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BYX64-600

Description
30A, 600V, SILICON, RECTIFIER DIODE
CategoryDiscrete semiconductor    diode   
File Size35KB,1 Pages
ManufacturerSTMicroelectronics
Websitehttp://www.st.com/
Download Datasheet Parametric View All

BYX64-600 Overview

30A, 600V, SILICON, RECTIFIER DIODE

BYX64-600 Parametric

Parameter NameAttribute value
MakerSTMicroelectronics
package instructionO-MUPM-D1
Reach Compliance Codecompliant
ECCN codeEAR99
applicationFAST RECOVERY
Shell connectionCATHODE
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.4 V
JESD-30 codeO-MUPM-D1
Maximum non-repetitive peak forward current300 A
Number of components1
Phase1
Number of terminals1
Maximum operating temperature150 °C
Minimum operating temperature-65 °C
Maximum output current30 A
Package body materialMETAL
Package shapeROUND
Package formPOST/STUD MOUNT
Maximum power dissipation50 W
Certification statusNot Qualified
Maximum repetitive peak reverse voltage600 V
Maximum reverse current50 µA
Maximum reverse recovery time0.2 µs
surface mountNO
Terminal formSOLDER LUG
Terminal locationUPPER
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