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5N80_15

Description
N-CHANNEL JFET CAPACITOR MICROPHONE APPLICATIONS
File Size259KB,7 Pages
ManufacturerUNISONIC TECHNOLOGIES CO.,LTD
Websitehttp://www.unisonic.com.tw/
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5N80_15 Overview

N-CHANNEL JFET CAPACITOR MICROPHONE APPLICATIONS

UNISONIC TECHNOLOGIES CO., LTD
5N80
5A, 800V N-CHANNEL
POWER MOSFET
DESCRIPTION
Power MOSFET
The UTC
5N80
is a N-channel enhancement mode power
MOSFET. It use UTC advanced technology to provide avalanche
rugged technology and low gate charge.
It can be applied in high current, high speed switching, switch
mode power supplies (SMPS), consumer and industrial lighting,
DC-AC inverters for welding equipment and uninterruptible power
supply(UPS).
FEATURES
* R
DS(ON)
: 2.0Ω (TYP.)
* Avalanche rugged technology
* Low input capacitance
* Low gate charge
* Application oriented characterization
SYMBOL
ORDERING INFORMATION
1
G
G
G
Pin Assignment
2
D
D
D
3
S
S
S
Packing
Tube
Tube
Tube
Ordering Number
Package
Lead Free
Halogen Free
5N80L-TA3-T
5N80G-TA3-T
TO-220
5N80L-TF1-T
5N80G-TF1-T
TO-220F1
5N80L-TF3-T
5N80G-TF3-T
TO-220F
Note: Pin Assignment: G: Gate D: Drain S: Source
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., Ltd
1 of 7
QW-R502-483.E

5N80_15 Related Products

5N80_15 5N80G-TF1-T 5N80L-TF1-T
Description N-CHANNEL JFET CAPACITOR MICROPHONE APPLICATIONS 5A, 800V N-CHANNEL POWER MOSFET N-CHANNEL JFET CAPACITOR MICROPHONE APPLICATIONS
Is it Rohs certified? - conform to conform to
Maker - UNISONIC TECHNOLOGIES CO.,LTD UNISONIC TECHNOLOGIES CO.,LTD
Parts packaging code - TO-220AB TO-220AB
package instruction - FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3
Contacts - 3 3
Reach Compliance Code - compli compli
Avalanche Energy Efficiency Rating (Eas) - 320 mJ 320 mJ
Shell connection - ISOLATED ISOLATED
Configuration - SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage - 800 V 800 V
Maximum drain current (Abs) (ID) - 5.5 A 5.5 A
Maximum drain current (ID) - 5.5 A 5.5 A
Maximum drain-source on-resistance - 2.5 Ω 2.5 Ω
FET technology - METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code - TO-220AB TO-220AB
JESD-30 code - R-PSFM-T3 R-PSFM-T3
Number of components - 1 1
Number of terminals - 3 3
Operating mode - ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature - 150 °C 150 °C
Package body material - PLASTIC/EPOXY PLASTIC/EPOXY
Package shape - RECTANGULAR RECTANGULAR
Package form - FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Celsius) - NOT SPECIFIED NOT SPECIFIED
Polarity/channel type - N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) - 40 W 40 W
Maximum pulsed drain current (IDM) - 20 A 20 A
surface mount - NO NO
Terminal form - THROUGH-HOLE THROUGH-HOLE
Terminal location - SINGLE SINGLE
Maximum time at peak reflow temperature - NOT SPECIFIED NOT SPECIFIED
transistor applications - SWITCHING SWITCHING
Transistor component materials - SILICON SILICON
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