This product has been retired and is not recommended for designs. Please contact a Spansion representative for alternates.
Availability of this document is retained for reference and historical purposes only.
The following document contains information on Spansion memory products.
Continuity of Specifications
There is no change to this data sheet as a result of offering the device as a Spansion product. Any changes that have been
made are the result of normal data sheet improvement and are noted in the document revision summary.
For More Information
Please contact your local sales office for additional information about Spansion memory solutions.
Publication Number
21521
Revision
D
Amendment
7
Issue Date
February 24, 2009
Da ta
Shee t
(Retire d
Pro duct)
This page left intentionally blank.
2
Am29LV200B
21521_D7 February 24, 2009
DATA SHEET
Am29LV200B
2 Megabit (256 K x 8-Bit/128 K x 16-Bit)
CMOS 3.0 Volt-only Boot Sector Flash Memory
This product has been retired and is not recommended for designs. Please contact a Spansion representative for alternates. Availability of this document is retained for reference and
historical purposes only.
DISTINCTIVE CHARACTERISTICS
■
Single power supply operation
— 2.7 to 3.6 volt read and write operations for
battery-powered applications
■
Manufactured on 0.32 µm process technology
— Compatible with 0.5 µm Am29LV200 device
■
High performance
— Full voltage range: access times as fast as 70 ns
— Regulated voltage range: access times as fast as
55 ns
■
Ultra low power consumption (typical values at
5 MHz)
— 200 nA Automatic Sleep mode current
— 200 nA standby mode current
— 7 mA read current
— 15 mA program/erase current
■
Flexible sector architecture
— One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and
three 64 Kbyte sectors (byte mode)
— One 8 Kword, two 4 Kword, one 16 Kword, and
three 32 Kword sectors (word mode)
— Supports full chip erase
— Sector Protection features:
A hardware method of locking a sector to prevent
any program or erase operations within that sector
Sectors can be locked in-system or via
programming equipment
Temporary Sector Unprotect feature allows code
changes in previously locked sectors
■
Unlock Bypass Program Command
— Reduces overall programming time when issuing
multiple program command sequences
■
Top or bottom boot block configurations
available
■
Embedded Algorithms
— Embedded Erase algorithm automatically
preprograms and erases the entire chip or any
combination of designated sectors
— Embedded Program algorithm automatically
writes and verifies data at specified addresses
■
Minimum 1 million erase cycle guarantee per
sector
■
20-year data retention at 125°C
— Reliable operation for the life of the system
■
Package option
— 48-pin TSOP
— 44-pin SO
— 48-ball FBGA
■
Compatibility with JEDEC standards
— Pinout and software compatible with single-
power supply Flash
— Superior inadvertent write protection
■
Data# Polling and toggle bits
— Provides a software method of detecting program
or erase operation completion
■
Ready/Busy# pin (RY/BY#)
— Provides a hardware method of detecting
program or erase cycle completion
■
Erase Suspend/Erase Resume
— Suspends an erase operation to read data from,
or program data to, a sector that is not being
erased, then resumes the erase operation
■
Hardware reset pin (RESET#)
— Hardware method to reset the device to reading
array data
This Data Sheet states AMD’s current technical specifications regarding the Products described herein. This Data
Sheet may be revised by subsequent versions or modifications due to changes in technical specifications.
Publication#
21521
Rev:
D
Amendment:
7
Issue Date:
February 24, 2009
DATA SHEET
GENERAL DESCRIPTION
The Am29LV200B is a 2 Mbit, 3.0 volt-only Flash
memory organized as 262,144 bytes or 131,072 words.
The device is offered in 44-pin SO, 48-pin TSOP, and 48-
ball FBGA packages. The word-wide data (x16) appears
on DQ15-DQ0; the byte-wide (x8) data appears on
DQ7-DQ0. This device is designed to be programmed
in-system using only a single 3.0 volt V
CC
supply. No
V
PP
is required for write or erase operations. The device
can also be programmed in standard EPROM
programmers.
This device is manufactured using AMD’s 0.32 µm
process technology, and offers all the features and ben-
efits of the Am29LV200, which was manufactured using
0 . 5 µ m p r o c e s s t e c h n o l o gy. I n a d d i t i o n , t h e
Am29LV200B features unlock bypass programming
and in-system sector protection/unprotection.
The standard device offers access times of 55, 70, 90
and 120 ns, allowing high speed microprocessors to
operate without wait states. To eliminate bus contention
the device has separate chip enable (CE#), write
enable (WE#) and output enable (OE#) controls.
The device requires only a
single 3.0 volt power
supply
for both read and write functions. Internally
generated and regulated voltages are provided for the
program and erase operations.
The device is entirely command set compatible with the
JEDEC single-power-supply Flash standard.
Com-
mands are written to the command register using
standard microprocessor write timings. Register con-
tents serve as input to an internal state-machine that
controls the erase and programming circuitry. Write
cycles also internally latch addresses and data needed
for the programming and erase operations. Reading
data out of the device is similar to reading from other
Flash or EPROM devices.
Device programming occurs by executing the program
command sequence. This initiates the
Embedded
Program
algorithm—an internal algorithm that auto-
matically times the program pulse widths and verifies
proper cell margin. The
Unlock Bypass
mode facili-
tates faster programming times by requiring only two
write cycles to program data instead of four.
Device erasure occurs by executing the erase
command sequence. This initiates the
Embedded
Erase
algorithm—an internal algorithm that automatically
preprograms the array (if it is not already programmed)
before executing the erase operation. During erase, the
device automatically times the erase pulse widths and
verifies proper cell margin.
The host system can detect whether a program or
erase operation is complete by observing the RY/BY#
pin, or by reading the DQ7 (Data# Polling) and DQ6
(toggle)
status bits.
After a program or erase cycle has
been completed, the device is ready to read array data
or accept another command.
The
sector erase architecture
allows memory sectors
to be erased and reprogrammed without affecting the
data contents of other sectors. The device is fully
erased when shipped from the factory.
Hardware data protection
measures include a low
V
CC
detector that automatically inhibits write opera-
tions during power transitions. The
hardware sector
protection
feature disables both program and erase
operations in any combination of the sectors of
memory. This can be achieved in-system or via pro-
gramming equipment.
The
Erase Suspend
feature enables the user to put
erase on hold for any period of time to read data from,
or program data to, any sector that is not selected for
erasure. True background erase can thus be achieved.
The
hardware RESET# pin
terminates any operation
in progress and resets the internal state machine to
reading array data. The RESET# pin may be tied to the
system reset circuitry. A system reset would thus also
reset the device, enabling the system microprocessor
to read the boot-up firmware from the Flash memory.
The device offers two power-saving features. When
addresses have been stable for a specified amount of
time, the device enters the
automatic sleep mode.
The system can also place the device into the
standby
mode.
Power consumption is greatly reduced in both
these modes.
AMD’s Flash technology combines years of Flash
memory manufacturing experience to produce the
highest levels of quality, reliability and cost effective-
ness. The device electrically erases all bits within a
sector simultaneously via Fowler-Nordheim tunneling.
The data is programmed using hot electron injection.
Background: The BlueNRG series has a hardware RTC, but unfortunately, this part is turned off when sleeping. If used at this time, it will cause inaccurate time. But in many cases, we need the timing ...
[color=rgb(68,68,68)][backcolor=rgb(255,255,255)]I have a question. Can someone please help me answer it? My wince has already installed the iic driver. So do I need to write a separate driver to conn...
When using serial communication, after using AT+CIPSEND, it returns >, and then when using AT+CIPCLOSE to close, the command sent is sent as a message. Can anyone help me?...
[i=s] This post was last edited by Firefly on 2017-6-8 10:07 [/i] May I ask: For the calculation formula of capacitor reactance: [font="]Xc [/font][color=#404040][font="][size=10.0pt]= [/size][/font][...
[i=s]This post was last edited by jameswangsynnex on 2015-3-3 19:58[/i]A novel dimming desk lamp controller, which changes the incandescent lamp in a step-by-step cycle of "strong light-medium light, ...
On August 24th, Jin Yuzhi, CEO of Huawei's Intelligent Automotive Solutions BU, announced the first automotive application of Huawei Qiankun's unique Limera technology. This technology eliminates t...[Details]
Most of the houses we live in now are elevator buildings, mainly because it is more convenient to go up and down the stairs! It can also make life more comfortable. It even helps to increase the ad...[Details]
When we travel in cities, we all find that electric vehicles have many advantages. As a means of transportation, they can also fulfill their mission well. Now, more and more residential communities...[Details]
Limited vocabulary recognition
According to the number of characters, words or short sentences in the vocabulary, it can be roughly divided into: less than 100 is small vocabulary; 100-1000 is...[Details]
Common Mode Semiconductor has officially released its latest generation of power management ICs—the GM6506 series. This fully integrated high-frequency synchronous rectification step-down p...[Details]
On August 22, according to the Ministry of Industry and Information Technology's official website, my country's first mandatory national standard for the control of hazardous substances in electric...[Details]
With the rapid development of electric vehicles in my country, people are beginning to pay attention to the issue of radiation from electric vehicles. We all know that mobile phones emit radiation,...[Details]
Tires are a very important component for cars. They are related to the driving experience of the vehicle. We are almost inseparable from cars in our daily lives. For tires, according to the role of...[Details]
Learned the following information.
Customer product: industrial computer motherboard
Glue application area: CPU/BGA filling
Glue color requirements: black or t...[Details]
According to Nikkei, a survey found that global electric vehicle battery supply is expected to reach more than three times the required quantity due to
cooling
demand for electric vehicles,...[Details]
Tiantai Robot's official Weibo account announced on the evening of August 20 that Tiantai Robot Co., Ltd., together with strategic partners including Shandong Future Robot Technology Co., Ltd., Sha...[Details]
As the range of electric vehicles continues to increase, driving electric vehicles for long-distance travel has become a trend. For high-speed travel, how much impact will high-speed driving of ele...[Details]
High-definition media consumption is experiencing a dual growth: an increase in the number of consumers and a transition to higher-definition content. This growth is driven by increasingly widespre...[Details]
introduction
In today's busy society, people experience chronic high stress, which in turn poses a significant threat to our health. Therefore, effectively relieving stress has become a pr...[Details]
AI distributed rendering architecture improves mobile phone rendering capabilities, and game performance tests can check frame generation indicators in real time
Shanghai, China, Aug...[Details]