UNISONIC TECHNOLOGIES CO., LTD
QS8M11
Preliminary
Power MOSFET
DUAL ENHANCEMENT MODE
(N-CHANNEL/P-CHANNEL)
DESCRIPTION
The UTC
QS8M11
uses UTC’s advanced technology to provide
the customers with low voltage drive, etc.
The UTC
QS8M11
is suitable for switching.
SOP-8
FEATURES
* N-Channel: 30V, 3.5A
R
DS(ON)
< 50mΩ
@
V
GS
=10V
R
DS(ON)
< 65mΩ
@
V
GS
= 4.5V
R
DS(ON)
< 70mΩ
@
V
GS
= 4.0V
* P-Channel: -30V, -3.0A
R
DS(ON)
< 75mΩ
@
V
GS
= -10V
R
DS(ON)
< 115mΩ
@
V
GS
= -4.5V
R
DS(ON)
< 125mΩ
@
V
GS
= -4.0V
* Low voltage drive (4V drive)
* Low on-resistance
SYMBOL
(7)(8)
D1
(5)(6)
D2
(2)
G1
(4)
G2
S1
N-Channel (1)
S2
P-Channel (3)
ORDERING INFORMATION
Ordering Number
Package
Lead Free
Halogen Free
QS8M11L-S08-T
QS8M11G-S08-T
SOP-8
QS8M11L-S08-R
QS8M11G-S08-R
SOP-8
Note: Pin Assignment: G: Gate
D: Drain
S: Source
Pin Assignment
Packing
1 2 3 4 5 6 7 8
S1 G1 S2 G2 D2 D2 D1 D1
Tube
S1 G1 S2 G2 D2 D2 D1 D1 Tape Reel
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Copyright © 2014 Unisonic Technologies Co., Ltd
1 of 6
QW-R502-B29.a
QS8M11
MARKING
Preliminary
Power MOSFET
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 6
QW-R502-B29.a
QS8M11
N-Channel
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Power Dissipation
Junction Temperature
Storage Temperature
P-Channel
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS
(T
A
=25°C, unless otherwise specified)
SYMBOL
V
DSS
V
GSS
I
D
I
DM
P
D
T
J
T
STG
RATINGS
30
±20
3.5
12
2
+150
-55 ~ +150
UNIT
V
V
A
A
W
°C
°C
T
C
=25°C
T
C
=25°C
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
V
DSS
-30
V
Gate-Source Voltage
V
GSS
±20
V
Continuous Drain Current
T
C
=25°C
I
D
-3.0
A
Pulsed Drain Current
T
C
=25°C
I
DM
-12
A
Power Dissipation
P
D
2
W
Junction Temperature
T
J
+150
°C
Storage Temperature
T
STG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. P
W
≤
10μs, Duty cycle
≤
1%, Mounted on a ceramic board.
ELECTRICAL CHARACTERISTICS
(T
A
=25°C, unless otherwise specified)
N-CHANNEL
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
ON CHARACTERISTICS
Gate Threshold Voltage
Drain-Source On-State Resistance (Note2)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-ON Delay Time (Note2)
Turn-ON Rise Time
Turn-OFF Delay Time
Turn-OFF Fall Time
Total Gate Charge (Note2)
Gate-Source Charge
Gate-Drain Charge
SOURCE TO DRAIN DIODE SPECIFICATIONS
Source to Drain Diode Voltage (Note 2)
Maximum Continuous Drain-Source Diode
Forward Current
Maximum Pulsed Drain-Source Diode Forward
Current
SYMBOL
BV
DSS
I
DSS
I
GSS
V
GS(TH)
R
DS(ON)
TEST CONDITIONS
I
D
=1mA, V
GS
=0V
V
DS
=30V, V
GS
=0V
V
DS
=0V, V
GS
=±20V
V
DS
=10V, I
D
=1mA
V
GS
=10V, I
D
=3.5A
V
GS
=4.5V, I
D
=3.5A
V
GS
=4.0V, I
D
=3.5A
V
GS
=0V, V
DS
=10V,
f=1.0MHz
MIN
30
1
±10
1.0
35
45
50
180
70
35
10
25
25
7
3.5
1
1
1.2
1.0
12
2.5
50
65
70
TYP MAX UNIT
V
µA
uA
V
mΩ
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
A
A
3 of 6
QW-R502-B29.a
C
ISS
C
OSS
C
RSS
t
D(ON)
t
R
t
D(OFF)
t
F
Q
G
Q
GS
Q
GD
V
SD
I
S
I
SM
V
DD
≈15V,
V
GS
=10V,
I
D
=1.7A, R
G
=10Ω,
R
L
=8.8Ω
V
GS
=5V, V
DD
≈15V,
I
D
=3.5A
I
S
=3.5A, V
GS
=0V
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
QS8M11
P-CHANNEL
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
ON CHARACTERISTICS
Gate Threshold Voltage
Drain-Source On-State Resistance (Note2)
Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS(Cont.)
SYMBOL
BV
DSS
I
DSS
I
GSS
V
GS(TH)
R
DS(ON)
TEST CONDITIONS
I
D
=-1mA, V
GS
=0V
V
DS
=-30V, V
GS
=0V
V
DS
=0V, V
GS
=±20V
V
DS
=-10V, I
D
=-1mA
V
GS
=-10V, I
D
=-3.5A
V
GS
=-4.5V, I
D
=-1.5A
V
GS
=-4.0V, I
D
=-1.5A
MIN
-30
-1
±10
-1.0
55
85
95
480
70
70
7
18
50
35
5.2
1.6
1.6
-1.2
-1.0
-12
-2.5
75
115
125
TYP MAX UNIT
V
µA
µA
V
mΩ
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
A
A
DYNAMIC CHARACTERISTICS
Input Capacitance
C
ISS
V
GS
=0V, V
DS
=-10V,
Output Capacitance
C
OSS
f=1.0MHz
Reverse Transfer Capacitance
C
RSS
SWITCHING CHARACTERISTICS
Turn-ON Delay Time (Note2)
t
D(ON)
V
DD
≈-15V,
V
GS
=-10V,
Turn-ON Rise Time
t
R
I
D
=-1.5A, R
G
=10Ω,
Turn-OFF Delay Time
t
D(OFF)
R
L
=10Ω
Turn-OFF Fall Time
t
F
Total Gate Charge (Note2)
Q
G
V
GS
=-5V, V
DD
≈-15V,
Gate-Source Charge
Q
GS
I
D
=-3A
Gate-Drain Charge
Q
GD
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage(Note2)
V
SD
I
S
=-3A, V
GS
=0V
Continuous Drain-Source Diode Forward Current
I
S
Pulsed Drain-Source Diode Forward Current
I
SM
Notes: 1. Pulse width limited by T
J(MAX)
2. Pulse width
≤
300us, duty cycle
≤
2%.
3. Surface Mounted on 1in
2
pad area, t
≤
10 sec.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
4 of 6
QW-R502-B29.a
QS8M11
N-CHANNEL
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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