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BUK444-600B

Description
TRANSISTOR 1.5 A, 600 V, 4.5 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power
CategoryDiscrete semiconductor    The transistor   
File Size47KB,1 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Download Datasheet Parametric View All

BUK444-600B Overview

TRANSISTOR 1.5 A, 600 V, 4.5 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power

BUK444-600B Parametric

Parameter NameAttribute value
MakerNXP
package instructionFLANGE MOUNT, R-PSFM-T3
Reach Compliance Codeunknown
Shell connectionISOLATED
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage600 V
Maximum drain current (ID)1.5 A
Maximum drain-source on-resistance4.5 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)55 pF
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeN-CHANNEL
Maximum power consumption environment25 W
Maximum pulsed drain current (IDM)6 A
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Maximum off time (toff)105 ns
Maximum opening time (tons)80 ns
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