Transistor,
| Parameter Name | Attribute value |
| Is it Rohs certified? | incompatible |
| Maker | Philips Semiconductors (NXP Semiconductors N.V.) |
| package instruction | , |
| Reach Compliance Code | unknown |
| Maximum collector current (IC) | 12 A |
| Configuration | Single |
| Minimum DC current gain (hFE) | 38 |
| JESD-609 code | e0 |
| Maximum operating temperature | 150 °C |
| Polarity/channel type | NPN |
| Maximum power dissipation(Abs) | 18 W |
| surface mount | NO |
| Terminal surface | Tin/Lead (Sn/Pb) |

| BUV27AF | BUV27F | |
|---|---|---|
| Description | Transistor, | Transistor, |
| Is it Rohs certified? | incompatible | incompatible |
| Maker | Philips Semiconductors (NXP Semiconductors N.V.) | Philips Semiconductors (NXP Semiconductors N.V.) |
| Reach Compliance Code | unknown | unknown |
| Maximum collector current (IC) | 12 A | 12 A |
| Configuration | Single | Single |
| Minimum DC current gain (hFE) | 38 | 38 |
| JESD-609 code | e0 | e0 |
| Maximum operating temperature | 150 °C | 150 °C |
| Polarity/channel type | NPN | NPN |
| Maximum power dissipation(Abs) | 18 W | 18 W |
| surface mount | NO | NO |
| Terminal surface | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |