BFY50-QR-B datasheet, PDF - EEWORLD Datasheet

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BFY50-QR-B: DescriptionSmall Signal Bipolar Transistor, 1A I(C), 35V V(BR)CEO, 1-Element, NPN, Silicon, TO-205AD, METAL CAN, TO-39, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size130KB，3 Pages; ManufacturerTT Electronics plc; Websitehttp://www.ttelectronics.com/; Environmental Compliance

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BFY50-QR-B Overview

Small Signal Bipolar Transistor, 1A I(C), 35V V(BR)CEO, 1-Element, NPN, Silicon, TO-205AD, METAL CAN, TO-39, 3 PIN

BFY50-QR-B Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	TT Electronics plc
package instruction	METAL CAN, TO-39, 3 PIN
Reach Compliance Code	compliant
ECCN code	EAR99
Maximum collector current (IC)	1 A
Collector-emitter maximum voltage	35 V
Configuration	SINGLE
Minimum DC current gain (hFE)	30
JEDEC-95 code	TO-205AD
JESD-30 code	O-MBCY-W3
Number of components	1
Number of terminals	3
Maximum operating temperature	200 °C
Package body material	METAL
Package shape	ROUND
Package form	CYLINDRICAL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	NPN
Certification status	Not Qualified
surface mount	NO
Terminal form	WIRE
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	100 MHz

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SILICON

NPN TRANSISTOR

BFY50

•

V(BR)CEO = 35V (Min).

Hermetic TO-39 Metal Package.

Ideally Suited General Purpose Amplifier Applications

Screening Options Available

•

ABSOLUTE MAXIMUM RATINGS

(TA = 25°C unless otherwise stated)

VCBO

VCEO

VEBO

Tstg

Collector – Base Voltage

Collector – Emitter Voltage

Emitter – Base Voltage

Continuous Collector Current

TA = 25°C

Total Power Dissipation at

Derate Above 25°C

TC = 25°C

Total Power Dissipation at

Derate Above 25°C

Junction Temperature Range

Storage Temperature Range

80V

35V

1.0A

0.8W

4.57mW/°C

28.6mW/°C

-65 to +200°C

THERMAL PROPERTIES

Symbols

θJA

θJC

Parameters

Thermal Resistance, Junction To Ambient

Thermal Resistance, Junction To Case

Max.

218.75

Units

°C/W

Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.

Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However

Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to

verify that datasheets are current before placing orders.

Semelab Limited

Coventry Road, Lutterworth, Leicestershire, LE17 4JB

Telephone +44 (0) 1455 556565

Fax +44 (0) 1455 552612

Email:

sales@semelab-tt.com

Document Number 3085

Issue 2

Page 1 of 3

Website:

http://www.semelab-tt.com

BFY50-QR-B Related Products

	BFY50-QR-B	BFY50-QR-BG4	BFY50.MODE4	BFY50.MOD
Description	Small Signal Bipolar Transistor, 1A I(C), 35V V(BR)CEO, 1-Element, NPN, Silicon, TO-205AD, METAL CAN, TO-39, 3 PIN	Small Signal Bipolar Transistor, 1A I(C), 35V V(BR)CEO, 1-Element, NPN, Silicon, TO-205AD, METAL CAN, TO-39, 3 PIN	Small Signal Bipolar Transistor, 1A I(C), 35V V(BR)CEO, 1-Element, NPN, Silicon, TO-205AD, METAL CAN, TO-39, 3 PIN	Small Signal Bipolar Transistor, 1A I(C), 35V V(BR)CEO, 1-Element, NPN, Silicon, TO-205AD, METAL CAN, TO-39, 3 PIN
Is it Rohs certified?	conform to	conform to	conform to	incompatible
package instruction	METAL CAN, TO-39, 3 PIN	CYLINDRICAL, O-MBCY-W3	CYLINDRICAL, O-MBCY-W3	CYLINDRICAL, O-MBCY-W3
Reach Compliance Code	compliant	compliant	compliant	compliant
ECCN code	EAR99	EAR99	EAR99	EAR99
Maximum collector current (IC)	1 A	1 A	1 A	1 A
Collector-emitter maximum voltage	35 V	35 V	35 V	35 V
Configuration	SINGLE	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	30	30	30	30
JEDEC-95 code	TO-205AD	TO-205AD	TO-205AD	TO-205AD
JESD-30 code	O-MBCY-W3	O-MBCY-W3	O-MBCY-W3	O-MBCY-W3
Number of components	1	1	1	1
Number of terminals	3	3	3	3
Maximum operating temperature	200 °C	200 °C	200 °C	200 °C
Package body material	METAL	METAL	METAL	METAL
Package shape	ROUND	ROUND	ROUND	ROUND
Package form	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	NPN	NPN	NPN	NPN
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO	NO
Terminal form	WIRE	WIRE	WIRE	WIRE
Terminal location	BOTTOM	BOTTOM	BOTTOM	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	100 MHz	100 MHz	100 MHz	100 MHz
Maker	TT Electronics plc	-	TT Electronics plc	TT Electronics plc

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