AP9A108-12VI datasheet, PDF - EEWORLD Datasheet

AP9A108-12VI: DescriptionCache SRAM, 128KX8, 12ns, CMOS, PDSO32; Categorystorage storage; File Size320KB，10 Pages; ManufacturerIntegrated Silicon Solution ( ISSI )

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AP9A108-12VI Overview

Cache SRAM, 128KX8, 12ns, CMOS, PDSO32

Parameter Name	Attribute value
Maker	Integrated Silicon Solution ( ISSI )
package instruction	,
Reach Compliance Code	unknown
ECCN code	3A991.B.2.B
Maximum access time	12 ns
JESD-30 code	R-PDSO-J32
memory density	1048576 bit
Memory IC Type	CACHE SRAM
memory width	8
Number of functions	1
Number of terminals	32
word count	131072 words
character code	128000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature	-40 °C
organize	128KX8
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Parallel/Serial	PARALLEL
Certification status	Not Qualified
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	YES
technology	CMOS
Temperature level	INDUSTRIAL
Terminal form	J BEND
Terminal location	DUAL

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