UNISONIC TECHNOLOGIES CO., LTD
UT2352
-30V, -1.3A P-CHANNEL
ENHANCEMENT MODE
DESCRIPTION
Power MOSFET
As P-Channel Logic Level MOSFET,
UT2352
has been
optimized for battery power management applications. And it’s
produced using UTC’s advanced Power Trench process.
SYMBOL
ORDERING INFORMATION
Ordering Number
UT2352G-AE3-R
UT2352G-K08-3030-R
Pin Assignment: G: Gate
D: Drain
Package
SOT-23
DFN-8(3×3)
S: Source
1
S
S
2
G
S
Pin Assignment
3
4
5
6
D
-
-
-
S
G
D
D
7
-
D
8
-
D
acking
Tape Reel
Tape Reel
Note:
MARKING
SOT-23
BCBG
DFN-8(3×3)
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UT2352
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C, unless otherwise specified)
SYMBOL
V
DSS
V
GSS
I
D
I
DM
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Power MOSFET
RATING
UNIT
-30
V
±25
V
-1.3
A
-10
A
SOT-23
0.46
W
Power Dissipation (Note 3)
P
D
DFN-8(3×3)
2.4
W
Junction Temperature
T
J
+150
°C
Storage Temperature
T
STG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL RESISTANCES CHARACTERISTICS
PARAMETER
SYMBOL
SOT-23
DFN-8(3×3)
SOT-23
DFN-8(3×3)
θ
JA
θ
JC
RATING
250
52
75
3
TYP
UNIT
°C/W
°C/W
°C/W
°C/W
MAX UNIT
V
uA
nA
mV/°C
-2.5
180
300
V
mΩ
mΩ
pF
pF
pF
1.9
nC
nC
nC
ns
ns
ns
ns
V
A
ns
nC
Junction-to-Ambient (Note 3)
Junction-to-Case
ELECTRICAL CHARACTERISTICS
(T
A
=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
V
GS
=0V, I
D
=-250uA
-30
Drain-Source Leakage Current
I
DSS
V
DS
=-24V, V
GS
=0V
Gate-Source Leakage Current
I
GSS
V
GS
=±25V, V
DS
=0V
Breakdown Voltage Temperature
∆BV
DSS
/∆T
J
Reference to 25℃, I
D
=-250uA
Coefficient
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
V
DS
=V
GS
, I
D
=-250uA
-0.8
Drain-Source On-State Resistance
V
GS
=-10V, I
D
=-1.3A
R
DS(ON)
(Note 2)
V
GS
=-4.5V, I
D
=-1.1A
DYNAMIC CHARACTERISTICS
Input Capacitance
C
ISS
V
GS
=0V, V
DS
=-15V, f=1MHz
Output Capacitance
C
OSS
Reverse Transfer Capacitance
C
RSS
SWITCHING CHARACTERISTICS
Total Gate Charge
Q
G
V
DS
=-10V, V
GS
=-4.5V,
Gate-Source Charge
Q
GS
I
D
=-0.9A
Gate-Drain Charge
Q
GD
Turn-ON Delay Time (Note 2)
t
D(ON)
V
DD
=-10V, V
GS
=-10V, I
D
=-1A,
Turn-ON Rise Time
t
R
R
G
=6Ω
Turn-OFF Delay Time
t
D(OFF)
Turn-OFF Fall Time
t
F
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward
V
SD
V
GS
=0V, I
S
=-0.42 A
Voltage(Note2)
Maximum Continuous Drain Source Diode
I
S
Forward Current
Reverse Recovery Time
t
RR
I
F
= -3.9 A, dI
F
/dt = 100 A/μs
Reverse Recovery Charge
Q
RR
Notes: 1. Pulse width limited by T
J(MAX)
2. Pulse width
≤300us,
duty cycle
≤2%.
3. Surface mounted on 0.001 in
2
pad of 2oz. copper; 270℃/W when mounted on min.
-1
±100
-17
-2.0
150
250
150
40
20
1.4
0.5
0.5
4
15
10
1
-0.8
8
28
18
2
-1.2
-0.42
17
7
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UT2352
Power MOSFET
TYPICAL CHARACTERISTICS
On-Resistance,R
DS(ON)
(OHM)
Capaciyance (pF)
Normalized Drain-Source On-
Resistance,R
DS(ON)
Transfer Characteristics
10
Reverse Drain Current,-I
S
(A)
V
DS
=-5V
8
T
A
=-55℃
125℃
6
25℃
4
2
0
1
100
10
1
0.1
0.01
0.001
0.0001
0.0
T
A
=125℃
25℃
-55℃
Body Diode Forward Voltage Variation with
Source Current and Temperature
V
GS
=0V
4
2
3
5
6
7
Gate to Source Voltage,-V
GS
(V)
Drain Current,-I
D
(A)
Drain Current,-I
D
(A)
8
0.2 0.4 0.6 0.8 1.0 1.2 1.4
Body Diode Forward Voltage,-V
SD
(V)
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UT2352
10
I
D
=-0.9A
Gate-Source Voltage,-V
GS
(V)
8
6
4
2
0
0
0.5
1
1.5
2
2.5
3
Gate Charge,Q
G
(nC)
50
Peak Transient Power,P(pk) (W)
40
30
20
10
0
0.0001 0.001 0.01 0.1
1
Time,t (sec)
10
100 1000
Single Pulse Maximum Power Dissipation
Single Pulse
R
θJA
=270 /W
T
A
=25
Drain Current,-I
D
(A)
Power MOSFET
TYPICAL CHARACTERISTICS (Cont.)
Gate Charge Characteristics
1.4
Normalized Drain-Source On-
Resistance R
DS(ON)
I
D
=-0.9A
V
GS
=-10V
1.2
On-Resistance Variation with Temperature
V
DS
=-10V
-20V
-15V
1
0.8
0.6
-50 -25
0
25
50
75 100 125 150
Junction Temperature,T
J
(℃)
100
Maximum Safe Operating Area
10
R
DS(ON)
Limit
1ms
100μs
1
100ms
10s
DC
10ms
1s
0.1
0.01
0.1
V
GS
=-10V
Single Pulse
R
θJA
=270 /W
T
A
=25
1
10
Drain-Source Voltage,-V
DS
(V)
100
Normalized Effective Transient
Thermal Resistance,r (t)
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UT2352
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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