UNISONIC TECHNOLOGIES CO., LTD
UT60T03
30V, 45A N-CHANNEL
ENHANCEMENT MODE
DESCRIPTION
Power MOSFET
The
UT60T03
can provide excellent R
DS(ON)
and low gate
charge by using UTC’s advanced trench technology.
FEATURES
* Very simple drive requirement
* Very low gate charge
* Fast switching
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
1
G
G
G
G
G
S
2
D
D
D
D
D
S
Pin Assignment
3 4 5 6 7
S -
-
-
-
S -
-
-
-
S -
-
-
-
S -
-
-
-
S -
-
-
-
S G D D D
8
-
-
-
-
-
D
Packing
Tube
Tape Reel
Tape Reel
Tape Reel
Tube
Tape Reel
Ordering Number
Package
Lead Free
Halogen Free
UT60T03L-TF3-T
UT60T03G-TF3-T
TO-220F
UT60T03L-TF3-R
UT60T03G-TF3-R
TO-220F
UT60T03L-TN3-R
UT60T03G-TN3-R
TO-252
UT60T03L-TQ2-R
UT60T03G-TQ2-R
TO-263
UT60T03L-TQ2-T
UT60T03G-TQ2-T
TO-263
-
UT60T03G-K08-5060-R DFN-8(5×6)
Note: Pin Assignment: G: Gate
D: Drain
S: Source
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Copyright © 2015 Unisonic Technologies Co., Ltd
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QW-R502-183.D
UT60T03
MARKING
TO-220F / TO-252 / TO-262
DFN-8(5×6)
Power MOSFET
PIN CONFIGURATION
Source 1
Source 2
Source 3
Gate 4
Top View
8 Drain
7 Drain
6 Drain
5 Drain
Gate
Source
Source
Source
4
3
2
1
Bottom
View
5
6
7
8
Drain
Drain
Drain
Drain
DFN-8(5×6)
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QW-R502-183.D
UT60T03
ABSOLUTE MAXIMUM RATINGS
(T
J
=25°C, unless otherwise specified)
PARAMETER
SYMBOL
V
DSS
V
GSS
I
D
I
DM
Power MOSFET
RATINGS
UNIT
Drain-Source Voltage
30
V
Gate-Source Voltage
±20
V
Continuous Drain Current
45
A
Pulsed Drain Current (Note 2)
120
A
TO-220F
56
TO-252
44
Power Dissipation (T
C
=25°C)
P
D
W
TO-263
54
DFN-8(5×6)
21
Junction Temperature
T
J
+150
°C
Strong Temperature
T
STG
-55 ~ +175
°C
Note:1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2 .Pulse width limited by safe operating area.
THERMAL DATA
PARAMETER
SYMBOL
TO-220F
TO-252
TO-263
DFN-8(5×6)
TO-220F
TO-252
TO-263
DFN-8(5×6)
θ
JA
RATINGS
62.5
110
62
46
2.66
3.4
1.24
6
UNIT
°C/W
Junction to Ambient
Junction to Case
θ
JC
°C/W
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www.unisonic.com.tw
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QW-R502-183.D
UT60T03
ELECTRICAL CHARACTERISTICS
(T
J
=25°C, unless otherwise noted)
TEST CONDITIONS
V
GS
=0 V, I
D
=250µA
V
DS
=30V, V
GS
=0V
V
GS
=±20 V
Reference to 25°C, I
D
=1mA
V
DS
=V
GS
, I
D
=250µA
V
GS
=10V, I
D
=20A
V
GS
=4.5V, I
D
=15A
PARAMETER
SYMBOL
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
Drain-Source Leakage Current
I
DSS
Gate-Body Leakage Current
I
GSS
Breakdown Voltage Temperature Coefficient
∆BV
DSS
/∆T
J
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
Static Drain-Source On-Resistance(Note 1)
R
DS(ON)
Power MOSFET
MIN
30
TYP MAX UNIT
V
1
µA
±100 nA
V/°C
0.026
3
12
25
1135
200
135
11.6
3.9
7
8.8
57.5
18.5
6.4
1.3
23.3
16
V
mΩ
1
DYNAMIC PARAMETERS
Input Capacitance
C
ISS
V
DS
=25V, V
GS
=0V,
Output Capacitance
C
OSS
f=1.0MHz
Reverse Transfer Capacitance
C
RSS
SWITCHING PARAMETERS
Total Gate Charge
Q
G
V
DS
=20V, V
GS
=4.5V,
Gate Source Charge
Q
GS
I
D
=20A (Note 1)
Gate Drain Charge
Q
GD
Turn-ON Delay Time
t
D(ON)
V
GS
=10V, V
DS
=15V,
Turn-ON Rise Time
t
R
R
D
=0.75Ω, I
D
=20A,
Turn-OFF Delay Time
t
D(OFF)
R
G
=3.3Ω (Note 1)
Turn-OFF Fall-Time
t
F
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Forward On Voltage (Note 1)
V
SD
I
S
=45A, V
GS
=0V
Reverse Recovery Time
t
RR
I
S
=20A, V
GS
=0V,
dI/dt=100A/μs
Reverse Recovery Charge
Q
RR
Note: 1.Pulse width
≤
300us , duty cycle
≤
2%.
2. Essentially independent of operating temperature
pF
nC
ns
V
ns
nC
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QW-R502-183.D
UT60T03
TYPICAL CHARACTERISTICS
125
100
Drain Current,I
D
(A)
75
50
25
0
0
1
2
3
Drain to Source Voltage,V
DS
(V)
4
0
0
Typical Output Characteristics
T
C
=25℃
10V
8.0V
Drain Current,I
D
(A)
60
90
Power MOSFET
Typical Output Characteristics
T
C
=150℃
10V
8.0V
6.0V
6.0V
5.0V
5.0V
30
V
G
=4.0V
1
2
3
4
Drain to Source Voltage,V
DS
(V)
Normalized On-Resistance vs.
Junction Temperature
I
D
=20A
V
G
=10V
5
80
On-Resistance,R
DS(ON)
(mΩ)
On-Resistance vs. Gate Voltage
I
D
=20A
T
C
=25℃
Normalized, R
DS(ON)
2
60
1.6
40
1.2
20
0.8
0
3
5
9
7
Gate-to-Source Voltage,V
GS
(V)
11
0.4
-50
25
100
Junction Temperature,T
J
(℃)
175
UNISONIC TECHNOLOGIES CO., LTD
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Gate Threshold Voltage,V
GS(th)
(V)
Reverse Drain Current, I
S
(A)
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QW-R502-183.D
Embedded System
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