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BUV27AF

Description
Transistor,
CategoryDiscrete semiconductor    The transistor   
File Size145KB,6 Pages
ManufacturerPhilips Semiconductors (NXP Semiconductors N.V.)
Websitehttps://www.nxp.com/
Download Datasheet Parametric Compare View All

BUV27AF Overview

Transistor,

BUV27AF Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerPhilips Semiconductors (NXP Semiconductors N.V.)
package instruction,
Reach Compliance Codeunknown
Maximum collector current (IC)12 A
ConfigurationSingle
Minimum DC current gain (hFE)38
JESD-609 codee0
Maximum operating temperature150 °C
Polarity/channel typeNPN
Maximum power dissipation(Abs)18 W
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
This Material Copyrighted By Its Respective Manufacturer

BUV27AF Related Products

BUV27AF BUV27F
Description Transistor, Transistor,
Is it Rohs certified? incompatible incompatible
Maker Philips Semiconductors (NXP Semiconductors N.V.) Philips Semiconductors (NXP Semiconductors N.V.)
Reach Compliance Code unknown unknown
Maximum collector current (IC) 12 A 12 A
Configuration Single Single
Minimum DC current gain (hFE) 38 38
JESD-609 code e0 e0
Maximum operating temperature 150 °C 150 °C
Polarity/channel type NPN NPN
Maximum power dissipation(Abs) 18 W 18 W
surface mount NO NO
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)

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