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BZX55-C6V8-35T/B

Description
Zener Diode,
CategoryDiscrete semiconductor    diode   
File Size56KB,3 Pages
ManufacturerCheng-Yi Electronic Co., Ltd.
Download Datasheet Parametric View All

BZX55-C6V8-35T/B Overview

Zener Diode,

BZX55-C6V8-35T/B Parametric

Parameter NameAttribute value
MakerCheng-Yi Electronic Co., Ltd.
Reach Compliance Codeunknown
ECCN codeEAR99
BZX55-C2V4 SERIES
PB FREE PRODUCT
AXIAL LEAD ZENER DIODES
VOLTAGE
2.4 to 47 Volts
POWER
500 mWatts
DO-35
Unit: inch (mm)
FEATURES
• 500mW Power Dissipation
• Ideally Suited for Automated Assembly Processes
1.02(26.0)MIN.
• Planar Die construction
.020(0.52)TYP.
MECHANICAL DATA
• Case: Molded Glass DO-35
• Terminals: Solderable per MIL-STD-202E, Method 208
• Polarity: See Diagram Below
• Approx. Weight: 0.012 grams
• Mounting Position: Any
• Ordering information
Suffix : “ -35 ” to order DO-35 Package
• Packing information
B
- 2K per Bulk box
1.02(26.0)MIN.
.079(2.0)MAX.
T/R - 10K per 13" plastic Reel
T/B - 5K per horiz. tape & Ammo box
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Parameter
Power Dissipation at Tamb = 25
Junction Temperature
Storage Temperature Range
Valid provided that leads at a distance of 8mm from case are kept at ambient temperature.
O
Symbol
.165(4.2)MAX.
Value
500
175
-65 to +175
Units
mW
O
C
P
TOT
T
J
T
S
C
C
O
Parameter
Thermal Resi stance Juncti on to Ambi ent Ai r
Forward Voltage at IF = 100mA
Symbol
Mi n.
--
--
Typ.
Max.
0.3
1
Uni ts
K/mW
V
RthA
VF
--
--
Vali d provi ded that leads at a di stance of 10 mm from case are kept at ambi ent temperature.
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