046.B
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