N Channel Enhancement Mode MOS Transistors
Product Summary
Part Number
TN2460L
TN2460T
Siliconix
TN2460L/TN2460T
V
(BR)DSS
Min (V)
240
r
DS(on)
Max (W)
60 @ V
GS
= 10 V
60 @ V
GS
= 10 V
V
GS(th)
(V)
0.5 to 1.8
0.5 to 1.8
I
D
Min
(mA)
75
51
Features
D
D
D
D
D
Low On Resistance: 40
W
Secondary Breakdown Free: 260 V
Low Power/Voltage Driven
Low Input and Output Leakage
Excellent Thermal Stability
Benefits
D
D
D
D
D
Low Offset Voltage
Full Voltage Operation
Easily Driven Without Buffer
Low Error Voltage
No High Temperature
Run Away"
Applications
D
High Voltage Drivers: Relays, Solenoids,
Lamps, Hammers, Displays, Transistors, etc.
D
Telephone Mute Switches, Ringer Circuits
D
Power Supply, Converters
D
Motor Control
TO 226AA
(TO 92)
S
G
D
1
TO 236
(SOT 23)
G
S
1
3
2
D
2
3
Top View
TN2460L
Top View
TN2460T (T2)*
*Marking Code for TO 236
Absolute Maximum Ratings (T
A
= 25_C Unless Otherwise Noted)
Parameter
Drain Source Voltage
Gate Source Voltage
Continuous Drain Current (T
J
= 150_C)
a
Pulsed Drain Current
Symbol
V
DS
V
GS
T
A
= 25_C
T
A
= 1 0 0
_C
T
A
= 25_C
T
A
= 100_C
I
D
I
DM
P
D
R
thJA
T
J
, T
stg
TN2460L
240
"20
75
48
800
0.8
0.32
156
-55 to 150
TN2460T
240
"20
51
32
400
0.36
0.14
350
Unit
V
mA
A
Power Dissipation
Maximum Junction to Ambient
Operating Junction and Storage Temperature Range
W
_C/W
_C
Notes
a. Pulse width limited by maximum junction temperature.
P-37409—Rev.
C (07/04/94)
1
TN2460L/TN2460T
Specifications
a
Limits
Parameter
Static
Drain Source Breakdown Voltage
Gate Threshold Voltage
Gate Body Leakage
V
(BR)DSS
V
GS(th)
I
GSS
I
DSS
I
D(on)
V
GS
= 0 V, I
D
= 10
mA
V
DS
= V
GS
, I
D
= 250
mA
V
DS
= 0 V, V
GS
=
"20
V
T
J
= 125_C
V
DS
= 120 V, V
GS
= 0 V
T
J
= 125_C
V
DS
= 10 V, V
GS
=10 V
V
DS
= 10 V, V
GS
= 4.5 V
V
GS
= 10 V, I
D
= 0.05 A
Drain Source O R i
D i S
On Resistance
c
Forward Transconductance
c
r
DS(on)
g
fs
V
GS
= 4.5 V, I
D
= 0.02 A
T
J
= 125_C
V
DS
= 10 V, I
D
= 0.05 A
30
75
20
140
130
38
40
75
70
"5
240
0.5
260
1.65
Siliconix
Symbol
Test Conditions
Min
Typ
b
Max
Unit
1.8
"10
V
nA
Zero Gate Voltage Drain Current
On State Drain Current
c
0.1
5
mA
mA
60
60
120
mS
W
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C
iss
C
oss
C
rss
V
DS
= 25 V, V
GS
= 0 V, f = 1 MH
V
V
MHz
14
4
1
30
15
10
pF
F
Switching
d
Turn On Time
Turn Off Time
t
ON
t
OFF
V
DD
= 25 V, R
L
= 500
W
I
D
^
0.05 A, V
GEN
= 10 V
R
G
= 25
W
8
20
20
35
ns
Notes
a. T
A
= 25_C unless otherwise noted.
b. For DESIGN AID ONLY, not subject to production testing.
c. Pulse test: PW
v80
ms
duty cycle
v1%.
d. Switching time is essentially independent of operating temperature.
VNDN24
2
P-37409—Rev.
C (07/04/94)
Siliconix
TN2460L/TN2460T
Output Characteristics
V
GS
= 10 V
100
Typical Characteristics (25_C Unless Otherwise Noted)
200
160
Transfer Characteristics
T
J
= -55_C
25_C
I
D
- Drain Current (mA)
4V
I
D
- Drain Current (mA)
80
125_C
60
120
80
3V
40
2V
0
0
4
8
12
16
20
40
20
V
DS
= 15 V
0
0
1
2
3
4
5
V
DS
- Drain to Source Voltage (V)
100
r
DS(on)
- On Resistance (
W
)
90
80
70
60
50
40
30
0
4
8
12
50 mA
10 mA
16
20
0
0
V
GS
- Gate Source Voltage (V)
125
On Resistance vs. Gate to Source Voltage
On Resistance vs. Drain Current
r
DS(on)
- On Resistance (
W
)
100
75
V
GS
= 10 V
50
I
D
= 100 mA
25
50
100
150
200
250
V
GS
- Gate Source Voltage (V)
2.25
r
DS(on)
- Drain Source On Resistance
(Normalized)
2.00
1.75
1.50
1.25
1.00
0.75
0.50
-50
-10
30
70
110
150
0.01
0.75
I
D
- Drain Current (A)
10
V
DS
= 5 V
I
D
- Drain Current (mA)
T
J
= 150_C
1
75_C
Normalized On Resistance
vs. Junction Temperature
V
GS
= 4.5 V
I
D
= 50 mA
Threshold Region
25_C
0.1
-55_C
1
1.25
1.5
1.75
2
2.25
2.5
T
J
- Junction Temperature (_C)
P-37409—Rev.
C (07/04/94)
V
GS
- Gate Source Voltage (V)
3
TN2460L/TN2460T
20
V
GS
= 0 V
16
C - Capacitance (pF)
C
iss
12
C
oss
Siliconix
Typical Characteristics (25_C Unless Otherwise Noted) (Cont'd)
Capacitance
V
GS
- Gate to Source Voltage (V)
15.0
R
L
= 6.2 kW
12.5
10.0
7.5
V
DS
= 100 V
5.0
2.5
0
192 V
Gate Charge
8
4
C
rss
0
0
10
20
30
40
50
0
50
100
150
200
250
300
V
DS
- Drain to Source Voltage (V)
100
50
t - Switching Time (ns)
Q
g
- Total Gate Charge (pC)
50
Load Condition Effects on Switching
V
DD
= 25 V
R
G
= 25
W
V
GS
= 0 to 10 V
Drive Resistance Effects on Switching
V
DD
= 25 V
R
L
= 500
W
V
GS
= 0 to 10 V
I
D
= 50 mA
t
f
20
10
5
t
d(off)
t
f
t - Switching Time (ns)
10
t
d(off)
t
r
2
1
t
d(on)
t
r
t
d(on)
2
1
10
20
50
100
10
20
R
G
- Gate Resistor (W)
50
I
D
- Drain Current (A)
1
Normalized Effective Transient
Thermal Impedance
Normalized Effective Transient Thermal Impedance, Junction to Ambient (TO 226AA)
Duty Cycle = 0.5
0.2
0.1
Notes:
P
DM
t
1
0.1
0.05
0.02
t
2
1. Duty Cycle, D =
0.01
Single Pulse
0.01
0.1
1
10
100
2. Per Unit Base = R
thJA
= 156
_
C/W
3. T
JM
- T
A
= P
DM
Z
thJA(t)
t
1
t
2
1K
10 K
t
1
- Square Wave Pulse Duration (sec)
4
P-37409—Rev.
C (07/04/94)
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